IRF7309
Abstract: AN-994
Text: Previous Datasheet Index Next Data Sheet PD - 9.1243B IRF7309 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 G1 S2
|
Original
|
1243B
IRF7309
IRF7309
AN-994
|
PDF
|
IRF7306
Abstract: AN-994
Text: Previous Datasheet Index Next Data Sheet PD - 9.1241B IRF7306 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 G1 S2 G2 1 8
|
Original
|
1241B
IRF7306
IRF7306
AN-994
|
PDF
|
FL014
Abstract: FL014 Example EIA-541 IRFL014 IRFL4105
Text: Previous Datasheet Index Next Data Sheet PD 9.1381 IRFL4105 PRELIMINARY HEXFET Power MOSFET Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.045 Ω ID = 3.7A
|
Original
|
IRFL4105
OT-223
FL014
FL014 Example
EIA-541
IRFL014
IRFL4105
|
PDF
|
IRF9952
Abstract: IRF7319 IRF7309 IRF7509 Ultra Low Gate Charge
Text: Previous Datasheet Index Next Data Sheet PD - 9.1561 IRF9952 PRELIMINARY HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated
|
Original
|
IRF9952
IRF7309
IRF7319
IRF7509
IRF9952
IRF7319
IRF7509
Ultra Low Gate Charge
|
PDF
|
AN-994
Abstract: IRF520N IRFR120 IRFR120N IRFU120N
Text: Previous Datasheet Index Next Data Sheet PD - 9.1365 IRFR/U120N PRELIMINARY HEXFET Power MOSFET Surface Mount IRFR120N Straight Lead (IRFU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = 100V RDS(on) = 0.21Ω ID = 9.1A Description
|
Original
|
IRFR/U120N
IRFR120N)
IRFU120N)
AN-994
IRF520N
IRFR120
IRFR120N
IRFU120N
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information SDH/SONET 2.5Gb/s Laser Diode Driver VSC7927 Features • Rise Times Less Than 100ps • Direct Access to Modulation and Bias FET’s • High Speed Operation Up to 2.5 Gb/s NRZ Data • Data Density Monitors
|
Original
|
VSC7927
100ps
VSC7927
G52201-0,
|
PDF
|
LSE B6 transformer
Abstract: IRFM260
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1388A IRFM260 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL Ω , HEXFET 200Volt, 0.060Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very
|
Original
|
IRFM260
200Volt,
LSE B6 transformer
IRFM260
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TDA7541 AM/FM car-radio tuner IC with stereo decoder and intelligent selectivity system Features • FM part – AGC generation by RF and IF detection – I/Q mixer for 1st IF 10.7 MHz with image rejection – Mixer for 2nd IF 450 kHz – Internal 450 kHz band pass filter with
|
Original
|
TDA7541
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TDA7541 AM/FM car-radio tuner IC with stereo decoder and intelligent selectivity system Features • FM part – AGC generation by RF and IF detection – I/Q mixer for 1st IF 10.7 MHz with image rejection – Mixer for 2nd IF 450 kHz – Internal 450 kHz band pass filter with
|
Original
|
TDA7541
|
PDF
|
v810 diode
Abstract: TDA7541W LQFP64 TDA7541 TDA7541TR TDA7541WTR SL1014
Text: TDA7541 AM/FM car-radio tuner IC with stereo decoder and intelligent selectivity system Features • FM part – AGC generation by RF and IF detection – I/Q mixer for 1st IF 10.7 MHz with image rejection – Mixer for 2nd IF 450 kHz – Internal 450 kHz band pass filter with
|
Original
|
TDA7541
v810 diode
TDA7541W
LQFP64
TDA7541
TDA7541TR
TDA7541WTR
SL1014
|
PDF
|
FDB2614
Abstract: No abstract text available
Text: FDB2614 tm 200V N-Channel PowerTrench MOSFET General Description Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
|
Original
|
FDB2614
FDB2614
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FDP2614 tm 200V N-Channel PowerTrench MOSFET General Description Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
|
Original
|
FDP2614
O-220
FDP2614
|
PDF
|
FDP2614
Abstract: No abstract text available
Text: FDP2614 tm 200V N-Channel PowerTrench MOSFET General Description Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
|
Original
|
FDP2614
O-220
FDP2614
|
PDF
|
IRFL014
Abstract: IRLL3303 21 SMD transformer
Text: Previous Datasheet Index Next Data Sheet PD - 9.1379A IRLL3303 PRELIMINARY HEXFET Power MOSFET Surface Mount Dynamic dv/dt Rating l Logic-Level Gate Drive l Fast Switching l Ease of Paralleling l Advanced Process Technology l Ultra Low On-Resistance Description
|
Original
|
IRLL3303
IRFL014
IRLL3303
21 SMD transformer
|
PDF
|
|
|
FDP2614
Abstract: No abstract text available
Text: FDP2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining
|
Original
|
FDP2614
FDP2614
O-220
|
PDF
|
D2PAK
Abstract: No abstract text available
Text: FDB2614 tm N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features Description • RDS on = 22.9 mΩ ( Typ.) @ VGS = 10 V, ID = 31 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining
|
Original
|
FDB2614
FDB2614
O-263)
D2PAK
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFK 34N80 IXFX 34N80 VDSS ID25 RDS on Single MOSFET Die = 800 V = 34 A = 0.24 W trr £ 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
|
Original
|
O-264
34N80
34N80
247TM
|
PDF
|
AN4151
Abstract: Full-bridge LLC resonant converter AN-4151 LLC resonant converter transformer sectional bobbin LLC EER3542 core LLC resonant transformer FSFR2100 LLC resonant transformer LP Steigerwald A Comparison of Half Bridge Resonant
Text: www.fairchildsemi.com Application Note AN-4151 Half-bridge LLC Resonant Converter Design Using FSFR-series Fairchild Power Switch FPS Introduction The effort to obtain ever-increasing power density of switched-mode power supplies has been limited by the size
|
Original
|
AN-4151
AN4151
Full-bridge LLC resonant converter
AN-4151
LLC resonant converter transformer
sectional bobbin LLC
EER3542 core
LLC resonant transformer
FSFR2100
LLC resonant transformer LP
Steigerwald A Comparison of Half Bridge Resonant
|
PDF
|
Fairchild Semiconductor DS-513
Abstract: No abstract text available
Text: FDP2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining
|
Original
|
FDP2614
O-220
Fairchild Semiconductor DS-513
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FDB2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining
|
Original
|
FDB2614
|
PDF
|
v810 diode
Abstract: lg led tv electronic diagram Tv tuner Diagram LG RF circuit diagram of quality FM TRANSMITTER power ic of lg car stereo TDA7541W block diagram fm transmitter FM TRANSMITTER CIRCUIT DIAGRAM m0340 stereo preamplifier 16 pin ic
Text: TDA7541 AM/FM car radio tuner IC with stereo decoder and intelligent selectivity system Features • FM part – AGC generation by RF and IF detection – I/Q mixer for 1st IF 10.7MHz with image rejection – Mixer for 2nd IF 450kHz – Internal 450kHz band pass filter with
|
Original
|
TDA7541
450kHz
450kHz
v810 diode
lg led tv electronic diagram
Tv tuner Diagram LG RF
circuit diagram of quality FM TRANSMITTER
power ic of lg car stereo
TDA7541W
block diagram fm transmitter
FM TRANSMITTER CIRCUIT DIAGRAM
m0340
stereo preamplifier 16 pin ic
|
PDF
|
BV-1 501
Abstract: BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01
Text: linear.txt SPICE MODELS - LINEAR Technology Corp. LTC1150 * Version 2.0 Copyright Linear Technology Corp. 10/19/05. All rights reserved. * .SUBCKT LTC1150 3 2 7 4 6 ; +IN -IN V+ V- OUT * INPUT IB1 2 7 -10P IB2 3 7 10P RD1 4 80 2122.1 RD2 4 90 2122.1 M1 80 2 12 12 PM1
|
Original
|
LTC1150
LTC1150
5e-12
5e-11
2857E-11
65e-11
7124E-04
3e-11
9605e-8
74902E-10
BV-1 501
BF-960 spice model
LT1715 spice model
Transistor TT 2246
cd 6283 ic
transistor KF 507
LT1716 spice model
COMP1016
lt6234 spice model
AUO-11307 R01
|
PDF
|
SSH6N90A
Abstract: SSH6N90
Text: SSH6N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 2.3 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 25 µA (Max.) @ VDS = 900V
|
Original
|
SSH6N90A
SSH6N90A
SSH6N90
|
PDF
|
SSF6N90A
Abstract: No abstract text available
Text: SSF6N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 2.3 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current : 25 µA (Max.) @ VDS = 900V
|
Original
|
SSF6N90A
SSF6N90A
|
PDF
|
