Untitled
Abstract: No abstract text available
Text: Ordering number : EN8586A 2SJ661 P-Channel Power MOSFET http://onsemi.com –60V, –38A, 39mΩ, TO-262-3L/TO-263-2L Features • • ON-resistance RDS on 1=29.5mΩ(typ.) 4V drive • Input capacitance Ciss=4360pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C
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EN8586A
2SJ661
O-262-3L/TO-263-2L
4360pF
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2SJ665
Abstract: No abstract text available
Text: 2SJ665 Ordering number : EN8590 P-Channel Silicon MOSFET 2SJ665 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.
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2SJ665
EN8590
2SJ665
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2SJ661
Abstract: No abstract text available
Text: 2SJ661 Ordering number : EN8586 P-Channel Silicon MOSFET 2SJ661 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.
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2SJ661
EN8586
2SJ661
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2SJ661
Abstract: D100003
Text: 2SJ661 注文コード No. N 8 5 8 6 三洋半導体データシート N 2SJ661 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。
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2SJ661
IT08757
IT08756
--38A
--152A
IT08735
IT08758
2SJ661
D100003
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Untitled
Abstract: No abstract text available
Text: 2SJ661 Ordering number : EN8586A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ661 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=29.5mΩ(typ.) 4V drive • Input capacitance Ciss=4360pF (typ.) Specifications
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2SJ661
EN8586A
4360pF
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Untitled
Abstract: No abstract text available
Text: 2SJ665 Ordering number : EN8590A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ665 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=59mΩ(typ.) 4V drive Input capacitance Ciss=4200pF (typ.) • Specifications
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2SJ665
EN8590A
4200pF
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J665
Abstract: 75350-01
Text: 2SJ665 Ordering number : EN8590A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ665 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=59mΩ(typ.) 4V drive Input capacitance Ciss=4200pF (typ.) • Specifications
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EN8590A
2SJ665
4200pF
PW10s,
--30V,
--27A
J665
75350-01
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN8590A 2SJ665 P-Channel Power MOSFET http://onsemi.com –100V, –27A, 77mΩ, TO-263-2L Features • • ON-resistance RDS on 1=59mΩ(typ.) 4V drive • Input capacitance Ciss=4200pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C
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EN8590A
2SJ665
O-263-2L
4200pF
PW10s,
--30V,
--27A
L100H,
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