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    MCH6606

    Abstract: No abstract text available
    Text: Ordering number:ENN6461 N-Channel Silicon MOSFET MCH6606 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2173 [MCH6606] 0.3 5 2 3 0.65 0.25 1 0.15 4 1.6 6 2.1 • Low ON resistance. · Ultrahigh-speed swithcing. · 4V drive. · Composite type with 2 MOSFETs contained in one


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    PDF ENN6461 MCH6606 MCH6606] MCH6606

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    Abstract: No abstract text available
    Text: MCH6606 Ordering number : EN6461A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6606 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.


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    PDF EN6461A MCH6606 900mm2

    MCH6606

    Abstract: IT00049
    Text: MCH6606 注文コード No. N 6 4 6 1 B 三洋半導体データシート 半導体データシート No.N6461A をさしかえてください。 MCH6606 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス


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    PDF MCH6606 N6461A 900mm2 IT00052 900mm2 IT01731 IT01732 MCH6606 IT00049

    Untitled

    Abstract: No abstract text available
    Text: MCH6606 Ordering number : EN6461A N-Channel Silicon MOSFET MCH6606 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.


    Original
    PDF MCH6606 EN6461A

    MCH6606

    Abstract: No abstract text available
    Text: MCH6606 Ordering number : EN6461B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6606 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.


    Original
    PDF MCH6606 EN6461B MCH6606