EMH1303
Abstract: No abstract text available
Text: EMH1303 Ordering number : ENA0661 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EMH1303 General-Purpose Switching Device Applications Features • • Low ON-resistance. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage
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EMH1303
ENA0661
1200mm20
A0661-4/4
EMH1303
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EMH1303
Abstract: A06611 A0661
Text: EMH1303 注文コード No. N A 0 6 6 1 三洋半導体データシート N EMH1303 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・1.8V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃
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PDF
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EMH1303
1200mm2
IT12944
--28A
PW10s
1200mm2
IT13034
IT12946
A0661-4/4
EMH1303
A06611
A0661
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA0661A EMH1303 P-Channel Power MOSFET http://onsemi.com –12V, –7A, 23mΩ, Single EMH8 Features • • • Low ON-resistance 1.8V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage
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Original
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ENA0661A
EMH1303
PW10s,
1200mm2
A0661-7/7
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emh1303
Abstract: No abstract text available
Text: EMH1303 Ordering number : ENA0661 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EMH1303 General-Purpose Switching Device Applications Features • • Low ON-resistance. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage
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Original
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PDF
|
EMH1303
ENA0661
1200mm2â
A0661-4/4
emh1303
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Untitled
Abstract: No abstract text available
Text: EMH1303 Ordering number : ENA0661A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EMH1303 General-Purpose Switching Device Applications Features • • • Low ON-resistance 1.8V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C
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Original
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PDF
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EMH1303
ENA0661A
1200mm2Ã
A0661-7/7
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