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    IXYS Corporation IXFQ12N80P

    MOSFET N-CH 800V 12A TO3P
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    IXFQ12N80P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXFQ12N80P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 12A TO-3P Original PDF

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    IXFV12N80P

    Abstract: plus220smd IXFQ12N80P IXFH12N80P 6V84
    Text: PolarHVTM HiPerFET Power MOSFET IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS = 800 V = 12 A ≤ 0.85 Ω ≤ 250 ns VDSS ID25 RDS on trr N-Channel Enhancement Mode TO-247 (IXFH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS O-247 IXFH12N80P IXFV12N80P PLUS220 plus220smd IXFQ12N80P 6V84

    IXFQ12N80P

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS = 800 V = 12 A ≤ 0.85 Ω ≤ 250 ns VDSS ID25 RDS on trr N-Channel Enhancement Mode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS O-247 IXFH12N80P IXFV12N80P PLUS220 IXFQ12N80P