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    transistor bra 44

    Abstract: No abstract text available
    Text: S i GEC P L ES SE Y SEPTEM BERS ADVANCE INFORMATION S E M I C O N D U C T O R S DS4718-2.2 ITS25F12 POWERLINE N-CHANNEL IGBT The ITS25F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		PDF DS4718-2 ITS25F12 ITS25F12 transistor bra 44

    ITS25F12

    Abstract: ITS25F12P T0247 pspice high frequency igbt
    Text: M ITEL S E M IC O N D U C T O R ITS25F12 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4718-2.3 DS4718-3.2 March 1999 Key Parameters The ITS25F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		PDF ITS25F12 DS4718-2 DS4718-3 ITS25F12 T0247 ITS25F12P T0247 pspice high frequency igbt