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    Abstract: IXGH32N60B
    Text: Preliminary Data Sheet HiPerFAST IGBT IXGH32N60B IXGH32N60BS VCES ^C25 VCE sat t, Symbol Test Conditions V OES Td = 25°C to 150°C 600 V v CGR Td = 25°C to 150°C; RGE = 1 MO 600 V VGES Continuous ±20 V V OEM Transient ±30 V 60 A ^C90 Tc = 25°C Tc = 90°C


    OCR Scan     		PDF IXGH32N60B IXGH32N60BS T0-247 32N60BS) 1xgh32

    32N60B

    Abstract: 32N60BU1 IXGH32N60B
    Text: □IX Y S j Prelim inary Data Sheet HiPerFAST IGBT IXGH32N60B IXGH32N60BS VCES ^C25 V CE sat tfi < Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 Mi2 600 V v* GES v GEM Continuous ±20 V T ransient ±30 V Maximum Ratings


    OCR Scan     		PDF IXGH32N60B IXGH32N60BS 13/IONm/lb O-247 4bflb22b 32N60B 32N60BU1