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    IXYS Corporation IXFV110N25TS

    MOSFET N-CH 110A PLUS220
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    IXFV110N25T

    Abstract: IXFV110N25TS PLUS220SMD
    Text: Preliminary Technical Information IXFV110N25T IXFV110N25TS Trench Gate Power HiperFET VDSS ID25 = 250V = 110A Ω ≤ 24mΩ RDS on N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250


    Original     		PDF IXFV110N25T IXFV110N25TS PLUS220 110N25T 8-11-08-A IXFV110N25T IXFV110N25TS PLUS220SMD

    Untitled

    Abstract: No abstract text available
    Text: TrenchTM HiPerFETTM Power MOSFETs VDSS ID25 IXFV110N25T IXFV110N25TS RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 250V = 110A ≤ 24mΩ Ω PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250


    Original     		PDF IXFV110N25T IXFV110N25TS PLUS220 PLUS220SMD. 110N25T 5-14-12-B

    Untitled

    Abstract: No abstract text available
    Text: IXFV110N25T IXFV110N25TS TrenchTM HiPerFETTM Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 250V = 110A ≤ 24mΩ Ω PLUS220 (IXFV) Symbol Test Conditions VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFV110N25T IXFV110N25TS PLUS220 PLUS220SMD 110N25T 5-14-12-B