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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA10N300HV IXBH10N300HV VCES = 3000V IC110 = 10A VCE sat  3.2V TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000	Original	PDF	IXBA10N300HV IXBH10N300HV IC110 O-263HV 100ms 10N300

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA10N300HV IXBH10N300HV VCES = 3000V IC110 = 10A VCE sat  3.2V TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000

Original

PDF

IXBA10N300HV IXBH10N300HV IC110 O-263HV 100ms 10N300