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    IXYS Corporation IXFX32N100P

    MOSFETs 32 Amps 1000V 0.32 Rds
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    Mouser Electronics IXFX32N100P
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    Future Electronics IXFX32N100P Tube 26 Weeks 300
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    TTI IXFX32N100P Tube 300
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    TME IXFX32N100P 1
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    Littelfuse Inc IXFX32N100P

    Discmosfetn-Ch Hiperfet-Polar To-247Ad/ Tube |Littelfuse IXFX32N100P
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    Newark IXFX32N100P Bulk 300
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    IXFX32N100P Datasheets (1)

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    IXFX32N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 32A PLUS247 Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFK32N100P IXFX32N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFK32N100P IXFX32N100P 300ns 32N100P 8-24-07-B PDF

    IXFX32N100P

    Abstract: ixfk32n100p PLUS247
    Text: PolarTM Power MOSFET HiPerFETTM IXFK32N100P IXFX32N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1000 1000 V


    Original     		IXFK32N100P IXFX32N100P 300ns O-264 32N100P 3-28-08-C IXFX32N100P ixfk32n100p PLUS247 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM IXFK32N100P IXFX32N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1000 1000 V V VGSS VGSM Continuous


    Original     		IXFK32N100P IXFX32N100P 300ns 32N100P 3-28-08-C PDF