a1712 mosfet
Abstract: A1712
Text: Ordering number : ENA1712A ATP214 N-Channel Power MOSFET http://onsemi.com 60V, 75A, 8.1mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.) Halogen free compliance •
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ENA1712A
ATP214
4850pF
PW10s)
PW10s,
L100H,
A1712-7/7
a1712 mosfet
A1712
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A1712
Abstract: a1712 mosfet
Text: ATP214 Ordering number : ENA1712A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.)
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ATP214
ENA1712A
4850pF
A1712-7/7
A1712
a1712 mosfet
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a1712
Abstract: a1712 mosfet a1712-1 ENA1712
Text: ATP214 Ordering number : ENA1712 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive • • Input Capacitance Ciss=4850pF(typ.) Halogen free compliance
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ENA1712
ATP214
4850pF
PW10s)
PW10s,
A1712-4/4
a1712
a1712 mosfet
a1712-1
ENA1712
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a1712 mosfet
Abstract: A1712
Text: ATP214 Ordering number : ENA1712A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.)
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Original
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PDF
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ATP214
ENA1712A
4850pF
A1712-7/7
a1712 mosfet
A1712
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a1712
Abstract: a1712 mosfet a1712 transistor a1712-1 ATP214 ENA1712 A1712-4
Text: ATP214 Ordering number : ENA1712 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive • • Input Capacitance Ciss=4850pF(typ.) Halogen free compliance
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ATP214
ENA1712
4850pF
PW10s,
PW10s)
A1712-4/4
a1712
a1712 mosfet
a1712 transistor
a1712-1
ATP214
ENA1712
A1712-4
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A1712
Abstract: a1712 mosfet a1712-1 A1712-4 4850p S4850 ATP214
Text: ATP214 注文コード No. N A 1 7 1 2 三洋半導体データシート N ATP214 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ オン抵抗 RDS on 1=6.2mΩ(typ.) ・ 4V 駆動 ・ 入力容量 Ciss=4850pF(typ.)
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ATP214
4850pF
JEDET15696
IT15711
IT15514
A1712-3/4
A1712
a1712 mosfet
a1712-1
A1712-4
4850p
S4850
ATP214
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