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    TA-2770

    Abstract: 2SJ416 FX856 53723
    Text: 注文コード No. N 5 3 7 2 A FX856 No. N 5 3 7 2 A 30100 新 開発速報 No. ※ 5372 とさしかえてください。 FX856 特長 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード


    Original     		FX856 FX856 2SJ416 SB07-03P 750mm2 IT01339 IT01337 IT01341 IT01342 TA-2770 2SJ416 53723 PDF

    2SJ416

    Abstract: FX856 SB07-03P 53723
    Text: Ordering number:ENN5372A MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FX856 DC/DC Converter Applications Package Dimensions unit:mm 2119 [FX856] 5.0 0.5 1.5 1.5 6 0.7 5 5.9 1.0 • The FX856 composite device consists of following two devices to facilitate high-density mounting. One


    Original     		ENN5372A FX856 FX856] FX856 2SJ416 SB07-03P, SB07-03P 53723 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN5372A MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FX856 DC/DC Converter Applications Package Dimensions unit:mm 2119 [FX856] 5.0 0.5 1.5 1.5 6 0.7 5 5.9 1.0 • The FX856 composite device consists of following two devices to facilitate high-density mounting. One


    Original     		ENN5372A FX856 FX856] FX856 2SJ416 SB07-03P, PDF