HFA35HB60
Abstract: No abstract text available
Text: PD-20379 HFA35HB60 HEXFRED TM Ultrafast, Soft Recovery Diode Features VR = 600V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets VF = 1.75V
|
Original
|
PD-20379
HFA35HB60
290nC
HFA35HB60
|
PDF
|
HFA35HB120
Abstract: No abstract text available
Text: PD-20370 HFA35HB120 HEXFRED TM Ultrafast, Soft Recovery Diode Features • • • • • • VR = 1200V ISOLATED BASE Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets
|
Original
|
PD-20370
HFA35HB120
HFA35HB120
|
PDF
|
IRG4BC20U
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD - 9.1448A IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
|
Original
|
IRG4BC20U
O-220AB
O-220Ai
IRG4BC20U
|
PDF
|
IRG4BC20U
Abstract: ts 35 al
Text: PD - 9.1448A IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
|
Original
|
IRG4BC20U
O-220AB
O-220AB
IRG4BC20U
ts 35 al
|
PDF
|
1453a
Abstract: IRG4BC30UD ITT 451 DIODE
Text: PD 9.1453A IRG4BC30UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
|
Original
|
IRG4BC30UD
O-220AB
1453a
IRG4BC30UD
ITT 451 DIODE
|
PDF
|
IRG4PC30UD
Abstract: 6000uf igbt 600V
Text: Previous Datasheet Index Next Data Sheet PD 9.1462 IRG4PC30UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
|
Original
|
IRG4PC30UD
O-247AC
IRG4PC30UD
6000uf
igbt 600V
|
PDF
|
IRG4PC50FD
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD 9.1469 IRG4PC50FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20
|
Original
|
IRG4PC50FD
O-247AC
IRG4PC50FD
|
PDF
|
IRG4PC30UD
Abstract: No abstract text available
Text: PD 9.1462A IRG4PC30UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
|
Original
|
IRG4PC30UD
O-247AC
IRG4PC30UD
|
PDF
|
diode bridge LT 405
Abstract: IRG4BC20UD
Text: PD 9.1449A IRG4BC20UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
|
Original
|
IRG4BC20UD
O-220AB
diode bridge LT 405
IRG4BC20UD
|
PDF
|
IRG4BC30UD
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD 9.1453 IRG4BC30UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
|
Original
|
IRG4BC30UD
O-220AB
IRG4BC30UD
|
PDF
|
IRG4PC50FD
Abstract: diode 10a 400v CC
Text: PD 9.1469A IRG4PC50FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
|
Original
|
IRG4PC50FD
O-247AC
IRG4PC50FD
diode 10a 400v CC
|
PDF
|
IRHM7250
Abstract: IRHM3250 IRHM4250 IRHM8250 JANSF2N7269 JANSR2N7269
Text: PD - 90674C IRHM7250 JANSR2N7269 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA REF: MIL-PRF-19500/603 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM7250 100K Rads (Si) IRHM3250 300K Rads (Si) RDS(on)
|
Original
|
90674C
IRHM7250
JANSR2N7269
O-254AA)
MIL-PRF-19500/603
IRHM3250
JANSF2N7269
IRHM4250
IRHM7250
IRHM3250
IRHM4250
IRHM8250
JANSF2N7269
JANSR2N7269
|
PDF
|
IRG4BC30U
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD - 9.1452C IRG4BC30U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
|
Original
|
1452C
IRG4BC30U
O-220AB
O-220Alim
IRG4BC30U
|
PDF
|
IRG4BC40S
Abstract: TO-220AB IRG4BC40S
Text: Previous Datasheet Index Next Data Sheet PD - 9.1455 IRG4BC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter
|
Original
|
IRG4BC40S
O-220AB
O-220AB
IRG4BC40S
TO-220AB IRG4BC40S
|
PDF
|
|
|
IRHM8450
Abstract: 2N7270 IRHM7450 JANSH2N7270 JANSR2N7270
Text: PD - 90673A IRHM7450 IRHM8450 JANSR2N7270 JANSH2N7270 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 500Volt, 0.45Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage
|
Original
|
0673A
IRHM7450
IRHM8450
JANSR2N7270
JANSH2N7270
500Volt,
1x106
IRHM8450
2N7270
IRHM7450
JANSH2N7270
JANSR2N7270
|
PDF
|
1461C
Abstract: IRG4PC30U
Text: Previous Datasheet Index Next Data Sheet PD - 9.1461C IRG4PC30U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
|
Original
|
1461C
IRG4PC30U
O-247AC
O-247Am
1461C
IRG4PC30U
|
PDF
|
IRG4PC50F
Abstract: 80UF
Text: Previous Datasheet Index Next Data Sheet PD - 9.1468A IRG4PC50F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
|
Original
|
IRG4PC50F
O-247AC
O-247AC
IRG4PC50F
80UF
|
PDF
|
IRG4PC30U
Abstract: No abstract text available
Text: PD - 9.1461D IRG4PC30U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
|
Original
|
1461D
IRG4PC30U
O-247AC
O-247AC
IRG4PC30U
|
PDF
|
irf 460A
Abstract: IRF3710S AN-994 IRF3710
Text: Previous Datasheet Index Next Data Sheet PD 9.1310 IRF3710S PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
|
Original
|
IRF3710S
irf 460A
IRF3710S
AN-994
IRF3710
|
PDF
|
irf 460A
Abstract: IRF3710S IRF3710s equivalent mosfet irf3710 AN-994 IRF3710
Text: PD 9.1310 IRF3710S PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.028Ω G ID = 46A
|
Original
|
IRF3710S
irf 460A
IRF3710S
IRF3710s equivalent
mosfet irf3710
AN-994
IRF3710
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MM54HCT191/MM74HCT191 National Semiconductor PRELIMINARY microCMOS MM54HCT191/MM74HCT191 Synchronous Binary Up/Down Counters with Mode Control General Description These high speed synchronous counters utilize microCMOS technology, 3.0 micron silicon gate N-well CMOS. They pos
|
OCR Scan
|
MM54HCT191/MM74HCT191
MM54HCT191/MM74HCT191
MM54HCT19i/MM
HCT191
HCT191
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD 9.1462A International IOR Rectifier IRG4PC30UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
|
OCR Scan
|
IRG4PC30UD
O-247AC
|
PDF
|
8080 databook
Abstract: No abstract text available
Text: NSCl National Semiconductor January 1994 74LVX 14 Low V o ltage Hex In verter w ith Schm itt T rig g er Input General Description Features The 'LVX14 contains six inverter gates each with a Schmitt trigger input. They are capable of transforming slowly changing input signals into sharply defined, jitter-free output
|
OCR Scan
|
74LVX14
LVX14
8080 databook
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD-5.045 International Iö R Rectifier IGBT SIP MODULE Features CPV362M4K Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 1 0 fis@ 125°C, \feE = 15V • Fully isolated printed circuit board mount package
|
OCR Scan
|
CPV362M4K
360Vdc,
|
PDF
|
