Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXFD80N10 Search Results

    SF Impression Pixel

    IXFD80N10 Price and Stock

    IXYS Corporation IXFD80N10Q-8XQ

    MOSFET N-CHANNEL 100V DIE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFD80N10Q-8XQ Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXFD80N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXFD80N10

    Abstract: mosfet 4800 SHD224514
    Text: SENSITRON SEMICONDUCTOR SHD224514 TECHNICAL DATA DATA SHEET 1172, REV. A HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 80A, 15 mili Ohm œ Isolated Hermetic Metal Package œ Fast intrinsic Rectifier œ Very Low RDS on œ Low package inductance-easy to drive and protect


    Original     		PDF SHD224514 IXFD80N10 250mA IXFD80N10 mosfet 4800 SHD224514

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    4800 mosfet

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD224514 TECHNICAL DATA DATA SHEET 1172, REV. A HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 80A, 15 mili Ohm œ Isolated Hermetic Metal Package œ Fast intrinsic Rectifier œ Very Low RDS on œ Low package inductance-easy to drive and protect


    Original     		PDF SHD224514 IXFD80N10 SHD224514 O-258 4800 mosfet

    IXFD75N10

    Abstract: IXFD180N07-9X IXFD340N07-9Y
    Text: Insulated Gate Bipolar Transistors IGBT-Chips "S" series with improved SCSOA capability Type VCES VCE sat @ IC Cies typ. Chip type pF tfi typ. 25°C ns V V A 2 20 1800 500 IX4X 5.65 x 4.70 222 x 185 15 mil x 1 IXSH24N60 11 High Speed Low VCE(sat) TJM = 150°C


    Original     		PDF IXFH76N07-12 IXFX180N10 IXFN340N07 IXFX15N8085 IXFH67N10 IXFH75N10 IXFH75N10Q IXFH80N10Q IXFK170N10 IXFN230N10 IXFD75N10 IXFD180N07-9X IXFD340N07-9Y

    IXFd50n20

    Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
    Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type


    Original     		PDF

    IXFD21N100F-8F

    Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50
    Text: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005


    Original     		PDF IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD180N085-9X IXFD280N085-9Y IXFD75N10-7X IXFD80N10Q-8X IXFD170N10-9X IXFD230N10-9Y IXFD70N15-7X IXFD21N100F-8F IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50