Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXFH88N30P Search Results

    SF Impression Pixel

    IXFH88N30P Price and Stock

    IXYS Corporation IXFH88N30P

    MOSFETs 88 Amps 300V 0.04 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFH88N30P 404
    • 1 $14.3
    • 10 $12.6
    • 100 $11.57
    • 1000 $9.87
    • 10000 $9.87
    Buy Now
    Future Electronics IXFH88N30P Tube 40 Weeks 300
    • 1 -
    • 10 -
    • 100 $7.25
    • 1000 $7.14
    • 10000 $7.14
    Buy Now
    TTI IXFH88N30P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $8.43
    • 10000 $8.43
    Buy Now
    TME IXFH88N30P 300 1
    • 1 $14.09
    • 10 $14.09
    • 100 $11.65
    • 1000 $10.64
    • 10000 $10.64
    Buy Now
    New Advantage Corporation IXFH88N30P 24 1
    • 1 -
    • 10 -
    • 100 $20.68
    • 1000 $20.68
    • 10000 $20.68
    Buy Now

    Littelfuse Inc IXFH88N30P

    Discmosfetn-Ch Hiperfet-Polar To-247Ad/ Tube |Littelfuse IXFH88N30P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXFH88N30P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $8.84
    • 10000 $8.84
    Buy Now
    Future Electronics IXFH88N30P Tube 40 Weeks 30
    • 1 -
    • 10 -
    • 100 $9.77
    • 1000 $9.6
    • 10000 $9.6
    Buy Now

    IXFH88N30P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFH88N30P IXYS PolarHT HiPerFET Power MOSFET Original PDF

    IXFH88N30P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    88N30

    Abstract: IXFH88N30P 88N30P IXFK88N30P diode 300v IXFT88N30P
    Text: IXFT88N30P IXFH88N30P IXFK88N30P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 88A Ω 40mΩ 200ns TO-268 (IXFT) G S Tab Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original
    PDF IXFT88N30P IXFH88N30P IXFK88N30P 200ns O-268 IXFT88N30P 88N30P 1-18-09-A 88N30 IXFH88N30P IXFK88N30P diode 300v

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFT88N30P IXFH88N30P IXFK88N30P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 88A Ω 40mΩ 200ns TO-268 (IXFT) G S Tab Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original
    PDF IXFT88N30P IXFH88N30P IXFK88N30P 200ns O-268 IXFT88N30P 88N30P 1-18-09-A

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original
    PDF