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    IXFH16N120P Search Results

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    IXFH16N120P Price and Stock

    Littelfuse Inc IXFH16N120P

    MOSFET N-CH 1200V 16A TO247AD
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    DigiKey IXFH16N120P Tube 2 1
    • 1 $20.46
    • 10 $20.46
    • 100 $16.56567
    • 1000 $14.12965
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    Newark IXFH16N120P Bulk 1
    • 1 $20.05
    • 10 $18.14
    • 100 $16.23
    • 1000 $13.85
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    IXYS Corporation IXFH16N120P

    MOSFETs 1
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    Mouser Electronics IXFH16N120P
    • 1 $20.46
    • 10 $20.46
    • 100 $16.79
    • 1000 $15.6
    • 10000 $15.6
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    Future Electronics IXFH16N120P Tube 300
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    • 100 $15.49
    • 1000 $15.29
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    Bristol Electronics IXFH16N120P 40
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    TTI IXFH16N120P Tube 300
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    • 1000 $13.68
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    TME IXFH16N120P 1
    • 1 $19.39
    • 10 $15.42
    • 100 $14.43
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    Chip 1 Exchange IXFH16N120P 2,336
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    New Advantage Corporation IXFH16N120P 1,497 1
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    • 100 $31.28
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    • 10000 $29.19
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    IXYS Integrated Circuits Division IXFH16N120P

    MOSFET DIS.16A 1200V N-CH TO247AD HIPERFET THT
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    Ozdisan Elektronik IXFH16N120P 1,797
    • 1 $23.36206
    • 10 $23.36206
    • 100 $21.8337
    • 1000 $21.8337
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    IXFH16N120P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXFH16N120P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 16A TO-247 Original PDF

    IXFH16N120P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH16N120P IXFT16N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFH16N120P IXFT16N120P 300ns O-247 25VDS 16N120P

    IXFH16N120P

    Abstract: No abstract text available
    Text: IXFT16N120P IXFH16N120P PolarTM HiPerFETTM Power MOSFETs VDSS ID25 = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFT16N120P IXFH16N120P 300ns O-268 O-247 16N120P 09-12-12-B IXFH16N120P

    IXFH16N120

    Abstract: ixfh16n120p 16N120P 1200v to247 MOSFET
    Text: IXFH16N120P IXFT16N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFH16N120P IXFT16N120P 300ns O-247 16N120P 4-03-08-A IXFH16N120 ixfh16n120p 1200v to247 MOSFET

    IXFH16N120

    Abstract: No abstract text available
    Text: VDSS ID25 IXFH16N120P IXFT16N120P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFH16N120P IXFT16N120P 300ns O-247 16N120P 4-03-08-A IXFH16N120

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF