Untitled
Abstract: No abstract text available
Text: MOSFET Transistors IC SMD Type Product specification 2SK3900 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 10 mÙ MAX. (VGS = 4.5 V, ID = 41 A) Low C iss: C iss =3500 pF TYP. +0.2 2.54-0.2
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2SK3900
O-263
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smd transistor ISS
Abstract: 2SK3900
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3900 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 10 mÙ MAX. (VGS = 4.5 V, ID = 41 A) Low C iss: C iss =3500 pF TYP. +0.2 2.54-0.2 +0.2
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2SK3900
O-263
smd transistor ISS
2SK3900
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smd transistor ISS
Abstract: mosfet 20v 30A 2SK3901 SMD Transistor MU
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3901 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low On-state resistance 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low C iss: C iss =1950 pF TYP. +0.2 2.54-0.2 +0.2 15.25-0.2 RDS on 2 = 16.5 mÙ MAX. (VGS = 4.5 V, ID = 30A)
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2SK3901
O-263
smd transistor ISS
mosfet 20v 30A
2SK3901
SMD Transistor MU
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smd transistor ISS
Abstract: smd transistor 26 2SK3902 TRANSISTOR SMD 15a 30A90
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3902 TO-263 +0.1 1.27-0.1 Features Low On-state resistance Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low C iss: C iss =1200 pF TYP. +0.1 0.81-0.1 2.54
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2SK3902
O-263
smd transistor ISS
smd transistor 26
2SK3902
TRANSISTOR SMD 15a
30A90
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Untitled
Abstract: No abstract text available
Text: Transistors MOSFET IC SMD Type Product specification 2SK3902 TO-263 +0.1 1.27-0.1 Features Low On-state resistance Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low C iss: C iss =1200 pF TYP. +0.1 0.81-0.1
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2SK3902
O-263
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SK3899 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 2.54-0.2
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2SK3899
O-263
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smd transistor ISS
Abstract: 2SK3899 2SK38
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3899 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 2.54-0.2 +0.2
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2SK3899
O-263
smd transistor ISS
2SK3899
2SK38
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Stag P301
Abstract: Stag Programmer P301 p301 stag manual p301 stag user manual p301 stag P301 graphical LCD screen 20 pin with sound ic moving message display
Text: Operating Manual for the P301 Programmer Stag International Ltd Silver Court, Watchmead Welwyn Garden City Hertfordshire AL7 1LT United Kingdom Tel: +44 1707 332148 Fax: +44 1707 371503 sales@stag.co.uk www.stag.co.uk Stag International Ltd. 2002 803 1171 Iss. 4
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727A
Abstract: dpcm band width dpcm Pulse Code Modulation XC4000 V150BG352-4
Text: 32-Channel Duplex ADPCM Transcoder for Virtex FPGAs Digital signal processing without the complicated DSP chip— that's the power of Xilinx DSP solutions in Virtex FPGAs. by David Mann, Marketing Communications, Integrated Silicon Systems Ltd, dmann@iss-dsp.com
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32-Channel
V150BG352-4
727A
dpcm band width
dpcm
Pulse Code Modulation
XC4000
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irf360lc
Abstract: ID 9302 IRFP360LC IRFPE30
Text: PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.20 Ω
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IRFP360LC
IRFPE30
irf360lc
ID 9302
IRFP360LC
IRFPE30
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Untitled
Abstract: No abstract text available
Text: PD - 9.1229 IRFP350LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.30 Ω
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IRFP350LC
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 500V RDS on = 0.27 Ω
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IRFP460LC
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD - 9.1234 IRFPC60LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 600V RDS on = 0.40 Ω
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IRFPC60LC
08-Mar-07
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IRF450L
Abstract: No abstract text available
Text: PD - 9.1231 IRFP450LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 500V RDS on = 0.40 Ω
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IRFP450LC
08-Mar-07
IRF450L
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irf460lc
Abstract: IRFP460LC IRFPE30 irf46
Text: PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 500V RDS on = 0.27 Ω
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IRFP460LC
IRFPE30
irf460lc
IRFP460LC
IRFPE30
irf46
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mosfet 600V 16A
Abstract: IRFPC60LC IRFPE30
Text: PD - 9.1234 IRFPC60LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 600V RDS on = 0.40 Ω
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IRFPC60LC
IRFPE30
mosfet 600V 16A
IRFPC60LC
IRFPE30
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IRF360LC
Abstract: No abstract text available
Text: PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.20 Ω
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IRFP360LC
08-Mar-07
IRF360LC
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Untitled
Abstract: No abstract text available
Text: PD - 9.1233 IRFPC50LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 600V RDS on = 0.60 Ω
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IRFPC50LC
08-Mar-07
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IRF350LC
Abstract: IRFP350LC IRFPE30
Text: PD - 9.1229 IRFP350LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.30 Ω
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IRFP350LC
IRFPE30
IRF350LC
IRFP350LC
IRFPE30
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PF0002
Abstract: 15m0
Text: ISS 11 DATE ISS CHANGE ' CN11808 CHANGE DATE ISS. Jl/o/w CHANGE DATE THIRD ANGLE PROJECTION DO NOT SCALE DRAWING 1 36.00 CRS FIXING DETAIL O o CNÌiï < W T List No. DIM A P F 0002/28 27.0 P F 00 02 /4 8 26.5 PF 0002/63 27.6 : fglBULGIN Lhm J BULON COhPOrCNTS PLC.
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CN11808
0002/T
BS4491
103MQ
PF0002
15m0
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Untitled
Abstract: No abstract text available
Text: 1 I 2 I 3 I 4 I 5 I 6 I 7 I 8 R E V IS IO N S ISS ZONE DES0 RlRTIC JN \PER REO U EST\D ATE REF, 5-01.3 J T U - 5 .0 8 - J RGB MOUNTING HOLE ISS: 7.5 -CONNECTOR ACCORDING TO: NRC 9 3 - 5 7 0 , DIN 4 7 - 2 95, CEI1 6 9 - 1 3 , UT EC 9 3 - 5 7 0 D IM E N S IO N S A R E IN M IL L IM E T E R 5
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1566252AF-ER1
5B-335-RTIC
5B-335-05L,
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Untitled
Abstract: No abstract text available
Text: ISS REVISIONS DESCRIPTION\DATE - in ’S CO « 12.7 APRD: CHKD: TITLE: INSULATED BNC JACK DR: RS Stock No. 5265915 DRAWING NO: UNLESS OTHERWISE SPECIFIED TOLERANCES 0.5-6 = ±0.2 >6-3 0 - ±0.4 >30-120 - ±0.6 >120-315 = ±1 >315-1000 = ±1.6
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KA/2005/62254
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TIP-29C
Abstract: UP10-T0127-2CB
Text: UP Dual Mount Series UP-T0127-2CB w/ 2 TIP-29C (T0-220) T R A N SIST O R S D E S C R IP T IO N OF CURVES A. N.C. O n ly B. N.C. W ith H oriz. D e vice M o u n t e d to G-10. H o riz. & Vert. D issip a to r. C. 2 0 0 F P M w / D iss. D. 5 0 0 F P M w / D iss.
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UP-T0127-2CB
TIP-29C
T0-220)
09part
e28Pf
UP10-000-CB
P10-000-B
UP10-000
UP10-T0127-2U
UP10-T0127-2CB
TIP-29C
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Untitled
Abstract: No abstract text available
Text: ADV MICRO PLA /PLE/A RRAY S PRELIM IN ARY b4E » □ SS752b □Ü337flcl ISS IAMDS IND: -25 PALLV22V10Z-25 Low-Voltage, Zero-Power 24-Pin EE CMOS Versatile PAL Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Low-voltage operation, 3.3 V JEDEC
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SS752b
337flc
PALLV22V10Z-25
24-Pin
7661A-17
PALLV22V1OZ-25
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