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    Untitled

    Abstract: No abstract text available
    Text: MCH6607 Ordering number : EN7039A P-Channel Silicon MOSFET MCH6607 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.


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    PDF MCH6607 EN7039A 900mm2

    MCH6614

    Abstract: No abstract text available
    Text: Ordering number : ENN6795 MCH6614 N-Channel and P-Channel Silicon MOSFET MCH6614 Ultrahigh-Speed Switching Applications • The MCH6614 incorporates two elements that are an unit : mm N-channel and a P-channel MOSFETs that feature low 2173 ON resistance and high-speed switching, thereby


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    PDF ENN6795 MCH6614 MCH6614 MCH6614]

    MCH6607

    Abstract: No abstract text available
    Text: Ordering number : ENN7039 MCH6607 P-Channel Silicon MOSFET MCH6607 Ultrahigh-Speed Switching Applications Preliminary • 0.25 2.1 • Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive. Composite type with 2 MOSFETs contained in a single


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    PDF ENN7039 MCH6607 MCH6607] MCH6607

    3LP02C

    Abstract: 63853 TA2007
    Text: 注文コード No. N 6 3 8 5 3LP02C No. N 6 3 8 5 O0599 3LP02C 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・2.5V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


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    PDF 3LP02C O0599 100mA 100mA, IT00243 IT00242 --10V IT00241 3LP02C 63853 TA2007

    70306

    Abstract: MCH6615 IT0251
    Text: MCH6615 Ordering number : EN6796A SANYO Semiconductors DATA SHEET MCH6615 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low


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    PDF MCH6615 EN6796A MCH6615 70306 IT0251

    Untitled

    Abstract: No abstract text available
    Text: 3LP02M Ordering number : EN6127A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3LP02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C


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    PDF EN6127A 3LP02M

    IT0251

    Abstract: ta2909 MCH6614 TA-2909
    Text: MCH6614 注文コード No. N 6 7 9 5 A 三洋半導体データシート 半導体ニューズ No.N6795 をさしかえてください。 MCH6614 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス


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    PDF MCH6614 N6795 900mm2 --200mA 900mm2 IT02517 IT02516 IT02518 IT0251 ta2909 MCH6614 TA-2909

    61271

    Abstract: 3LP02M
    Text: 3LP02M 注文コード No. N 6 1 2 7 A 三洋半導体データシート 半導体ニューズ No.N6127 とさしかえてください。 3LP02M P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。


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    PDF 3LP02M N6127 100mA 100mA, I00242 IT00247 IT00248 61271 3LP02M

    Untitled

    Abstract: No abstract text available
    Text: 3LP02M Ordering number : EN6127A P-Channel Silicon MOSFET 3LP02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions


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    PDF 3LP02M EN6127A

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN6554 P-Channel Silicon MOSFET 3LP02SP Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2180 [3LP02SP] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 3


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    PDF ENN6554 3LP02SP 3LP02SP]

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN6127 P-Channel Silicon MOSFET 3LP02M Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2158 0.3 0.2 0.425 [3LP02M] 0.15 3 0.425 2.1 1.250 0 to 0.1


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    PDF ENN6127 3LP02M 3LP02M]

    MCH6607

    Abstract: 70393
    Text: MCH6607 注文コード No. N 7 0 3 9 A 三洋半導体データシート 半導体ニューズ No.N7039 とさしかえてください。 MCH6607 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長


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    PDF MCH6607 N7039 900mm2 100mA 100mA, 900mm2 IT00248 IT00247 IT03641 MCH6607 70393

    Untitled

    Abstract: No abstract text available
    Text: MCH6615 Ordering number : EN6796A MCH6615 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting.


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    PDF MCH6615 EN6796A MCH6615

    Untitled

    Abstract: No abstract text available
    Text: 3LP02C Ordering number : EN6385A P-Channel Silicon MOSFET 3LP02C General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions


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    PDF 3LP02C EN6385A

    3LP02M

    Abstract: No abstract text available
    Text: 3LP02M Ordering number : EN6127A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3LP02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C


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    PDF 3LP02M EN6127A 3LP02M

    Untitled

    Abstract: No abstract text available
    Text: MCH6614 Ordering number : EN6795A MCH6614 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6614 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting.


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    PDF MCH6614 EN6795A MCH6614

    it-007

    Abstract: TA2007
    Text: Ordering number:ENN6385 P-Channel Silicon MOSFET 3LP02C Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2091A [3LP02C] 0.5 0.4 3 0.16 0.95 0.95 2 1.9 2.9 2.5 1 : Gate


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    PDF ENN6385 3LP02C 3LP02C] it-007 TA2007

    TA2010

    Abstract: No abstract text available
    Text: Ordering number:ENN6553 P-Channel Silicon MOSFET 3LP02N Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2178 [3LP02N] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5 0.44 14.0 0.45


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    PDF ENN6553 3LP02N 3LP02N] TA2010

    IT0251

    Abstract: MCH6615
    Text: Ordering number : ENN6796 MCH6615 N-Channel and P-Channel Silicon MOSFETs MCH6615 Ultrahigh-Speed Switching Applications • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs,


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    PDF ENN6796 MCH6615 MCH6615 MCH6615] IT0251

    MCH6614

    Abstract: TA-2909
    Text: MCH6614 Ordering number : EN6795A SANYO Semiconductors DATA SHEET MCH6614 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6614 incorporates two elements in the same package which are N-channel and P-channel low


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    PDF MCH6614 EN6795A MCH6614 TA-2909

    3LP02SP

    Abstract: TA-2009
    Text: 注文コード No. N 6 5 5 4 3LP02SP No. N 6 5 5 4 52200 新 3LP02SP 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・2.5V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


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    PDF 3LP02SP 100mA 100mA, IT00242 IT00241 IT00247 IT00248 3LP02SP TA-2009

    IT0251

    Abstract: MCH6615 TA2910
    Text: MCH6615 注文コード No. N 6 7 9 6 A 三洋半導体データシート 半導体ニューズ No.N6796 をさしかえてください。 MCH6615 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス


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    PDF MCH6615 N6796 900mm2 150mA 150mA, 10his 900mm2 IT02520 --10V IT0251 MCH6615 TA2910

    ta2010

    Abstract: TA-2010 3LP02N
    Text: 注文コード No. N 6 5 5 3 3LP02N No. N 6 5 5 3 52200 新 3LP02N 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・2.5V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


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    PDF 3LP02N 100mA 100mA, IT00242 IT00241 IT00247 IT00248 ta2010 TA-2010 3LP02N

    sanyo cp-020

    Abstract: TA2007 3LP02C N6385
    Text: 3LP02C 注文コード No. N 6 3 8 5 A 三洋半導体データシート 半導体ニューズ No.N6385 とさしかえてください。 3LP02C P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。


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    PDF 3LP02C N6385 100mA 100mA, IT00242 IT00241 IT00247 IT00248 sanyo cp-020 TA2007 3LP02C N6385