74682
Abstract: 74684 74685 CPH5813 MCH3318 SBS010M
Text: 注文コード No. N 7 4 6 8 CPH5813 No. N 7 4 6 8 32803 新 CPH5813 特長 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード DC / DC コンバータ用 ・P チャネル MOS 形電界効果トランジスタ（MCH3318）とショットキバリアダイオード（SBS010M）を
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CPH5813
MCH3318
SBS010M
600mm2
IT05881
IT05883
IT00625
IT00626
74682
74684
74685
CPH5813
MCH3318
SBS010M
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74674
Abstract: CPH5812 MCH3317 SBS010M TA-3787
Text: Ordering number : ENN7467 CPH5812 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5812 DC / DC Converter Applications 4 0.15 3 0.6 5 0.2 [CPH5812] 2.9 0.05 1 2 0.95 0.4 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.9 0.7 0.2 • Composite type with a P-Channel Sillicon MOSFET
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ENN7467
CPH5812
CPH5812]
MCH3317)
SBS010M)
74674
CPH5812
MCH3317
SBS010M
TA-3787
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN7472 SBS010M Schottky Barrier Diode SBS010M 15V, 2A Rectifier Applications • Package Dimensions High frequency rectification switching regulators, converters, choppers . unit : mm 1305A [SBS010M] 0.15 2 1 0.65 0.07 1.6 3 0.25 • Low forward voltage (IF=0.5A, VF max=0.32V)
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ENN7472
SBS010M
SBS010M]
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Untitled
Abstract: No abstract text available
Text: CPH5822 Ordering number : ENN7702 CPH5822 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General Purpose Switching Device Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS010M)
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ENN7702
CPH5822
MCH3312)
SBS010M)
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AN 7468
Abstract: CPH5813 MCH3318 SBS010M TA-3804 IT00 74684
Text: Ordering number : ENN7468 CPH5813 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5813 DC / DC Converter Applications 4 0.15 3 0.6 5 0.2 [CPH5813] 2.9 0.05 1 2 0.95 0.4 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.9 0.7 0.2 • Composite type with a P-Channel Sillicon MOSFET
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ENN7468
CPH5813
CPH5813]
MCH3318)
SBS010M)
AN 7468
CPH5813
MCH3318
SBS010M
TA-3804
IT00
74684
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