SCH1417
Abstract: No abstract text available
Text: SCH1417 Ordering number : ENN8164 N-Channel Silicon MOSFET SCH1417 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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SCH1417
ENN8164
900mm2
SCH1417
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SCH1417
Abstract: SCH2817 SS05015SH Vgs mosfet TB-00001069
Text: SCH2817 注文コード No. N 8 1 5 5 MOSFET : N チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード SCH2817 汎用スイッチングデバイス 特長 ・N チャネル MOS 形電界効果トランジスタ（SCH1417）
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SCH2817
SCH1417
SS05015SH
900mm2
TB-00001069
IT06804
IT06805
IT06806
SCH1417
SCH2817
Vgs mosfet
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8162-2
Abstract: 8162 MCH3456
Text: MCH3456 Ordering number : EN8162A SANYO Semiconductors DATA SHEET MCH3456 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C
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MCH3456
EN8162A
900mm2
8162-2
8162
MCH3456
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SCH1417
Abstract: SCH2817 SS05015SH TB-00001069
Text: SCH2817 Ordering number : ENN8155 SCH2817 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-Channel Silicon MOSFET SCH1417 and a Schottky Barrier Diode (SS05015SH)
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SCH2817
ENN8155
SCH1417)
SS05015SH)
SCH1417
SCH2817
SS05015SH
TB-00001069
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MCH3456
Abstract: No abstract text available
Text: MCH3456 Ordering number : ENN8162 MCH3456 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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MCH3456
ENN8162
900mm2
MCH3456
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Untitled
Abstract: No abstract text available
Text: MCH3456 Ordering number : EN8162A MCH3456 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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EN8162A
MCH3456
900mm2
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MCH3456
Abstract: MCH5826 SS05015SH
Text: MCH5826 Ordering number : ENN8163 MCH5826 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with a N-Channel Silicon MOSFET MCH3456 and a Schottky Barrier Diode (SS05015SH)
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MCH5826
ENN8163
MCH3456)
SS05015SH)
MCH3456
MCH5826
SS05015SH
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SCH1417
Abstract: 8164-2
Text: SCH1417 注文コード No. N 8 1 6 4 SCH1417 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・1.8V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃
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SCH1417
900mm2
IT08583
900mm2
IT08684
IT08685
SCH1417
8164-2
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