IXGH22N50B
Abstract: IXGH22N50BS
Text: Preliminary data IXGH22N50B IXGH22N50BS HiP erF ASTTM IGBT HiPerF erFAST VCES IC 25 VCE(sat)typ tfi(typ) = 500 V = 44 A = 2.1 V = 55 ns TO-247 SMD* Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 500 500 V V VGES VGEM
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IXGH22N50B
IXGH22N50BS
O-247
IXGH22N50B
IXGH22N50BS
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smd A1 t
Abstract: No abstract text available
Text: □ IXYS Preliminary data IXGH22N50B IXGH22N50BS HiPerFAST IGBT V CES 500 V 44 A 2.1 V 55 ns ^C 25 V C E(sat)typ ^fi(typ) TO-247 SMD* Symbol Test Conditions v v*C G R T j = 25°C to 150°C T j = 25°C to 150°C; RGE = 1 M£i 500 500 V V v v*G E M Continuous
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IXGH22N50B
IXGH22N50BS
O-247
smd A1 t
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Untitled
Abstract: No abstract text available
Text: Preli mi nary data IXGH22N50B IXGH22N50BS HiPerFAST IGBT 500 V 44 A 2.1 V 55 ns v,E! 'e m CE sat typ ^fl(typ) TO-247SMD* Symbol Test Conditions VCES vCGR ^ = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 Mi2 500 500 V V VGES vGEM Continuous Transient ±20
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IXGH22N50B
IXGH22N50BS
O-247SMD*
T0-247
O-247
Emi11er
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Untitled
Abstract: No abstract text available
Text: OIXYS HiPerFAST IGBT IXGH22N50B IXGH22N50BS v CES ^C 25 ^ C E ( s a t ) ty p ^fi(typ) 500 V 44 A 2.1 V 55 ns Preliminary data Sym bol Test Conditions V V ¥ CGR Tj = 25°C to 150°C T j = 25°C to 150°C; RGE = 1 M f i 500 5 00 V V v v’ C o n tin uous
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IXGH22N50B
IXGH22N50BS
O-247
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