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D02fc Abstract: ITE13F06 Text: Si GE C P L E S S E Y SHM C O N D U C T O R S PRELIMINARY INFORMATION D S 4310 -1.2 IT E 1 3 F 0 6 /IT E 1 3 C 0 6 POWERLINE N-CHANNELIGBT WITH OPTIONAL ULTRAFAST DIODE The ITE13X06 is a robust n-channel, enhancement mode insulated gate bipolar transistor (IGBT designed for	OCR Scan	PDF	ITE13X06 ITE13X06 37bfi5E2 37bflS22 2b361 002b3Ã D02fc ITE13F06

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Abstract: ITE13F06
Text: Si GE C P L E S S E Y SHM C O N D U C T O R S PRELIMINARY INFORMATION D S 4310 -1.2 IT E 1 3 F 0 6 /IT E 1 3 C 0 6 POWERLINE N-CHANNELIGBT WITH OPTIONAL ULTRAFAST DIODE The ITE13X06 is a robust n-channel, enhancement mode insulated gate bipolar transistor (IGBT designed for

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ITE13X06 ITE13X06 37bfi5E2 37bflS22 2b361 002b3Ã D02fc ITE13F06