c2548
Abstract: IXGH24N50BU1 IXGH24N60BU1
Text: HiPerFASTTM IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 Combi Pack VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD 24N50 24N60 VCES TJ = 25°C to 150°C 500 VCGR TJ = 25°C to 150°C; RGE = 1 MW
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Original
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IXGH24N50BU1
IXGH24N60BU1
24N50
24N60
O-247
tempera10
IXGH24N50BU1
c2548
IXGH24N60BU1
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PDF
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W2515
Abstract: IXGH24N50BU1 IXGH24N60BU1
Text: HiPerFASTTM IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 Combi Pack VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD 24N50 24N60 VCES TJ = 25°C to 150°C 500 VCGR TJ = 25°C to 150°C; RGE = 1 MW
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Original
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IXGH24N50BU1
IXGH24N60BU1
24N50
24N60
O-247
tempera000
IXGH24N50BU1
W2515
IXGH24N60BU1
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PDF
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50n50c
Abstract: 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60
Text: Preliminary data HiPerFASTTM IGBT VCES IXGH 50N50B IXGH 50N60B IC25 VCE sat 500 V 75 A 600 V 75 A tfi 2.3 V 100 ns 2.5 V 120 ns TO-247 AD C (TAB) Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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Original
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50N50B
50N60B
O-247
50N50
50N60
IXGH24N50BU1
IXGH24N60BU1
50n50c
50N60
IXGH20N60AU1
10N60A
IXGH20N60U1
G 50N60
G20N60
sot-227 footprint
A48A
24N60
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PDF
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diode DSDI 9
Abstract: 10N60A IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A
Text: □IXYS Contents Insulated Gate Bipolar Transistors IGBT Package style CE(aat) Type Page Tc = 25°C V 1. TO-247 AD 2. TO-220 AB 3. TO-264 AA 500 48 2.3 IXGH24N50B IXGH24N50BU1 4-5 6-7 500 75 2.3 IXGH50N50B 8-9 600 20 3.0 IXSH 10N60A 10-11 600 48 2.5 IXGH24N60B
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OCR Scan
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O-247
O-220
O-264
IXGH24N50B
IXGH24N50BU1
IXGH50N50B
10N60A
IXGH24N60B
IXGH24N60BU1
IXGH50N60B
diode DSDI 9
IXLN35N120AU1
diode DSDI 12
IXLH35N120A
DSP8-12A
a1931
DSP8-08AS
95-06DA
IXln35N120A
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PDF
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6G E 2080 diode
Abstract: IXGH24N50BU1 IXGH24N60BU1 24n60
Text: v CES HiPerFAST IGBT with Diode Symbol IXGH24N50BU1/S IXGH24N60BU1/S Maximum Ratings Test Conditions 24N50 Tj = 25“C to 150°C 500 600 V vCGfl vGES vGEM Tj = 25°C to 150°C; RaE = 1 MQ 500 600 V Continuous ±20 V Transient ±30 V ^C25 *C90 ^CM T c = 25°C
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OCR Scan
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IXGH24N50BU1/S
IXGH24N60BU1/S
24N50
24N60
O-247
24NS0BU1
IXGH24W6SU1
24N50BU1
24N60BU1
6G E 2080 diode
IXGH24N50BU1
IXGH24N60BU1
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PDF
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.24n50
Abstract: xgh2 IXGH24N50BU1 IXGH24N60BU1
Text: Preliminary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES *C 25 VCE(sat) t. 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack T0-247 SMD (24N*BU1 S) Symbol TestConditions I C (TAB) Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C
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OCR Scan
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IXGH24N50BU1
IXGH24N60BU1
T0-247
24N50
24N60
.24n50
xgh2
IXGH24N60BU1
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PDF
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IXGH24N60BU1
Abstract: 24N50 HIPERFAST IGBT WITH DIODE 24N60 IXGH24N50BU1
Text: DIXYS Prelim inary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES ^C 25 V CE(sat) t,i 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack TO-247 SMD (24N*BU1S) U Symbol Test Conditions 24N50 24N60 V CES ^ = 25 °C to 150°C 500 600
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OCR Scan
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IXGH24N50BU1
IXGH24N60BU1
24N50
24N60
24N50
HIPERFAST IGBT WITH DIODE
24N60
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