cp019
Abstract: CP019-1B ISSI 614 7306-11 86038-8
Text: ISSI REPRESENTATIVES Integrated Silicon Solution, Inc. ISSI Regional Sales Offices Headquarters 800-379-4774 Tel. 408-588-0806 Fax Northeast Office 603-594-4176 Tel. 603-594-4181 Fax Central Office 972-488-9691 Tel. 972-488-9690 Fax West Coast Office Europe Office
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BC723
Abstract: 56800E DSP56852UM 56800e OCMDR View Sonic lcd monitor power supply circuit diagram 56F800E reference manual 7914 freescale superflash
Text: 56852 User Manual 56852 Digitial Signal Controller 12 13 14 15 16 DSP56852UM Rev. 4 06/2005 freescale.com 17 18 This manual is one of a set of three documents. For complete product information, it is necessary to have all three documents. They are: 56800E Reference Manual, 56852 User Manual, and
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DSP56852UM
56800E
DSP56F852UM
BC723
DSP56852UM
56800e OCMDR
View Sonic lcd monitor power supply circuit diagram
56F800E reference manual
7914
freescale superflash
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JTAG 2mm
Abstract: 56800E CS4218 DSP56800E DSP56852 DSP56852EVMUM jack p4 2.1mm CR1243
Text: 56852 Evaluation Module User Manual 56F850 16-bit Digital Signal Controllers DSP56852EVMUM Rev. 3 07/2005 freescale.com TABLE OF CONTENTS Preface vii Chapter 1 Introduction 1.1 1.2 1.3 56852EVM Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-1
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56F850
16-bit
DSP56852EVMUM
56852EVM
DSP56827EVMUM
JTAG 2mm
56800E
CS4218
DSP56800E
DSP56852
DSP56852EVMUM
jack p4 2.1mm
CR1243
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IS31LT3380
Abstract: 31LT3380 100603-01 PAR/MR11
Text: IS31LT3380 40V/1.2A LED DRIVER WITH SWITCH DIMMING OCTOBER 2011 GENERAL DESCRIPTION The IS31LT3380 is a continuous mode inductive step-down converter, designed for driving a single LED or multiple series connected LEDs efficiently from a voltage source higher than the LED voltage. The chip operates
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IS31LT3380
IS31LT3380
31LT3380
100603-01
PAR/MR11
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PAR/MR11
Abstract: No abstract text available
Text: IS31LT3380 40V/1.2A LED DRIVER WITH SWITCH DIMMING OCTOBER 2011 GENERAL DESCRIPTION The IS31LT3380 is a continuous mode inductive step-down converter, designed for driving a single LED or multiple series connected LEDs efficiently from a voltage source higher than the LED voltage. The chip operates
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IS31LT3380
IS31LT3380
PAR/MR11
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PAR/MR11
Abstract: No abstract text available
Text: IS31LT3360 40V/1.2A LED DRIVER WITH INTERNAL SWITCH GENERAL DESCRIPTION The IS31LT3360 is a continuous mode inductive step-down converter, designed for driving a single LED or multiple series connected LEDs efficiently from a voltage source higher than the LED voltage. The chip operates
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IS31LT3360
IS31LT3360
OT89-5
PAR/MR11
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IS31LT3360
Abstract: PAR/MR11
Text: IS31LT3360 40V/1.2A LED DRIVER WITH INTERNAL SWITCH GENERAL DESCRIPTION The IS31LT3360 is a continuous mode inductive step-down converter, designed for driving a single LED or multiple series connected LEDs efficiently from a voltage source higher than the LED voltage. The chip operates
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IS31LT3360
IS31LT3360
OT89-5
PAR/MR11
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Untitled
Abstract: No abstract text available
Text: 5KP SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE 5.0 to 200 Volts PEAK PULSE POWER 5000 Watts P-600 Unit: inch mm FEATURES 1.0(25.4)MIN. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • 5000W Peak Pulse Power capability at on 10/1000µs waveform
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P-600
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Untitled
Abstract: No abstract text available
Text: IS39LV512 / IS39LV010 / IS39LV040 512 Kbit / 1Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V • Memory Organization - IS39LV512: 64K x 8 512 Kbit - IS39LV010: 128K x 8 (1 Mbit)
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IS39LV512
IS39LV010
IS39LV040
IS39LV512:
IS39LV010:
IS39LV040:
IS39LV512)
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IS39LV010
Abstract: A114 ESD IS39LV040
Text: IS39LV512 / IS39LV010 / IS39LV040 512 Kbit / 1Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V • Memory Organization - IS39LV512: 64K x 8 512 Kbit - IS39LV010: 128K x 8 (1 Mbit)
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IS39LV512:
IS39LV010:
IS39LV040:
IS39LV512)
208mil
150mil
11x13mm)
com22
IS39LV512
IS39LV010
A114 ESD
IS39LV040
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Untitled
Abstract: No abstract text available
Text: IS39LV512 / IS39LV010 / IS39LV040 512 Kbit / 1Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V • Memory Organization - IS39LV512: 64K x 8 512 Kbit - IS39LV010: 128K x 8 (1 Mbit)
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IS39LV512
IS39LV010
IS39LV040
IS39LV512:
IS39LV010:
IS39LV040:
IS39LV512)
208mil
150mil
11x13mm)
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Untitled
Abstract: No abstract text available
Text: IS39LV512 / IS39LV010 / IS39LV040 512 Kbit / 1Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V • Memory Organization - IS39LV512: 64K x 8 512 Kbit - IS39LV010: 128K x 8 (1 Mbit)
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IS39LV512
IS39LV010
IS39LV040
IS39LV512:
IS39LV010:
IS39LV040:
IS39LV512)
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a1718
Abstract: 128ET
Text: 56852 Data Sheet Technical Data 56800E 16-bit Digital Signal Controllers DSP56852 Rev. 7 06/2005 freescale.com DSP56852 General Description • 120 MIPS at 120MHz • Interrupt Controller • 6K x 16-bit Program SRAM • General Purpose 16-bit Quad Timer • 4K x 16-bit Data SRAM
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56800E
16-bit
DSP56852
120MHz
81-pin
a1718
128ET
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Untitled
Abstract: No abstract text available
Text: 2 2 issi W hat HEWLETT mL'Hm P a ck a rd Silicon Bipolar Monolithic Variable Gain Amplifier Technical Data HPVA-0180 Features • 3 dB Bandwidth: DC to 2.5 GHz • Temperature Compensated Bias • Single Ended or Differential Operation • Low Cost Plastic Surface
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HPVA-0180
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ISSI 543
Abstract: No abstract text available
Text: ISSI I S 2 7 H C 5 1 2 65,536 X 8 HIGH-SPEED CMOS EPROM FEATURES DESCRIPTION • Fast access time: 45 ns The IS S IIS27HC512 is an ultra-high-speed 512K-bit Ultravio let Erasable CMOS Programmable Read-Only Memory. It utilizes the standard JEDEC pinout making it functionally
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IIS27HC512
512K-bit
IS27C512,
IS27C512
IS27HC512-45WI
IS27HC512-45PLI
IS27HC512-45CWI
IS27HC512-45TI
600-mil
ISSI 543
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Untitled
Abstract: No abstract text available
Text: 64K x 32 SYNCHRONOUS PIPELINE STATIC RAM PRELIMINARY JUNE 1997 FEATURES DESCRIPTION • Internal self-timed write cycle The ISSIIS61S6432 is a high-speed, low-power synchronous static RAM designed to provide a burstable, high-perfor mance, secondary cache for the Pentium , 680X0™, and
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ISSIIS61S6432
680X0â
SR009-1C
300440M
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transistor bf 458
Abstract: transistor bf458 transistor bf 459
Text: 25C D • fl235b as 00044^5 T H S IE 6 ' rBF 457 BF 458 BF 459 NPN Silicon RF Transistors _"'-5C 0 4 4 9 5 SIE M E N S A K T IEN G ESE LLSC H A F for video and AF output stages BF 457, BF 4 58 and BF 4 5 9 are epitaxial NPN silicon planar transistors in TO 126 plastic
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fl235b
62702-F315
Q62702-F316
Q62702-F317
Q62902-B6
BF457
BF458
BF459
transistor bf 458
transistor bf458
transistor bf 459
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Untitled
Abstract: No abstract text available
Text: MODEL IMS-2 Inductors M ilitary, M IL-C-15305 Qualified, Type LT and Com m ercial, Molded, Shielded, M iniature FEATURES • Flame retardant coating • Electromagnetic shield Epoxy molded construction provides superior moisture protection • Small package for a
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IL-C-15305
MIL-C-15305
MIL-STD-202,
MS21426
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Untitled
Abstract: No abstract text available
Text: SA MS UNG E L E C T R O N I C S INC 42E D Bi 0011103 1 BSflGK PRELIMINARY KM23C16000FP CMOS MASK ROM 16M-Bit 2M X8/1M X16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time: 150ns (max.)
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KM23C16000FP
16M-Bit
150ns
64-pln
KM23C16000FP
KM23C16000FP)
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM23C32100FP CMOS MASK ROM 32M-BH 4M x 8/2 M x 16 CMOS M ASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 1 6 (word mode) • Fast access time Random access: 150ns (max.) Page access: 70ns (max.)
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KM23C32100FP
32M-BH
150ns
100mA
64-pin
KM23C32100FP
A3-A20
KM23C32100FP)
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8464a
Abstract: MB8464A-10-W heme LC mb8464a
Text: October 1989 Edition 1.0 F u jrrs u DATA SHEET MB8464A-10-w/-15-w CMOS 64K-BIT LOW POWER SRAM 8,192WORDS x 8BIT CMOS STATIC RAM WITH LOW POWER AND DATA RETENTION The Fujitsu MB8464A Is a 8 192-word by 8-bit static random access memory fabricated with a CMOS silicon gate process. The memory utilizes asynchronous circuitry and may be
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MB8464A-10-w/-15-w
64K-BIT
192WORDS
MB8464A
192-word
MB8464A-10-W
MB8464A-15-W
8464a
heme LC
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MB8464A-10
Abstract: fujitsu mb8464a MB8464A MB8464 fujitsu 1988 777T7
Text: FUJITSU MICROELECTRONICS 47E D 37^7^2 DDlöRHS T • F U I cP April 1990 Edition 3.0 FUJITSU DATA SHEET MB8464A-80/-80U-80LL/-10/-10U-1OLL/-15/- 15U-15LL CMOS 64K BIT LOW POWER SRAM 8K Words x 8 Bits CMOS Static RAM with Low Power and Data Retention The Fujitsu MB8464A is a 8,192 words x 8 bits static random access memory
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MB8464A-80/-80U-80LU-10/-
10U-10LU-15/-
MB8464A
D2I01IS-2C
374T7b2
MB8464A-80/80L/80LL
MB8464A-10/10L/10LL
MB8464A-15/15L/15LL
t-46-23-12
MB8464A-10
fujitsu mb8464a
MB8464
fujitsu 1988
777T7
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Untitled
Abstract: No abstract text available
Text: BENCHÏ1ARÛ niCROELEC bûE D 137001=] 0001547 150 « B E N bq4015/bq4015Y BENCHMARQ 512Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4015 is a nonvolatile 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The
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bq4015/bq4015Y
512Kx8
bq4015
304-bit
32-pin
bq4015MB
10-year
bq4015MA
bq4015MApart
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Untitled
Abstract: No abstract text available
Text: High Performance 32Kx9 CMOS SRAM II AS7C259 AS7C259L 32Kx9 CMOS SRAM Common I/O FEATURES Organization: 32,768 words x 9 bits • 2.0V data retention (L version) High speed • Equal access and cycle times - 12/15/20/25/35 ns address access tíme • Easy memory expansion with CE1, CE2, and OE inputs
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32Kx9
AS7C259
AS7C259L
32Kx9
32-pin
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