3LN03SS
Abstract: is350 marking YG
Text: 3LN03SS Ordering number : ENN8231 N-Channel Silicon MOSFET 3LN03SS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].
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3LN03SS
ENN8231
3LN03SS
is350
marking YG
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Untitled
Abstract: No abstract text available
Text: 3LN03M Ordering number : ENN8153 N-Channel Silicon MOSFET 3LN03M General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].
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3LN03M
ENN8153
3LN03M/D
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Untitled
Abstract: No abstract text available
Text: 3LN03SS Ordering number : ENN8231 N-Channel Silicon MOSFET 3LN03SS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].
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3LN03SS
ENN8231
3LN03SS/D
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3LN03S
Abstract: marking YG
Text: 3LN03S Ordering number : ENA0011 N-Channel Silicon MOSFET 3LN03S General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].
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3LN03S
ENA0011
PW10s,
A0011-4/4
3LN03S
marking YG
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marking YG
Abstract: 3LN03S
Text: 3LN03S Ordering number : ENA0011 N-Channel Silicon MOSFET 3LN03S General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].
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3LN03S
ENA0011
A0011-4/4
marking YG
3LN03S
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diode marking YG
Abstract: CISS 3010 3LN03M marking YG
Text: 3LN03M Ordering number : ENN8153 N-Channel Silicon MOSFET 3LN03M General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].
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3LN03M
ENN8153
diode marking YG
CISS 3010
3LN03M
marking YG
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3LN03SS
Abstract: D2006 TYP300V IT08161 IT07519
Text: 3LN03SS 注文コード No. N 8 2 3 1 三洋半導体データシート N 3LN03SS N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・高速スイッチング。 ・2.5V 駆動。
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3LN03SS
TYP300V)
180mA
180mA,
IT07518
IT07516
IT07514
IT07519
IT07521
3LN03SS
D2006
TYP300V
IT08161
IT07519
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EC4404C
Abstract: No abstract text available
Text: EC4404C Ordering number : ENN8122 N-Channel Silicon MOSFET EC4404C General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High resistance to damage from ESD typ 300V [with a protection diode connected between the gate and source].
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EC4404C
ENN8122
EC4404C
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