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    Wilcoxon Sensing Technologies IT035

    5-POS CBL CONN TBUS DIRECT
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    DFRobot FIT0359

    FILAMENT YELLOW PVA 0.118" 500G
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    DFRobot FIT0356

    ADDRESS LED STRIP RGB 1M
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    Infineon Technologies AG CY8CKIT-035

    KIT DEV PSOC POWER MANAGEMENT
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    IT035 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IT035 Wilcoxon Sensing Technologies 5-POS CBL CONN TBUS DIRECT Original PDF

    IT035 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MCH3307

    Abstract: SBS004 ENN8235 2171A
    Text: CPH5838 Ordering number : ENN8235 CPH5838 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converters. Composite type with a P-Channel Sillicon MOSFET MCH3307 and a Schottky Barrier Diode (SBS004)


    Original     		PDF CPH5838 ENN8235 MCH3307) SBS004) MCH3307 SBS004 ENN8235 2171A

    2SC5778

    Abstract: No abstract text available
    Text: Ordering number : ENN6992 2SC5778 NPN Triple Diffused Planar Silicon Transistor 2SC5778 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions unit : mm 2174A [2SC5778] 5.6 3.4 16.0 3.1 0.8 21.0


    Original     		PDF ENN6992 2SC5778 2SC5778] 2SC5778

    2SC2812

    Abstract: 2SK1740 FC21 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965
    Text: Ordering number : ENN7021 FC21 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET FC21 High-Frequency Amplifier, AM tuner RF Amplifier Applications • Package Dimensions The FC21 contains both a 2SK1740 equivalent chip and a 2SC2812 equivalent chip in the CP package,


    Original     		PDF ENN7021 2SK1740 2SC2812 FC21 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965

    2SC5777

    Abstract: TA-3323
    Text: Ordering number : ENN6991 2SC5777 NPN Triple Diffused Planar Silicon Transistor 2SC5777 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1600V . High reliability (Adoption of HVP process).


    Original     		PDF ENN6991 2SC5777 2SC5777] 2SC5777 TA-3323

    A0780

    Abstract: MCH3307 MCH5836 SS10015M a07801
    Text: MCH5836 注文コード No. N A 0 7 8 0 A 三洋半導体データシート 半導体データシート No.NA0780 をさしかえてください。 MCH5836 MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード


    Original     		PDF MCH5836 NA0780 MCH3307) SS10015M) 900mm2 41807PE TC-00000614 A0780-1/6 A0780 MCH3307 MCH5836 SS10015M a07801

    2SK3486

    Abstract: No abstract text available
    Text: Ordering number : ENN7197 2SK3486 N-Channel Silicon MOSFET 2SK3486 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2062A [2SK3486] 4.5 1.6 0.4 1.0


    Original     		PDF ENN7197 2SK3486 2SK3486] 25max 2SK3486

    MCH3406

    Abstract: ENN7010 SANYO marking kf mosfet marking kf
    Text: Ordering number : ENN7010 MCH3406 N-Channel Silicon MOSFET MCH3406 Ultrahigh-Speed Switching Applications Features • • Low ON-state resistance. Ultrahigh-speed switching. 1.8V drive. unit : mm 2167A [MCH3406] 0.3 0.25 • Package Dimensions 0.15 0.25 2


    Original     		PDF ENN7010 MCH3406 MCH3406] MCH3406 ENN7010 SANYO marking kf mosfet marking kf

    CPH6413

    Abstract: No abstract text available
    Text: 注文コード No. N 7 3 1 9 CPH6413 三洋半導体データシート N CPH6413 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・2.5V 駆動。


    Original     		PDF CPH6413 1200mm2 1200mm2 IT03623 IT03624 CPH6413

    CPH6413

    Abstract: No abstract text available
    Text: 注文コード No. N 7 3 1 9 CPH6413 No. N7319 83002 新 CPH6413 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・2.5V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


    Original     		PDF CPH6413 N7319 1200mm2 1200mm2 IT03623 IT03624 CPH6413

    MCH3307

    Abstract: MCH5836 SS10015M
    Text: MCH5836 Ordering number : ENA0780 SANYO Semiconductors DATA SHEET MCH5836 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-channel silicon MOSFET MCH3307 and a schottky barrier diode (SS10015M)


    Original     		PDF MCH5836 ENA0780 MCH3307) SS10015M) A0780-6/6 MCH3307 MCH5836 SS10015M

    2SC5793

    Abstract: No abstract text available
    Text: 2SC5793 Ordering number : EN7451A SANYO Semiconductors DATA SHEET 2SC5793 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1600V .


    Original     		PDF 2SC5793 EN7451A 2SC5793

    N7010

    Abstract: MCH3406
    Text: 注文コード No. N 7 0 1 0 MCH3406 No. N7010 71801 新 MCH3406 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・1.8V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


    Original     		PDF MCH3406 N7010 900mm2 900mm2 IT03499 IT03500 N7010 MCH3406

    N7012

    Abstract: MCH6405
    Text: 注文コード No. N 7 0 1 2 MCH6405 No. N7012 71801 新 MCH6405 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・2.5V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


    Original     		PDF MCH6405 N7012 900mm2 IT03519 900mm2 IT03521 IT03522 N7012 MCH6405

    2SC5776

    Abstract: TA-3322
    Text: Ordering number : ENN6990 2SC5776 NPN Triple Diffused Planar Silicon Transistor 2SC5776 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1600V . High reliability (Adoption of HVP process).


    Original     		PDF ENN6990 2SC5776 2SC5776] 2SC5776 TA-3322

    MCH3307

    Abstract: 70072
    Text: Ordering number : ENN7007 MCH3307 P-Channel Silicon MOSFET MCH3307 Ultrahigh-Speed Switching Applications Features • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2167A [MCH3307] 0.3 0.25 • Package Dimensions 0.15 0.25 2 1 0.65


    Original     		PDF ENN7007 MCH3307 MCH3307] MCH3307 70072

    IC 74173

    Abstract: 2SC5933 74171
    Text: Ordering number : ENN7417 2SC5933 NPN Triple Diffused Planar Silicon Transistor 2SC5933 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process).


    Original     		PDF ENN7417 2SC5933 2048B 2SC5933] IC 74173 2SC5933 74171

    IC 74173

    Abstract: 74171 N2503 2SC5933 N7417
    Text: 注文コード No. N 7 4 1 7 2SC5933 No. N7417 N2503 新 NPN 三重拡散プレーナ形シリコントランジスタ 2SC5933 特長 超高精細度 CRT ディスプレイ 水平偏向出力用 ・高速度である。 ・高耐圧である （VCBO=1600V）


    Original     		PDF 2SC5933 N7417 N2503 2048B IT03589 IT03590 IT03581 IT03591 IC 74173 74171 N2503 2SC5933 N7417

    2SC5778

    Abstract: 52003 ta-3321
    Text: Ordering number : ENN6992A 2SC5778 NPN Triple Diffused Planar Silicon Transistor 2SC5778 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions unit : mm 2174A [2SC5778] 5.6 3.4 16.0 3.1 0.8 21.0


    Original     		PDF ENN6992A 2SC5778 2SC5778] 2SC5778 52003 ta-3321

    ic63a

    Abstract: 2SC5791
    Text: Ordering number : ENN6993A 2SC5791 NPN Triple Diffused Planar Silicon Transistor 2SC5791 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1600V .


    Original     		PDF ENN6993A 2SC5791 2SC5791] ic63a 2SC5791

    2SC5776

    Abstract: No abstract text available
    Text: Ordering number : ENN6990A 2SC5776 NPN Triple Diffused Planar Silicon Transistor 2SC5776 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1600V . High reliability (Adoption of HVP process).


    Original     		PDF ENN6990A 2SC5776 2SC5776] 2SC5776

    2sc5792

    Abstract: No abstract text available
    Text: Ordering number : ENN6994 2SC5792 NPN Triple Diffused Planar Silicon Transistor 2SC5792 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process).


    Original     		PDF ENN6994 2SC5792 2SC5792] 2sc5792

    IC 74164

    Abstract: ic 74163 IC 74161 2SC5932
    Text: Ordering number : ENN7416 2SC5932 NPN Triple Diffused Planar Silicon Transistor 2SC5932 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process).


    Original     		PDF ENN7416 2SC5932 2048B 2SC5932] IC 74164 ic 74163 IC 74161 2SC5932

    2SC5793

    Abstract: N7451 74512
    Text: 注文コード No. N 7 4 5 1 2SC5793 No. N7451 31504 新 NPN 三重拡散プレーナ形シリコントランジスタ 2SC5793 特長 超高精細度 CRT ディスプレイ 水平偏向出力用 ・高速度である。 ・高耐圧である （VCBO=1600V）


    Original     		PDF 2SC5793 N7451 IT03579 IT03580 IT03581 IT03582 2SC5793 N7451 74512

    PC525

    Abstract: 2SC5794 74521 2174A
    Text: 注文コード No. N 7 4 5 2 2SC5794 No. N7452 31504 新 NPN 三重拡散プレーナ形シリコントランジスタ 2SC5794 特長 超高精細度 CRT ディスプレイ 水平偏向出力用 ・高速度である。 ・高耐圧である （VCBO=1600V）


    Original     		PDF 2SC5794 N7452 IT03589 IT03590 IT03581 IT03591 PC525 2SC5794 74521 2174A