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    IXFK170N10 Search Results

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    IXFK170N10 Price and Stock

    IXYS Corporation IXFK170N10

    MOSFET N-CH 100V 170A TO-264AA
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    DigiKey IXFK170N10 Tube 25
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    Mouser Electronics IXFK170N10
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    Littelfuse Inc IXFK170N10P

    MOSFET N-CH 100V 170A TO264AA
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    DigiKey IXFK170N10P Tube 300
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    Verical IXFK170N10P 25 25
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    Arrow Electronics IXFK170N10P 25 44 Weeks 25
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    Newark IXFK170N10P Bulk 300
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    IXYS Corporation IXFK170N10P

    MOSFETs PolarHT HiperFET 100v, 170A
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    Mouser Electronics IXFK170N10P 539
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    TTI IXFK170N10P Tube 300
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    TME IXFK170N10P 39 1
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    New Advantage Corporation IXFK170N10P 18 1
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    IXYS Integrated Circuits Division IXFK170N10P

    MOSFET DIS.170A 100V N-CH TO264 HIPERFET
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    Ozdisan Elektronik IXFK170N10P 23
    • 1 $14.56463
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    • 100 $13.6118
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    IXYS Integrated Circuits Division IXFK170N10

    MOSFET DIS.170A 100V N-CH TO264 HIPERFET THT
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    Ozdisan Elektronik IXFK170N10 5
    • 1 $33.65985
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    • 100 $31.4578
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    IXFK170N10 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXFK170N10 IXYS 100V HiPerFET power MOSFET Original PDF
    IXFK170N10P IXYS PolarHT HiPerFET Power MOSFET Original PDF

    IXFK170N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFN170N10 IXFK170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR TJ = 25°C to 150°C


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    PDF 200ns 200ns IXFN170N10 IXFK170N10 O-264 170N10 ID125 OT-227 E153432

    IXFN170N10

    Abstract: 170N10 125OC IXFK170N10
    Text: HiPerFETTM Power MOSFET IXFN170N10 IXFK170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR T J = 25°C to 150°C


    Original
    PDF IXFN170N10 IXFK170N10 200ns O-264 170N10 ID125 Figure10. IXFN170N10 170N10 125OC IXFK170N10

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFN170N10 IXFK170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR T J = 25°C to 150°C


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    PDF IXFN170N10 IXFK170N10 200ns O-264 170N10 ID125Â Figure10.

    IXFH170N10P

    Abstract: IXFK170N10P 01-07-10-C
    Text: IXFH170N10P IXFK170N10P PolarTM HiperFETTM Power MOSFET VDSS ID25 = 100V = 170A Ω ≤ 9mΩ ≤ 150ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXFH) Symbol Test Conditions VDSS TJ = 25°C to 175°C Maximum Ratings


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    PDF IXFH170N10P IXFK170N10P 150ns O-247 170N10P 01-07-10-C IXFH170N10P IXFK170N10P 01-07-10-C

    BHRH

    Abstract: SOT-227 Package IXFK170N10 IXFN170N10 "SOT-227 B" dimensions 125OC 170N10 D125
    Text: ADVANCE INFORMATION HiPerFETTM Power MOSFET VDSS IXFN170N10 IXFK170N10 10mΩ 10mΩ trr 200ns 200ns TO-264 AA IXFK Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 V DSS V DGR TJ = 25°C to 150°C TJ = 25°C to 150°C 100 100 100 100 V V V GS V GSM


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    PDF IXFN170N10 IXFK170N10 200ns O-264 170N10 BHRH SOT-227 Package IXFK170N10 IXFN170N10 "SOT-227 B" dimensions 125OC 170N10 D125

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiperFETTM Power MOSFET VDSS ID25 IXFH170N10P IXFK170N10P = 100V = 170A Ω ≤ 9mΩ ≤ 150ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXFH) Symbol Test Conditions VDSS TJ = 25°C to 175°C Maximum Ratings


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    PDF IXFH170N10P IXFK170N10P 150ns O-247 170N10P 01-07-10-C

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


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    PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


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    PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    IXFD75N10

    Abstract: IXFD180N07-9X IXFD340N07-9Y
    Text: Insulated Gate Bipolar Transistors IGBT-Chips "S" series with improved SCSOA capability Type VCES VCE sat @ IC Cies typ. Chip type pF tfi typ. 25°C ns V V A 2 20 1800 500 IX4X 5.65 x 4.70 222 x 185 15 mil x 1 IXSH24N60 11 High Speed Low VCE(sat) TJM = 150°C


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    PDF IXFH76N07-12 IXFX180N10 IXFN340N07 IXFX15N8085 IXFH67N10 IXFH75N10 IXFH75N10Q IXFH80N10Q IXFK170N10 IXFN230N10 IXFD75N10 IXFD180N07-9X IXFD340N07-9Y

    IXFd50n20

    Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
    Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type


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    PDF

    IXFD21N100F-8F

    Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50
    Text: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005


    Original
    PDF IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD180N085-9X IXFD280N085-9Y IXFD75N10-7X IXFD80N10Q-8X IXFD170N10-9X IXFD230N10-9Y IXFD70N15-7X IXFD21N100F-8F IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50

    D2562

    Abstract: EE-SS3
    Text: HiPerFET Power MOSFET IXFN170N10 IXFK170N10 vDSS Joîs R 100V 100V 170A 170A 10mQ 10mQ DS on 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Symbol Maximum Ratings IXFK IXFN 170N10 170N10 Test Conditions V V DGfi Ü) Tj = 25°C to 150°C TJ = 25°C to 150°C


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    PDF IXFN170N10 IXFK170N10 200ns 200ns O-264 170N10 OT-227 D2562 EE-SS3

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS ADVANCE INFORMATION ^D25 100V 100V 170A 170A trr DS on a a IXFN170N10 IXFK170N10 D v DSS E E o o HiPerFET Power MOSFET 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Symbol v Maximum Ratings IXFK IXFN 170N10 170N10 Test Conditions Td = 25°C to 150°C


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    PDF IXFN170N10 IXFK170N10 200ns O-264 170N10

    Untitled

    Abstract: No abstract text available
    Text: n ix Y S HiPerFET Power MOSFET IXFN 170N10 IXFK170N10 VDSS ^D25 100 V 100 V 170 A 170 A p DS on 10 mQ 10 mil Single M O S FE T Die Symbol Test Conditions VDSS v TCB Tj Tj VGS v GSM Continuous Transient Us ® u ® Ur Tc Tc Tc Tc Maximum Ratings IXFK IXFN


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    PDF IXFN170N10 IXFK170N10 O-264 OT-227 IXFN170N10 100ms

    POWER MOSFET 4600

    Abstract: MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90
    Text: HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode B Type " dbmm e«» m ax. m ax. m ax. Chip typ * Chip sue cHmehsfons Tm = 150°C V Q A 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.012 0.006 0.004 IXFD67N10-7X XFD75N10-7X


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    PDF 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD67N10-7X XFD75N10-7X IXFD75N10Q-7X XFD80N100-8X XFD170N10-9X XFD230N10-9Y IXFD70N15-7X POWER MOSFET 4600 MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90