Untitled
Abstract: No abstract text available
Text: MCH6609 Ordering number : EN7041B P-Channel Silicon MOSFET MCH6609 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
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MCH6609
EN7041B
900mm2
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MCH6609
Abstract: No abstract text available
Text: Ordering number : ENN7041 MCH6609 P-Channel Silicon MOSFET MCH6609 Ultrahigh-Speed Switching Applications Preliminary • 0.25 2.1 • Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive. Composite type with 2 MOSFETs contained in a single
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ENN7041
MCH6609
MCH6609]
MCH6609
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TA2190
Abstract: 5LP02C
Text: 5LP02C Ordering number : EN6425A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 5LP02C General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C
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5LP02C
EN6425A
TA2190
5LP02C
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MCH6609
Abstract: TA-2464
Text: MCH6609 注文コード No. N 7 0 4 1 B 三洋半導体データシート 半導体ニューズ No.N7041A とさしかえてください。 MCH6609 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長
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MCH6609
N7041A
900mm2
0V-20
900mm2
IT00298
IT00297
IT03639
IT03637
MCH6609
TA-2464
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN6565 P-Channel Silicon MOSFET 5LP02SP Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2180 [5LP02SP] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 3
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ENN6565
5LP02SP
5LP02SP]
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bx 18A
Abstract: 2SJ268 ITR00278 ITR00279 ITR00280 ITR00281 ITR00282
Text: 注文コード No.N 4 2 3 7 2SJ268 No. 4 2 3 7 三洋半導体ニューズ 61599 新 2SJ268 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。
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2SJ268
IT00284
--30V
--10V
ITR00282
IT00285
IT00286
IT00287
bx 18A
2SJ268
ITR00278
ITR00279
ITR00280
ITR00281
ITR00282
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SB02W03CH
Abstract: No abstract text available
Text: SB02W03CH 注文コード No. N 8 0 6 0 A 三洋半導体データシート 半導体データシート No.N8060 をさしかえてください。 SB02W03CH ショットキバリアダイオード ツインタイプ・カソードコモン 30V, 200mA 整流素子
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SB02W03CH
N8060
200mA
250mm2
21505SB
TB-00000608
015A-002
SB02W03CH
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29833
Abstract: D2000 SB02W03C
Text: 注文コード No. N 2 9 8 3 A SB02W03C No. N 2 9 8 3 A D2000 半導体ニューズ No.2983 とさしかえてください。 SB02W03C ショットキバリアダイオード（ツインタイプ・カソードコモン） 30V200mA 整流素子 用途
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SB02W03C
D2000
30V200mA
200mA
ID00285
ID00284
ID00286
IT00287
29833
D2000
SB02W03C
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8060
Abstract: SB02W03CH marking se
Text: SB02W03CH Ordering number : EN8060A SANYO Semiconductors DATA SHEET SB02W03CH Schottky Barrier Diode Twin Type • Cathode Common 30V, 200mA Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features •
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SB02W03CH
EN8060A
200mA
8060
SB02W03CH
marking se
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Untitled
Abstract: No abstract text available
Text: 5LP02M Ordering number : EN6126A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 5LP02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C
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EN6126A
5LP02M
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5LP02SP
Abstract: No abstract text available
Text: 注文コード No. N 6 5 6 5 5LP02SP No. N6565 63000 新 5LP02SP 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・2.5V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃
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5LP02SP
N6565
IT00292
IT00291
IT00297
IT00298
IT01981
5LP02SP
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN6126 P-Channel Silicon MOSFET 5LP02M Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2158 0.3 0.2 0.425 [5LP02M] 0.15 3 0.425 2.1 1.250 0 to 0.1
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ENN6126
5LP02M
5LP02M]
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ta2190
Abstract: No abstract text available
Text: Ordering number:ENN6425 P-Channel Silicon MOSFET 5LP02C Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2091A [5LP02C] 0.5 0.4 3 0.16 0.95 0.95 2 1.9 2.9 2.5 1 : Gate
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ENN6425
5LP02C
5LP02C]
ta2190
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TA-2968
Abstract: 6564-1 TA29
Text: Ordering number:ENN6564 P-Channel Silicon MOSFET 5LP02N Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2178 [5LP02N] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5 0.44 14.0 0.45
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ENN6564
5LP02N
5LP02N]
TA-2968
6564-1
TA29
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MCH6609
Abstract: TA-2464
Text: MCH6609 Ordering number : EN7041B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6609 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
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MCH6609
EN7041B
900mm2
MCH6609
TA-2464
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5LP02M
Abstract: No abstract text available
Text: 5LP02M Ordering number : EN6126A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 5LP02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C
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5LP02M
EN6126A
5LP02M
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Untitled
Abstract: No abstract text available
Text: MCH6609 Ordering number : EN7041A P-Channel Silicon MOSFET MCH6609 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
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EN7041A
MCH6609
900mm2
25ric
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it-007
Abstract: No abstract text available
Text: 5LP02C Ordering number : EN6425A P-Channel Silicon MOSFET 5LP02C General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions
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5LP02C
EN6425A
it-007
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Untitled
Abstract: No abstract text available
Text: 5LP02M Ordering number : EN6126A P-Channel Silicon MOSFET 5LP02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions
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5LP02M
EN6126A
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