Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IT06545 Search Results

    IT06545 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J652

    Abstract: No abstract text available
    Text: Ordering number : ENN7625 2SJ652 P-Channl Silicon MOSFET 2SJ652 General-Purpose Switching Device Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. unit : mm 2063A [2SJ652]


    Original
    PDF ENN7625 2SJ652 2SJ652] O-220ML J652

    j652

    Abstract: No abstract text available
    Text: Ordering number : EN7625A 2SJ652 P-Channel Power MOSFET http://onsemi.com –60V, –28A, 38mΩ, TO-220F-3SG Features • • • ON-resistance RDS on 1=28.5mΩ(typ.) Input capacitance Ciss=4360pF (typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25°C


    Original
    PDF EN7625A 2SJ652 O-220F-3SG 4360pF PW10s, --30V, --28A L500H, j652

    Untitled

    Abstract: No abstract text available
    Text: 2SJ652 Ordering number : EN7625A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ652 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=28.5mΩ(typ.) Input capacitance Ciss=4360pF (typ.) 4V drive Specifications


    Original
    PDF 2SJ652 EN7625A 4360pF

    j652

    Abstract: 2SJ652
    Text: 2SJ652 Ordering number : EN7625A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ652 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=28.5mΩ(typ.) Input capacitance Ciss=4360pF (typ.) 4V drive Specifications


    Original
    PDF EN7625A 2SJ652 4360pF PW10s, --30V, j652 2SJ652

    J652

    Abstract: 2SJ652
    Text: 注文コード No. N 7 6 2 5 2SJ652 三洋半導体データシート N 2SJ652 特長 P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。


    Original
    PDF 2SJ652 --112A IT06541 --10V IT06543 IT06545 IT06544 J652 2SJ652

    J653

    Abstract: 2SJ653 TA4246
    Text: 注文コード No. N 7 6 2 6 2SJ653 三洋半導体データシート N 2SJ653 特長 P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。


    Original
    PDF 2SJ653 --30V --37V IT06552 --10V IT06554 IT06545 J653 2SJ653 TA4246

    J653

    Abstract: 2SJ653
    Text: Ordering number : ENN7626 2SJ653 P-Channl Silicon MOSFET 2SJ653 General-Purpose Switching Device Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. unit : mm 2063A [2SJ653]


    Original
    PDF ENN7626 2SJ653 2SJ653] O-220ML J653 2SJ653

    j652

    Abstract: 2SJ652
    Text: Ordering number : ENN7625 2SJ652 P-Channl Silicon MOSFET 2SJ652 General-Purpose Switching Device Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. unit : mm 2063A [2SJ652]


    Original
    PDF ENN7625 2SJ652 2SJ652] O-220ML j652 2SJ652