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    ITS 410 E2 Search Results

    ITS 410 E2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DIYAMP-SOT23-EVM Texas Instruments Universal Do-It-Yourself (DIY) Amplifier Circuit Evaluation Module Visit Texas Instruments Buy
    DIYAMP-SC70-EVM Texas Instruments Universal Do-It-Yourself (DIY) Amplifier Circuit Evaluation Module Visit Texas Instruments Buy
    DIYAMP-SOIC-EVM Texas Instruments Universal Do-It-Yourself (DIY) Amplifier Circuit Evaluation Module Visit Texas Instruments Buy
    RF37S114HTFJB Texas Instruments Tag-it HF-I Type 5 NFC, ISO15693 Transponder, 4 mm x 4 mm 0-RFIDN -25 to 70 Visit Texas Instruments Buy
    RF-HDT-DVBE-N2 Texas Instruments 13.56-MHz Overmolded Transponder based on Tag-it HF-I Standard die 0-RFIDP -25 to 90 Visit Texas Instruments Buy
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    ITS 410 E2 Price and Stock

    Infineon Technologies AG ITS410E2HKSA1

    IC PWR SWITCH N-CHAN 1:1 TO220-5
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    DigiKey ITS410E2HKSA1 Tube
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    Infineon Technologies AG ITS410E2E3043HKSA1

    IC PWR SWITCH N-CHAN 1:1 TO220-5
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    DigiKey ITS410E2E3043HKSA1 Tube
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    Infineon Technologies AG ITS410E2

    SMART HIGHSIDE POWER SWITCH FOR INDUSTRIAL APPICATIONS Buffer/Inverter Based Peripheral Driver, 1 Driver, 1.8A, CMOS, PZFM5
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    ComSIT USA ITS410E2 30
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    ITS 410 E2 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ITS410E2 Infineon Technologies Smart Highside Power Switch for Industrial Applications Original PDF
    ITS410E2E3043 Infineon Technologies PMIC - MOSFET, Bridge Drivers - Internal Switch, Integrated Circuits (ICs), IC SWITCH HISIDE SMART TO220-5 Original PDF
    ITS410E2E3043HKSA1 Infineon Technologies Integrated Circuits (ICs) - PMIC - Power Distribution Switches, Load Drivers - IC SWITCH HISIDE SMART TO220-5 Original PDF
    ITS410E2HKSA1 Infineon Technologies Integrated Circuits (ICs) - PMIC - Power Distribution Switches, Load Drivers - IC SWITCH HISIDE SMART TO220-5 Original PDF

    ITS 410 E2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ITS410E2

    Abstract: PROFET SP000221219 E3043 SP000221227 ITS 410 E2
    Text: PROFET ITS 410 E2 Smart Highside Power Switch for Industrial Applications Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Operating temperature Features • Overload protection • Current limitation


    Original
    PG-TO220AB/5, E3043 E3043 SP000221227 2006-Mar-28 ITS410E2 PROFET SP000221219 SP000221227 ITS 410 E2 PDF

    101B

    Abstract: 101C LS101A LS101A-GS18 LS101B LS101C
    Text: LS101A / 101B / 101C Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC


    Original
    LS101A 2002/95/EC 2002/96/EC 18-Jul-08 101B 101C LS101A-GS18 LS101B LS101C PDF

    31045

    Abstract: c 4106 m ITB02T 02TF-XX MIL 3106 THERMOCOUPLE MIL-DTL-5015 SOCKET PINS PAN B60 3106 diode c 4106 A-20
    Text: Series ITS and ITS-RG Intro Intro Glenair Series ITS and Series ITS-RG MIL-DTL-5015 Type Reverse Bayonet Connectors Product Selection Guide Introduction Your Guide to MIL-DTL-5015 Type Power Products A Technical Reference A B Series ITS B C Series ITS-RG C


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    MIL-DTL-5015 31045 c 4106 m ITB02T 02TF-XX MIL 3106 THERMOCOUPLE MIL-DTL-5015 SOCKET PINS PAN B60 3106 diode c 4106 A-20 PDF

    101B

    Abstract: 101C DO35 LL101 LL101A SD101A SD101AW SD101BW SD101CW 900 mhz schottky diode
    Text: LL101A / 101B / 101C Vishay Semiconductors Small Signal Schottky Diodes Features • For general purpose applications • The LL101 series is a metal-on-silicon Schottky barrier device which is protected e2 by a PN junction guard ring. • The low forward voltage drop and fast


    Original
    LL101A LL101 SD101A, OD123 SD101AW, SD101BW, SD101CW. 08-Apr-05 101B 101C DO35 SD101A SD101AW SD101BW SD101CW 900 mhz schottky diode PDF

    101B

    Abstract: 101C DO35 SD101A SD101A-TAP SD101A-TR SD101B SD101C
    Text: SD101A / 101B / 101C Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC


    Original
    SD101A 2002/95/EC 2002/96/EC 08-Apr-05 101B 101C DO35 SD101A-TAP SD101A-TR SD101B SD101C PDF

    101B

    Abstract: 101C LS101A LS101A-GS18 LS101B LS101C
    Text: LS101A / 101B / 101C Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC


    Original
    LS101A 2002/95/EC 2002/96/EC 08-Apr-05 101B 101C LS101A-GS18 LS101B LS101C PDF

    101B

    Abstract: 101C MCL101A MCL101A-TR MCL101A-TR3 MCL101B MCL101B-TR3 MCL101C
    Text: MCL101A / 101B / 101C Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC


    Original
    MCL101A 2002/95/EC 2002/96/EC 08-Apr-05 101B 101C MCL101A-TR MCL101A-TR3 MCL101B MCL101B-TR3 MCL101C PDF

    DO35

    Abstract: SD101A SD101A-TAP SD101A-TR SD101B SD101C
    Text: SD101A/101B/101C Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC


    Original
    SD101A/101B/101C 2002/95/EC 2002/96/EC TR/10 TAP/10 08-Apr-05 DO35 SD101A SD101A-TAP SD101A-TR SD101B SD101C PDF

    101B

    Abstract: 101C DO35 SD101A SD101A-TAP SD101A-TR SD101B SD101C
    Text: SD101A / 101B / 101C Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC


    Original
    SD101A 2002/95/EC 2002/96/EC D-74025 03-Apr-06 101B 101C DO35 SD101A-TAP SD101A-TR SD101B SD101C PDF

    101B

    Abstract: 101C DO35 LL101 LL101A SD101A SD101AW SD101BW SD101CW
    Text: LL101A / 101B / 101C Vishay Semiconductors Small Signal Schottky Diodes Features • For general purpose applications • The LL101 series is a metal-on-silicon Schottky barrier device which is protected e2 by a PN junction guard ring. • The low forward voltage drop and fast


    Original
    LL101A LL101 SD101A, OD123 SD101AW, SD101BW, SD101CW. 18-Jul-08 101B 101C DO35 SD101A SD101AW SD101BW SD101CW PDF

    DO35

    Abstract: SD101A SD101A-TAP SD101A-TR SD101B SD101C
    Text: SD101A/101B/101C Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC


    Original
    SD101A/101B/101C 2002/95/EC 2002/96/EC TR/10 TAP/10 18-Jul-08 DO35 SD101A SD101A-TAP SD101A-TR SD101B SD101C PDF

    101B

    Abstract: 101C MCL101A MCL101A-TR MCL101A-TR3 MCL101B MCL101B-TR3 MCL101C
    Text: MCL101A / 101B / 101C Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC


    Original
    MCL101A 2002/95/EC 2002/96/EC 18-Jul-08 101B 101C MCL101A-TR MCL101A-TR3 MCL101B MCL101B-TR3 MCL101C PDF

    ntc rt 5a

    Abstract: SNT01B snt01
    Text: SNT Series NTC Thermistors SMD Type MERITEK RoHS FEATURES UL E223037 • EIA size 0402, 0603, 0805, 1206  Highly reliable monolithic structure  Wide resistance range  Cost effective  Agency recognition: UL PART NUMBERING SYSTEM SNT 01 A 901 F


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    E223037 B25/85 B25/50 ntc rt 5a SNT01B snt01 PDF

    F1E6

    Abstract: No abstract text available
    Text: IDTCSPUA877 1.8V PLL DIFFERENTIAL 1:10 SDRAM CLOCK DRIVER COMMERCIAL TEMPERATURE RANGE 1.8V PHASE LOCKED LOOP DIFFERENTIAL 1:10 SDRAM CLOCK DRIVER IDTCSPUA877 DESCRIPTION: FEATURES: The CSPUA877 is a PLL based clock driver that acts as a zero delay buffer


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    IDTCSPUA877 IDTCSPUA877 125MHz 410MHz CUA877 SSTUA3286re CSPUA877 F1E6 PDF

    Untitled

    Abstract: No abstract text available
    Text: IDTCSPUA877 1.8V PLL DIFFERENTIAL 1:10 SDRAM CLOCK DRIVER COMMERCIAL TEMPERATURE RANGE 1.8V PHASE LOCKED LOOP DIFFERENTIAL 1:10 SDRAM CLOCK DRIVER IDTCSPUA877 FEATURES: DESCRIPTION: • 1 to 10 differential clock distribution • Optimized for clock distribution in DDR2 Double Data Rate


    Original
    IDTCSPUA877 125MHz 410MHz CSPUA877 CSPUA877 PDF

    Untitled

    Abstract: No abstract text available
    Text: IDTCSPUA877A 1.8V PLL DIFFERENTIAL 1:10 SDRAM CLOCK DRIVER COMMERCIAL TEMPERATURE RANGE 1.8V PHASE LOCKED LOOP DIFFERENTIAL 1:10 SDRAM CLOCK DRIVER IDTCSPUA877A FEATURES: DESCRIPTION: • 1 to 10 differential clock distribution • Optimized for clock distribution in DDR2 Double Data Rate


    Original
    IDTCSPUA877A 125MHz 410MHz IDTCSPUA877A CSPUA877A PDF

    CSPUA877

    Abstract: No abstract text available
    Text: IDTCSPUA877 1.8V PLL DIFFERENTIAL 1:10 SDRAM CLOCK DRIVER COMMERCIAL TEMPERATURE RANGE 1.8V PHASE LOCKED LOOP DIFFERENTIAL 1:10 SDRAM CLOCK DRIVER IDTCSPUA877 FEATURES: DESCRIPTION: • 1 to 10 differential clock distribution • Optimized for clock distribution in DDR2 Double Data Rate


    Original
    IDTCSPUA877 125MHz 410MHz IDTCSPUA877 CSPUA877 PDF

    marking z3p

    Abstract: Y4P marking code marking z2p marking y6p marking z4p marking z8p b5v6 marking z5p marking z6P inverter LS600
    Text: • ^53*131 00SS7b0 211 H A P X N AMER PHI LIPS /DISCRETE BZX84 SERIES L.7E ]> SILICON PLANAR VOLTAGE REGULATOR DIODES Low power general purpose voltage regulator diodes in a micro m iniature plastic envelope. They are available in three series; one to the international standardized E24 (± 5% range, one in a tolerance of


    OCR Scan
    00SS7b0 BZX84 DDSS77D marking z3p Y4P marking code marking z2p marking y6p marking z4p marking z8p b5v6 marking z5p marking z6P inverter LS600 PDF

    bel 187 transistor

    Abstract: RTC406 LBE2003S LBE2009S LCE2003S LCE2009S BEL 187 npn
    Text: A 1I N AMER O bE P H ILIP S/D ISC R ETE D bbSBTBl O G lM ^ n b LB E /LC E 2 0 0 3S LB E /LC E2 0 0 9S T - 3 3 - Ö S - M IC R O W A V E LINEAR PO W ER T R A N SIST O R S N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz.


    OCR Scan
    LBE/LCE2003S LBE/LCE2009S LBE2Q03S LBE2009S LCE2003S LCE2009S LBE/LCE200Striplines bel 187 transistor RTC406 LBE2003S BEL 187 npn PDF

    C15 DO-34

    Abstract: B6V2 C3V33
    Text: BZV60 SERIES J \ _ VOLTAGE REGULATOR DIODES Silicon planar diodes in DO-34 envelopes intended fo r use as low voltage stabilizers o r voltage references. They are available in international standardized E24 ± 5% range and ± 2% tolerance range. The series


    OCR Scan
    BZV60 DO-34 OD-68 DO-34) 7Z83041 C15 DO-34 B6V2 C3V33 PDF

    transistor SMD t07

    Abstract: SMD Transistor t07 BTS 302 BTS 410 E2 E3043 STT 3 SIEMENS transistor t07 circuit diagram obd diagnostic bts 410d2 SMD code E2 BTS410E2
    Text: • flE35b05 OOfllMBO T07 ■ SIEM EN S PROFET BTS410E2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • • • • •


    OCR Scan
    flE35b05 BTS410E2 023Sb05 TQ-220AB/5 Q67060-S6102-A2 CPI05t6S O-22QAB/5, E3043 E3043 Q67060-S6102-A3 transistor SMD t07 SMD Transistor t07 BTS 302 BTS 410 E2 E3043 STT 3 SIEMENS transistor t07 circuit diagram obd diagnostic bts 410d2 SMD code E2 BTS410E2 PDF

    over charge protection circuit diagram for 12V ni mh

    Abstract: smd zener diode code B2 transistor smd ZR 3H DIODE smd 41002 410E2 BTS410E2 WN smd transistor 410G2 smd diode EG - 413
    Text: 023SbD5 □ □ eï 2 b f l c] 3 1 7 • SIEM EN S PROFET BTS410E2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features * Overload protection • Current limitation


    OCR Scan
    023SbD5 BTS410E2 Q67060-S6102-A2 CPT05115 O-22QAB/5, E3062 BTS410E2 E3062A Q67060-S6102-A4 over charge protection circuit diagram for 12V ni mh smd zener diode code B2 transistor smd ZR 3H DIODE smd 41002 410E2 WN smd transistor 410G2 smd diode EG - 413 PDF

    diode zener ZD H2

    Abstract: BTS410 bts410 siemens BTS 410 E2 E3043 235L 410E2 410H BTS410H2 ZD11 Q67060-S6105
    Text: û235hD5 QOfilbOl T7fl S IE M E N S PROFET BTS410H2 Smart Highside Power Switch F eatures • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump Fast demagnetization of inductive loads


    OCR Scan
    235hD5 BTS410H2 TQ-220AB/5 O-220AB/5, E3043 Q67060-S6105 E3043 Q67060-S6105-A3 O-22QAB/5, diode zener ZD H2 BTS410 bts410 siemens BTS 410 E2 E3043 235L 410E2 410H BTS410H2 ZD11 PDF

    bts41002

    Abstract: SIEMENS TD-400 SmD TRANSISTOR a77 B37 zener diode b37 zener 410e2 BTS 410 E2 E3043 smd code l17 transistor 6 pin SMD Z2 410H
    Text: f l23 5b0 5 DDfiimb t.37 SIEM EN S PROFET BTS 410 D2 Smart Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump


    OCR Scan
    fl235b05 23SLi05 TQ-220AB/5 Q67060-S6101-A2 O-22QAB/5, E3043 Q67060-S6101-A3 E3062 bts41002 SIEMENS TD-400 SmD TRANSISTOR a77 B37 zener diode b37 zener 410e2 BTS 410 E2 E3043 smd code l17 transistor 6 pin SMD Z2 410H PDF