MCH6601
Abstract: TA-2457
Text: Ordering number:ENN6458 P-Channel Silicon MOSFET MCH6601 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2173 [MCH6601] 0.3 5 2 3 0.65 0.25 1 0.15 4 1.6 6 2.1 • Low ON resistance. · Ultrahigh-speed swithcing. · 2.5V drive. · Composite type with 2 MOSFETs contained in one
|
Original
|
PDF
|
ENN6458
MCH6601
MCH6601]
MCH6601
TA-2457
|
TA-2457
Abstract: MCH6601 IT00079 non6458a IT00085
Text: MCH6601 注文コード No. N 6 4 5 8 B 三洋半導体データシート 半導体ニューズ No.N6458A とさしかえてください。 MCH6601 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長
|
Original
|
PDF
|
MCH6601
N6458A
900mm2
IT00088
900mm2
IT00087
--10V
--100mA
IT01733
TA-2457
MCH6601
IT00079
non6458a
IT00085
|
Untitled
Abstract: No abstract text available
Text: MCH6601 Ordering number : EN6458A P-Channel Silicon MOSFET MCH6601 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
|
Original
|
PDF
|
EN6458A
MCH6601
900mm2
|
Untitled
Abstract: No abstract text available
Text: MCH6601 Ordering number : EN6458B P-Channel Silicon MOSFET MCH6601 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
|
Original
|
PDF
|
MCH6601
EN6458B
900mm2
|
Untitled
Abstract: No abstract text available
Text: MCH6601 Ordering number : EN6458B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6601 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
|
Original
|
PDF
|
EN6458B
MCH6601
900mm2
|
Untitled
Abstract: No abstract text available
Text: Ordering number : EN6458D MCH6601 P-Channel Power MOSFET http://onsemi.com –30V, –0.2A, 10.4Ω, Dual MCPH6 Features • • • • Low ON-resistance Ultrahigh-speed switching 1.5V drive Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting
|
Original
|
PDF
|
EN6458D
MCH6601
PW10s,
900mm2
20where
|
en645
Abstract: MCH6601
Text: MCH6601 Ordering number : EN6458B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6601 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
|
Original
|
PDF
|
MCH6601
EN6458B
900mm2
en645
MCH6601
|
Untitled
Abstract: No abstract text available
Text: MCH6601 Ordering number : EN6458C SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6601 General-Purpose Switching Device Applications Features • • • • Low ON-resistance Ultrahigh-speed switching 1.5V drive Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting
|
Original
|
PDF
|
MCH6601
EN6458C
900mm2Ã
|