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    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1055B SBE807 Schottky Barrier Diode http://onsemi.com 30V, 1A, Low IR Applications • High frequency rectification switching regulators, converters, and choppers Features • Low switching noise • Low reverse current (VR=16V, IR max=15µA)


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    PDF ENA1055B SBE807 A1055-4/4

    Untitled

    Abstract: No abstract text available
    Text: CPH5871 Ordering number : ENA1401A SANYO Semiconductors DATA SHEET MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5871 General-Purpose Switching Device Applications Features • • • • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package


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    PDF CPH5871 ENA1401A A1401-7/7

    Untitled

    Abstract: No abstract text available
    Text: SBE807 Ordering number : ENA1055A SANYO Semiconductors DATA SHEET SBE807 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, and choppers Features • • Low switching noise Low reverse current (VR=16V, IR max=15µA)


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    PDF SBE807 ENA1055A A1055-6/6

    A1055

    Abstract: No abstract text available
    Text: SBE807 Ordering number : ENA1055A SANYO Semiconductors DATA SHEET SBE807 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, and choppers Features • • Low switching noise Low reverse current (VR=16V, IR max=15 A)


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    PDF ENA1055A SBE807 017A-001 SBE807-TL-E A1055-6/6 A1055

    SBE807

    Abstract: No abstract text available
    Text: SBE807 Ordering number : ENA1055 SANYO Semiconductors DATA SHEET SBE807 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, and choppers . Features • • Low switching noise. Low reverse current (VR=16V, IR max=15 A).


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    PDF SBE807 ENA1055 125formation A1055-3/3 SBE807

    CPH5852

    Abstract: MCH3312 SB1003M3 A0336-3
    Text: CPH5852 注文コード No. N A 0 3 3 6 三洋半導体データシート N CPH5852 MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・P チャネル MOS 型電界効果トランジスタ(MCH3312 とショットキバリアダイオード(SB1003M3)


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    PDF CPH5852 MCH3312) SB1003M3 600mm2 60506PE TB-00002326 A0336-1/5 IT09554 CPH5852 MCH3312 A0336-3

    CPH5854

    Abstract: MCH3312 SB1003M3 A0516
    Text: CPH5854 注文コード No. N A 0 5 1 6 三洋半導体データシート N CPH5854 MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・P チャネル MOS 型電界効果トランジスタ(MCH3312 とショットキバリアダイオード(SB1003M3)


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    PDF CPH5854 MCH3312) SB1003M3 600mm2 90606PE TC-00000163 A0516-1/5 IT09554 CPH5854 MCH3312 A0516

    Untitled

    Abstract: No abstract text available
    Text: SB1003M3 Ordering number : EN8375A SANYO Semiconductors DATA SHEET SB1003M3 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • • Low switching noise Low leakage current and high reliability due to highly reliable planar structure


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    PDF SB1003M3 EN8375A

    Untitled

    Abstract: No abstract text available
    Text: SBE807 Ordering number : ENA1055 SANYO Semiconductors DATA SHEET SBE807 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, and choppers . Features • • Low switching noise. Low reverse current (VR=16V, IR max=15 A).


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    PDF SBE807 ENA1055 A1055-3/3

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA8375B SB1003M3 Schottky Barrier Diode 30V, 1A, Low IR, Single MCPH3 http://onsemi.com Applications • High frequency rectification switching regulators, converters, choppers Features • • • • Low switching noise Low leakage current and high reliability due to highly reliable planar structure


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    PDF ENA8375B SB1003M3

    Untitled

    Abstract: No abstract text available
    Text: SB1003M3 Ordering number : ENN8375 SB1003M3 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low leakage current and high reliability due to highly reliable planar structure.


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    PDF SB1003M3 ENN8375

    ta 8375

    Abstract: SB1003M3
    Text: SB1003M3 Ordering number : ENN8375 SB1003M3 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low leakage current and high reliability due to highly reliable planar structure.


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    PDF SB1003M3 ENN8375 ta 8375 SB1003M3

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1055A SBE807 Schottky Barrier Diode http://onsemi.com 30V, 1A, Low IR, Non-Monolithic Dual CPH5 Common Cathode Applications • High frequency rectification switching regulators, converters, and choppers Features • • Low switching noise


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    PDF ENA1055A SBE807 A1055-6/6

    82306

    Abstract: MCH3312 CPH5852 SB1003M3
    Text: CPH5852 Ordering number : ENA0336 SANYO Semiconductors DATA SHEET CPH5852 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type containing a P-Channel MOSFET MCH3312 and a Schottky Barrier Diode (SB1003M3),


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    PDF CPH5852 ENA0336 MCH3312) SB1003M3) A0336-6/6 82306 MCH3312 CPH5852 SB1003M3

    SB1003M3

    Abstract: No abstract text available
    Text: SB1003M3 注文コード No. N 8 3 7 5 三洋半導体データシート N SB1003M3 ショットキバリアダイオード 30V, 1.0A 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。


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    PDF SB1003M3 100mA, 72mm2 500mm 62797GI TB-00001533 63005SB BX-0698 IT09554 SB1003M3

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1401A CPH5871 N-Channel Power MOSFET 30V, 3.5A, 52mΩ, Single CPH5 with Schottky Diode http://onsemi.com Features • • • • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting


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    PDF ENA1401A CPH5871 A1401-7/7

    Untitled

    Abstract: No abstract text available
    Text: CPH5871 Ordering number : ENA1401 SANYO Semiconductors DATA SHEET CPH5871 Features • • • • MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package


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    PDF CPH5871 ENA1401 A1401-5/5

    A1401

    Abstract: IT09556 A1401-5
    Text: CPH5871 注文コード No. N A 1 4 0 1 三洋半導体データシート N CPH5871 MOSFET : N チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・ N チャネル MOS 型電界効果トランジスタとショットキバリアダイオードを 1 パッケージに内蔵した複合タイプ


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    PDF CPH5871 600mm2 12809PE TC-00001794 A1401-1/5 IT09554 A1401-4/5 A1401 IT09556 A1401-5

    MCH3312

    Abstract: CPH5854 SB1003M3 A05166 marking YG
    Text: CPH5854 Ordering number : ENA0516 SANYO Semiconductors DATA SHEET CPH5854 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type containing a P-Channel MOSFET MCH3312 and a Schottky Barrier Diode (SB1003M3),


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    PDF CPH5854 ENA0516 MCH3312) SB1003M3) A0516-6/6 MCH3312 CPH5854 SB1003M3 A05166 marking YG

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN8375A SB1003M3 Schottky Barrier Diode http://onsemi.com 30V, 1A, Low IR, Single MCPH3 Applications • High frequency rectification switching regulators, converters, choppers Features • • • Low switching noise Low leakage current and high reliability due to highly reliable planar structure


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    PDF EN8375A SB1003M3

    Untitled

    Abstract: No abstract text available
    Text: SBE807 Ordering number : ENA1055 SANYO Semiconductors DATA SHEET SBE807 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, and choppers . Features • • Low switching noise. Low reverse current (VR=16V, IR max=15 A).


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    PDF SBE807 ENA1055 A1055-3/3

    Untitled

    Abstract: No abstract text available
    Text: SB1003M3 Ordering number : EN8375A SANYO Semiconductors DATA SHEET SB1003M3 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • • Low switching noise Low leakage current and high reliability due to highly reliable planar structure


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    PDF EN8375A SB1003M3

    SS1003M3

    Abstract: No abstract text available
    Text: SS1003M3 Ordering number : EN8372A SANYO Semiconductors DATA SHEET SS1003M3 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low forward voltage (IF=1.0A, VF max=0.43V).


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    PDF SS1003M3 EN8372A SS1003M3

    VR 100K

    Abstract: SS1003M3 ID00435 VR100K
    Text: SS1003M3 注文コード No. N 8 3 7 2 A 三洋半導体データシート 半導体ニューズ No.N8372 をさしかえてください。 SS1003M3 ショットキバリアダイオード 30V1.0A 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。


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    PDF SS1003M3 N8372 100mA, 72mm2 500mm 62797GI TB-00001532 IT09557 IT09559 VR 100K SS1003M3 ID00435 VR100K