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    SCH2301

    Abstract: No abstract text available
    Text: SCH2301 Ordering number : EN8974 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SCH2301 General-Purpose Switching Device Applications Features • • • • • The SCH2301 incorporates two elements in the same package which are P-channel MOSFETs, thereby enabling


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    PDF SCH2301 EN8974 SCH2301

    3LP03M

    Abstract: TYP300V
    Text: 3LP03M 注文コード No. N 8 1 5 4 3LP03M P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・高速スイッチング。 ・2.5V 駆動。 ・高静電耐量 TYP300V [ゲート・ソース間保護用片側 Di 内蔵]。


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    PDF 3LP03M TYP300V) 120mA 120mA, IT07659 --10V --15V IT08164 IT08166 3LP03M TYP300V

    MCH6629

    Abstract: D1306 TYP300V
    Text: MCH6629 注文コード No. N 8 2 3 9 A 三洋半導体データシート 半導体ニューズ No.N8239 をさしかえてください。 MCH6629 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長


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    PDF MCH6629 N8239 TYP300V) 900mm2 IT08166 IT09251 IT09252 IT09253 MCH6629 D1306 TYP300V

    SCH2301

    Abstract: TYP300V
    Text: SCH2301 注文コード No. N 8 9 7 4 三洋半導体データシート N SCH2301 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。


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    PDF SCH2301 TYP300V) 900mm2 IT08166 IT08165 900mm2 IT08470 IT08471 SCH2301 TYP300V

    MCH6634

    Abstract: No abstract text available
    Text: MCH6634 Ordering number : ENN8229 N-Channel and P-Channel Silicon MOSFETs MCH6634 General-Purpose Switching Device Applications Features • • • • The MCH6634 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.


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    PDF MCH6634 ENN8229 MCH6634

    3LP03SS

    Abstract: No abstract text available
    Text: 3LP03SS Ordering number : EN8649 P-Channel Silicon MOSFET 3LP03SS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High resistance to damage from ESD TYP 300V [with a protection diode connected between the gate and source].


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    PDF 3LP03SS EN8649 3LP03SS

    3LP03S

    Abstract: A00104
    Text: 3LP03S Ordering number : ENA0010 P-Channel Silicon MOSFET 3LP03S General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].


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    PDF 3LP03S ENA0010 A0010-4/4 3LP03S A00104

    SCH2601

    Abstract: No abstract text available
    Text: SCH2601 Ordering number : ENN8329 N-Channel and P-Channel Silicon MOSFETs SCH2601 General-Purpose Switching Device Applications Features • • • • • The SCH2601 incorporates two elements in the same package which are N-channel MOSFETs, thereby enabling


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    PDF SCH2601 ENN8329 SCH2601

    Untitled

    Abstract: No abstract text available
    Text: 3LP03M Ordering number : ENN8154 P-Channel Silicon MOSFET 3LP03M General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].


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    PDF 3LP03M ENN8154 3LP03M/D

    MCH6629

    Abstract: 8239 D1306
    Text: MCH6629 Ordering number : EN8239A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6629 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. High ESD voltage TYP 300V


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    PDF MCH6629 EN8239A MCH6629 8239 D1306

    MCH6629

    Abstract: 8239 D1306
    Text: MCH6629 Ordering number : EN8239A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6629 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. High ESD voltage TYP 300V


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    PDF MCH6629 EN8239A MCH6629 8239 D1306

    MCH6634

    Abstract: No abstract text available
    Text: MCH6634 Ordering number : EN8229A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs MCH6634 General-Purpose Switching Device Applications Features • • • • The MCH6634 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance


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    PDF MCH6634 EN8229A MCH6634

    MCH6634

    Abstract: TYP300V
    Text: MCH6634 注文コード No. N 8 2 2 9 A 三洋半導体データシート 半導体ニューズ No.N8229 とさしかえてください。 MCH6634 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス


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    PDF MCH6634 N8229 TYP300V) 900mm2 350mA 350mA, 200mA, 900mm2 IT09238 MCH6634 TYP300V

    SCH2601

    Abstract: TYP300V
    Text: SCH2601 注文コード No. N 8 3 2 9 三洋半導体データシート N SCH2601 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。


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    PDF SCH2601 TYP300V 900mm2 350mA 350mA, 200mA, IT08166 900mm2 IT09569 SCH2601

    marking XG

    Abstract: sw 8154 if 3LP03M
    Text: 3LP03M Ordering number : ENN8154 P-Channel Silicon MOSFET 3LP03M General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].


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    PDF 3LP03M ENN8154 marking XG sw 8154 if 3LP03M

    EC4304C

    Abstract: No abstract text available
    Text: EC4304C Ordering number : ENN8124 P-Channel Silicon MOSFET EC4304C General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High resistance to damage from ESD typ 300V [with a protection diode connected between the gate and source].


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    PDF EC4304C ENN8124 EC4304C

    8239

    Abstract: MCH6629
    Text: MCH6629 Ordering number : ENN8239 P-Channel Silicon MOSFET MCH6629 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. High ESD voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].


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    PDF MCH6629 ENN8239 8239 MCH6629