SB2003M
Abstract: EN837-1 marking se
Text: SB2003M Ordering number : EN8371A SANYO Semiconductors DATA SHEET SB2003M Schottky Barrier Diode 30V, 2.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low leakage current and high reliability due to highly reliable planar structure.
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SB2003M
EN8371A
SB2003M
EN837-1
marking se
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VEC2819
Abstract: No abstract text available
Text: VEC2819 Ordering number : ENA0536A SANYO Semiconductors DATA SHEET VEC2819 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features DC / DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
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VEC2819
ENA0536A
A0536-6/6
VEC2819
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Untitled
Abstract: No abstract text available
Text: SB2003M Ordering number : EN8371B SANYO Semiconductors DATA SHEET Schottky Barrier Diode SB2003M 30V, 2.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • • Low switching noise Low leakage current and high reliability due to highly reliable planar structure
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SB2003M
EN8371B
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN8371C SB2003M Schottky Barrier Diode http://onsemi.com 30V, 2A, Low IR, Single MCPH6 Applications • High frequency rectification switching regulators, converters, choppers Features • Halogen free compliance • Low switching noise
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EN8371C
SB2003M
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Untitled
Abstract: No abstract text available
Text: SBE811 Ordering number : ENN8376 SBE811 Schottky Barrier Diode 30V, 2.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Small switching noise. Low leakage current and high reliability due to highly reliable planar structure.
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SBE811
ENN8376
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SBE811
Abstract: No abstract text available
Text: SBE811 Ordering number : EN8376A SANYO Semiconductors DATA SHEET SBE811 Schottky Barrier Diode 30V, 2.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Small switching noise. Low leakage current and high reliability due to highly reliable planar structure.
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SBE811
EN8376A
SBE811
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VEC2819
Abstract: No abstract text available
Text: VEC2819 Ordering number : ENA0536 SANYO Semiconductors DATA SHEET VEC2819 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features DC / DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
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Original
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VEC2819
ENA0536
A0536-6/6
VEC2819
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PDF
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SB2003M
Abstract: No abstract text available
Text: SB2003M 注文コード No. N 8 3 7 1 A 三洋半導体データシート 半導体データシート No.N8371 をさしかえてください。 SB2003M ショットキバリアダイオード 30V, 2.0A 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。
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SB2003M
N8371
100mA,
44mm2
500mm
62797GI
TB-00001375
62405SB
IT08588
SB2003M
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PDF
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Untitled
Abstract: No abstract text available
Text: SB2003M Ordering number : EN8371B SANYO Semiconductors DATA SHEET Schottky Barrier Diode SB2003M 30V, 2.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • • Low switching noise Low leakage current and high reliability due to highly reliable planar structure
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EN8371B
SB2003M
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN8371B SB2003M Schottky Barrier Diode http://onsemi.com 30V, 2A, Low IR, Single MCPH6 Applications • High frequency rectification switching regulators, converters, choppers Features • • • Low switching noise Low leakage current and high reliability due to highly reliable planar structure
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EN8371B
SB2003M
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SB2003M
Abstract: No abstract text available
Text: SB2003M Ordering number : ENN8371 SB2003M Schottky Barrier Diode 30V, 2.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low leakage current and high reliability due to highly reliable planar structure.
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SB2003M
ENN8371
SB2003M
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VEC2819
Abstract: A0536
Text: VEC2819 注文コード No. N A 0 5 3 6 A 三洋半導体データシート 半導体データシート No.NA0536 をさしかえてください。 VEC2819 MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード
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VEC2819
NA0536
1200mm2
/13107PE
TC-00000472
A0536-1/6
IT08589
IT08588
VEC2819
A0536
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PDF
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