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    IXGH32N60AU1S Search Results

    IXGH32N60AU1S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGH32N60AU1S IXYS HiPerFAST IGBT with Diode Combi Pack Original PDF

    IXGH32N60AU1S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd diode 819

    Abstract: No abstract text available
    Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S CES C25 v CE sat t Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 V vt cgr Tj = 25°C to 150°C; RGE = 1 M n 600 V Maximum Ratings v GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25“C


    OCR Scan     		PDF IXGH32N60AU1 IXGH32N60AU1S O-247 32N60AU1S) IXGH32N60AU1 IXQH32N60AU1S XGH32N60AU1 smd diode 819

    30n50 mosfet

    Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel
    Text: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600


    OCR Scan     		PDF O-263 O-263AA O-247 IXGA10N60A IXGA24N60A IXGH32N60B IXGH50N60AS IXGA10N60U1 30n50 mosfet DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel

    IXGH32N60AU1

    Abstract: No abstract text available
    Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S vCES ^C25 v CE sat Combi Pack t Symbol Test C onditions V yces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RQE= 1 MQ 600 V VGES Continuous ±20 V V GEM Transient ±30 V ^C25 Tc = 25°C ^C90


    OCR Scan     		PDF 32N60AU1 32N60AU1S 4b6b22b IXGH32N60AU1 IXGH32N60AU1S 4bflb22b 0003bQb IXGH32N60AU1