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    IXFN 60N80P Search Results

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    IXFN 60N80P Price and Stock

    Littelfuse Inc IXFN60N80P

    MOSFET N-CH 800V 53A SOT-227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFN60N80P Tube 1
    • 1 $40.71
    • 10 $31.479
    • 100 $40.71
    • 1000 $40.71
    • 10000 $40.71
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    RS IXFN60N80P Bulk 8 Weeks 10
    • 1 -
    • 10 $48.53
    • 100 $48.53
    • 1000 $48.53
    • 10000 $48.53
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    IXYS Corporation IXFN60N80P

    MOSFET Modules DIODE Id54 BVdass800
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFN60N80P 1,312
    • 1 $47.51
    • 10 $41.84
    • 100 $41.84
    • 1000 $41.84
    • 10000 $41.84
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    Newark IXFN60N80P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $32.89
    • 10000 $32.89
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    TTI IXFN60N80P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $41.84
    • 10000 $41.84
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    TME IXFN60N80P 1
    • 1 $61.12
    • 10 $48.62
    • 100 $48.62
    • 1000 $48.62
    • 10000 $48.62
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    New Advantage Corporation IXFN60N80P 10 1
    • 1 -
    • 10 $74.48
    • 100 $74.48
    • 1000 $74.48
    • 10000 $74.48
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    IXYS Integrated Circuits Division IXFN60N80P

    MOSFET MOD.53A 800V N-CH SOT227B HIPERFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXFN60N80P 13
    • 1 $59.35878
    • 10 $55.4755
    • 100 $55.4755
    • 1000 $55.4755
    • 10000 $55.4755
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    IXFN 60N80P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFN60N80P IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 800V 53A SOT-227B Original PDF

    IXFN 60N80P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXFN 60N80P

    Abstract: ixfn60n80p 60N80 60N80P
    Text: PolarHVTM HiPerFET Power MOSFET IXFN 60N80P VDSS ID25 = 800 V = 53 A Ω RDS on ≤ 140 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 60N80P IXFN 60N80P ixfn60n80p 60N80 60N80P

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFN 60N80P VDSS ID25 = 800 V = 53 A Ω RDS on ≤ 140 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 60N80P

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2