TA-2770
Abstract: 2SJ416 FX856 53723
Text: 注文コード No. N 5 3 7 2 A FX856 No. N 5 3 7 2 A 30100 新 開発速報 No. ※ 5372 とさしかえてください。 FX856 特長 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード
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FX856
FX856
2SJ416
SB07-03P
750mm2
IT01339
IT01337
IT01341
IT01342
TA-2770
2SJ416
53723
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2SJ416
Abstract: FX856 SB07-03P 53723
Text: Ordering number:ENN5372A MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FX856 DC/DC Converter Applications Package Dimensions unit:mm 2119 [FX856] 5.0 0.5 1.5 1.5 6 0.7 5 5.9 1.0 • The FX856 composite device consists of following two devices to facilitate high-density mounting. One
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ENN5372A
FX856
FX856]
FX856
2SJ416
SB07-03P,
SB07-03P
53723
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN5372A MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FX856 DC/DC Converter Applications Package Dimensions unit:mm 2119 [FX856] 5.0 0.5 1.5 1.5 6 0.7 5 5.9 1.0 • The FX856 composite device consists of following two devices to facilitate high-density mounting. One
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Original
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PDF
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ENN5372A
FX856
FX856]
FX856
2SJ416
SB07-03P,
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