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    ISS-101 DIODE Search Results

    ISS-101 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    ISS-101 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S-80746AL

    Abstract: S-80751SL-EF-X dtx 370
    Text: Contents Features .1 Pin Assignment .1 Block


    Original     		PDF S-805 S-80746AL S-80751SL-EF-X dtx 370

    a7x transistor

    Abstract: TRANSISTOR 318 13003 S80742AL S805 S-80746AL S-805 S-807 Diode A4X S-808 S80727AN
    Text: Rev.2.0 * S-807 Series will be summarized into S-808 Series. S-807 Series HIGH-PRECISION VOLTAGE DETECTOR The S-807 Series is an adjustment-free high-precision voltage detector made using the CMOS process. The output voltage is fixed internally, with an accuracy of ±2.4%. Two output types are available, Nch opendrain and CMOS output active “H” and “L” , both of which have various


    Original     		PDF S-807 S-808 S-805 S-807XXSX OT-23-5 S807XXSX a7x transistor TRANSISTOR 318 13003 S80742AL S805 S-80746AL Diode A4X S80727AN

    S-807 Series

    Abstract: replacement transistor 13003 S-80746AL S-805 S-807 S-80716AN S-808 dtx 370 S-80722 S807XX
    Text: Contents Features .1 Pin Assignment .1 Block


    Original     		PDF S-805 S-807 Series replacement transistor 13003 S-80746AL S-807 S-80716AN S-808 dtx 370 S-80722 S807XX

    S-80746AL

    Abstract: S-805 S-807 S-80716AN S-808 transistor 3904 TO-92
    Text: Contents Features. 1 Applications . 1 Pin Assignment. 1 Block Diagram . 2


    Original     		PDF S-805 S-807 S-807xxAN S-807xxAN S-807 11S807001 S-80746AL S-80716AN S-808 transistor 3904 TO-92

    replacement transistor 13003

    Abstract: S-805 S-807 S-80716AN S-808 S-80745 S807XX S-80740AH-B4-X 80747 S-80730
    Text: Contents Features. 1 Applications . 1 Pin Assignment. 1 Block Diagram . 2


    Original     		PDF S-805 S-807 replacement transistor 13003 S-80716AN S-808 S-80745 S807XX S-80740AH-B4-X 80747 S-80730

    BSC014N04LSI

    Abstract: BSC014N04
    Text: BSC014N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.45 mW ID 100 A QOSS


    Original     		PDF BSC014N04LSI IEC61249-2-21 014N04LI BSC014N04LSI BSC014N04

    BSC014N04LSI

    Abstract: bsc014n04 BSC014N04LS
    Text: BSC014N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.45 mW ID 100 A QOSS


    Original     		PDF BSC014N04LSI IEC61249-2-21 014N04LI BSC014N04LSI bsc014n04 BSC014N04LS

    Untitled

    Abstract: No abstract text available
    Text: BSC010N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.05 mW ID 100 A QOSS


    Original     		PDF BSC010N04LSI IEC61249-2-21 010N04LI

    DIODE DS12

    Abstract: No abstract text available
    Text: BSN011NE2LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 25 V RDS(on),max 1.1


    Original     		PDF BSN011NE2LSI IEC61249-2-21 011NE2I DIODE DS12

    0901NSI

    Abstract: BSC0901NSI IEC61249-2-21
    Text: BSC0901NSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized SyncFET for high performance buck converter • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 30 V RDS(on),max


    Original     		PDF BSC0901NSI IEC61249-2-21 0901NSI 0901NSI BSC0901NSI IEC61249-2-21

    Untitled

    Abstract: No abstract text available
    Text: BSN011NE2LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 25 V RDS(on),max 1.1


    Original     		PDF BSN011NE2LSI IEC61249-2-21 011NE2I

    Untitled

    Abstract: No abstract text available
    Text: BSC0902NSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized SyncFET for high performance buck converter • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 30 V RDS(on),max


    Original     		PDF BSC0902NSI IEC61249-2-21 0902NSI

    PG-TSDSON-8

    Abstract: No abstract text available
    Text: BSZ0904NSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized SyncFET for high performance buck converter • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 30 V RDS(on),max


    Original     		PDF BSZ0904NSI IEC61249-2-21 0904NSI PG-TSDSON-8

    Untitled

    Abstract: No abstract text available
    Text: BSZ0902NSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized SyncFET for high performance buck converter • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 30 V RDS(on),max


    Original     		PDF BSZ0902NSI IEC61249-2-21 0902NSI

    018NE2LI

    Abstract: No abstract text available
    Text: BSC018NE2LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 25 V RDS(on),max 1.8


    Original     		PDF BSC018NE2LSI IEC61249-2-21 018NE2LI 018NE2LI

    Untitled

    Abstract: No abstract text available
    Text: BSZ0901NSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized SyncFET for high performance buck converter • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 30 V RDS(on),max


    Original     		PDF BSZ0901NSI IEC61249-2-21 0901NSI

    Untitled

    Abstract: No abstract text available
    Text: BSC014N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.45 mW ID 100 A QOSS


    Original     		PDF BSC014N04LSI IEC61249-2-21 014N04LI

    BSC010N04LSI

    Abstract: No abstract text available
    Text: BSC010N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.05 mW ID 100 A QOSS


    Original     		PDF BSC010N04LSI IEC61249-2-21 010N04LI BSC010N04LSI

    Untitled

    Abstract: No abstract text available
    Text: BSC014N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.45 mW ID 100 A QOSS


    Original     		PDF BSC014N04LSI IEC61249-2-21 014N04LI

    Untitled

    Abstract: No abstract text available
    Text: BSZ018NE2LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 25 V RDS(on),max 1.8


    Original     		PDF BSZ018NE2LSI IEC61249-2-21 018NE2I

    Untitled

    Abstract: No abstract text available
    Text: BSC011N03LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance SMPS • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 30 V RDS(on),max 1.1 mW ID 100


    Original     		PDF BSC011N03LSI IEC61249-2-21 011N03LI

    YG802C09

    Abstract: YG802N09 A448 yg802c
    Text: YG802C N 09( ioa) SCHOTTKY B A RRIER DIODE : Features Insulated package by fully m olding. • teV F Low VF • T .A 'V + V 'f C o n n e c tio n D ia g ra m Super high speed switching. • f a it Y G 802C 09 High reliability by planer design.’ {¿)Q PI 1


    OCR Scan     		PDF YG802C SC-67 YG802C09 YG802N09 500ns, YG802C09 YG802N09 A448

    LS303

    Abstract: BUP 303 bup203
    Text: SIEMENS IGBT Transistors N channel MOS input voltage-controlled Low forward voltage drop High switching speed Very low tail current Low temperature sensitivity Avalanche-rated Latch-up-free Suitable free wheeling diode BYP 101 G E Type ^CE BUP 203 1000 V


    OCR Scan     		PDF

    TRANSISTOR JC

    Abstract: 748 transistor on transistor 304 transistor 307 bup304 bup transistor bup 200 transistor
    Text: SIEMENS IGBT Transistors • • • • • • • • • BUP 304 N channel MOS input voltage-controlled Low forward voltage drop High switching speed Very low tail current Low temperature sensitivity Avalanche-rated Latch-up-free Suitable free wheeling diode


    OCR Scan     		PDF O-218 C67078-A4200-A2 C67078-A4201-A2 TRANSISTOR JC 748 transistor on transistor 304 transistor 307 bup304 bup transistor bup 200 transistor