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Catalog Datasheet	MFG & Type	Document Tags	PDF
MCH3306 Abstract: ENN6900 Text: Ordering number : ENN6900 MCH3306 P-Channel Silicon MOSFET MCH3306 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. unit : mm 2167 [MCH3306] 0.25 • 0.3 0.15 2 0.65 0.25 1	Original	ENN6900 MCH3306 MCH3306] MCH3306 ENN6900	PDF
SCH1302 Abstract: No abstract text available Text: Ordering number : ENN7532 SCH1302 P-Channel Silicon MOSFET SCH1302 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. unit : mm 2221 [SCH1302] Top View 1.6 0.05 0.2 0.15	Original	ENN7532 SCH1302 SCH1302] SCH1302	PDF
Untitled Abstract: No abstract text available Text: CPH5848 Ordering number : EN8690 SANYO Semiconductors DATA SHEET CPH5848 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Applications • DC / DC converters. Features • Composite type with a P-Channel Sillicon MOSFET MCH3306 and a Schottky Barrier Diode (SS10015M)	Original	EN8690 CPH5848 MCH3306) SS10015M)	PDF
7552 Abstract: 2SJ658 Text: Ordering number : ENN7552 2SJ658 P-Channel Silicon MOSFET 2SJ658 High-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. High-speed switching. 2.5V drive. unit : mm 2178 [2SJ658] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5 0.44 14.0	Original	ENN7552 2SJ658 2SJ658] 7552 2SJ658	PDF
CPH5802 Abstract: MCH3306 SBS004 Text: Ordering number : ENN6899 CPH5802 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5802 DC / DC Converter Applications Package Dimensions unit : mm 2171 [CPH5802] 2.9 0.15 0.2 4 3 0.6 5 0.05 2.8 1.6 Composite type with a P-Channel Sillicon MOSFET	Original	ENN6899 CPH5802 CPH5802] MCH3306) SBS004) CPH5802 MCH3306 SBS004	PDF
Untitled Abstract: No abstract text available Text: Ordering number : ENN6899 CPH5802 CPH5802 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Package Dimensions unit : mm 2171 [CPH5802] 2.9 0.15 0.2 4 3 2.8 0.6 5 1.6 Composite type with a P-Channel Sillicon MOSFET	Original	ENN6899 CPH5802 CPH5802] MCH3306) SBS004) CPH5802/D	PDF
SCH1302 Abstract: No abstract text available Text: 注文コード No. N 7 5 3 2 SCH1302 三洋半導体データシート N SCH1302 特長 P チャネル MOS 形シリコン電界効果トランジスタ超高速スイッチング用・低オン抵抗。・超高速スイッチング。・1.8V 駆動。	Original	SCH1302 900mm2 --10V IT02757 900mm2 IT05691 IT05679 SCH1302	PDF
75522 Abstract: 2SJ658 Text: 注文コード No. N 7 5 5 2 2SJ658 三洋半導体データシート N 2SJ658 特長 P チャネル MOS 形シリコン電界効果トランジスタ高速スイッチング用・低オン抵抗。・高速スイッチング。・2.5V 駆動。絶対最大定格 Absolute Maximum Ratings / Ta=25℃	Original	2SJ658 --10V IT02759 IT05565 IT05566 75522 2SJ658	PDF
CPH6315 Abstract: MARKING JR TA-3310 Text: Ordering number : ENN7018 CPH6315 P-Channel Silicon MOSFET CPH6315 High-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. High-speed switching. 2.5V drive. unit : mm 2151A [CPH6315] 0.15 2.9 5 4 0.6 6 0.2 • 0.6 1.6 2.8 0.05	Original	ENN7018 CPH6315 CPH6315] CPH6315 MARKING JR TA-3310	PDF
TA-3048 Abstract: CPH5802 MCH3306 SBS004 Text: 注文コード No. N 6 8 9 9 CPH5802 No. N 6 8 9 9 12201 新 CPH5802 特長 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード DC / DC コンバータ用・P チャネル MOS 形電界効果トランジスタ	Original	CPH5802 MCH3306 SBS004 SBD12 600mm2 IT00623 IT00622 IT00624 IT00625 TA-3048 CPH5802 MCH3306	PDF
MCH3306 Abstract: No abstract text available Text: 注文コード No. N 6 9 0 0 MCH3306 No. N 6 9 0 0 12201 新 MCH3306 特長 P チャネル MOS 形シリコン電界効果トランジスタ超高速スイッチング用・低オン抵抗。・超高速スイッチング。・1.8V 駆動。絶対最大定格 Absolute Maximum Ratings / Ta=25℃	Original	MCH3306 900mm2 --10V IT02759 900mm2 IT02764 IT02765 MCH3306	PDF