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    ISM MOSFET 10W Search Results

    ISM MOSFET 10W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    ISM MOSFET 10W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    800w rf power amplifier circuit diagram

    Abstract: MRF6VP11KH 1000w power amplifier circuit diagram 200W PUSH-PULL 1000w power AMPLIFIER pcb circuit amplifier circuit diagram class D 1000w 500w FM power amplifier circuit diagram MRFE6VP6300H RF Amplifier 500w 175 mhz 1000w class d circuit diagram schematics
    Text: White Paper 50V RF LDMOS An ideal RF Power technology for ISM, broadcast and commercial aerospace applications Freescale Semiconductor www.freescale.com/rfpower I. INTRODUCTION RF LDMOS RF Laterally Diffused MOS , hereafter referred to as LDMOS, is the dominant device technology used in


    Original     		PDF 1990s. 2010are 50VRFLDMOSWP 800w rf power amplifier circuit diagram MRF6VP11KH 1000w power amplifier circuit diagram 200W PUSH-PULL 1000w power AMPLIFIER pcb circuit amplifier circuit diagram class D 1000w 500w FM power amplifier circuit diagram MRFE6VP6300H RF Amplifier 500w 175 mhz 1000w class d circuit diagram schematics

    c25 diode to220

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 500 V with Industry-Best trr of 63 ns I INNOVAT AND TEC O L OGY SiHF8N50L-E3 N HN POWER MOSFETs O 19 62-2012 High-Voltage MOSFET 500 V Low-trr in TO-220 FULLPAK Package KEY BENEFITS • Low trr = 63 ns


    Original     		PDF SiHF8N50L-E3 O-220 07-Sep-09 VMN-PT0198-1208 c25 diode to220

    6x marking sot-23 p-channel

    Abstract: mosfet ir 840 SOT-23 C015
    Text: PD- 91848B IRLMS6802 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D A D 1 6 2 5 D 3 4 S VDSS = -20V D G RDS on = 0.050W Top View Description These P-Channel MOSFETs from International Rectifier


    Original     		PDF 91848B IRLMS6802 OT-23. 6x marking sot-23 p-channel mosfet ir 840 SOT-23 C015

    Untitled

    Abstract: No abstract text available
    Text: SP8M70 Dual N & Pch Power MOSFET Datasheet lOutline Symbol Tr1: Nch Tr2: Pch VDSS 250V -250V RDS on (Max.) 1.63W ID 3.0A PD (8) SOP8 (7) (6) (5) 2.8W (1) (2) -2.5A (3) (4) 2.0W lFeatures lInner circuit 1) Low on-resistance. (1) (2) (3) (4) 2) Fast switching speed.


    Original     		PDF SP8M70 -250V R1102A

    Connector WPC

    Abstract: No abstract text available
    Text: User's Guide SLVU824A – January 2013 – Revised January 2013 bq500211A bqTESLA Wireless Power TX EVM The bqTESLA wireless power transmitter evaluation module from Texas Instruments is a highperformance, easy-to-use development module for the design of wireless power solutions. The singlechannel transmitter enables designers to speed the development of their end-applications. The


    Original     		PDF SLVU824A bq500211A bq51013AEVM-764 Connector WPC

    BQ500211

    Abstract: lg led tv electronic diagram
    Text: User's Guide SLVU536A – June 2012 – Revised October 2012 bq500211 bqTESLA Wireless Power TX EVM The bqTESLA wireless power transmitter evaluation module from Texas Instruments is a highperformance, easy-to-use development module for the design of wireless power solutions. The singlechannel transmitter enables designers to speed the development of their end-applications. The


    Original     		PDF SLVU536A bq500211 bq500211EVM bq51013AEVM-764 bq500211EVM-045 lg led tv electronic diagram

    6 pin TRANSISTOR SMD CODE CAA

    Abstract: TEA6721 BF991 spice model
    Text: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、


    Original     		PDF

    TXL12RFP01

    Abstract: No abstract text available
    Text: User's Guide SLVU688A – October 2012 – Revised December 2012 bq500410A bqTESLA Wireless Power Transmitter EVM The bq500410AEVM-085 EVM wireless power transmitter evaluation module from Texas Instrument is a high-performance, easy-to-use development tool for wireless power solutions. The transmitter module is a


    Original     		PDF SLVU688A bq500410A bq500410AEVM-085 bq51013AEVM-764 TXL12RFP01

    BA 7891 NG

    Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
    Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进


    Original     		PDF PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104

    Tektronix 2712

    Abstract: 0805C104KAT2A
    Text: Application Note 1817 November 2012 13.56 MHz, Class-D Half Bridge, RF Generator with DRF1400 Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 gchoi@microsemi.com INTRODUCTION The DRF1400 is a MOSFET Half Bridge HB Hybrid Device which has been optimized for efficiency and reduced


    Original     		PDF DRF1400 DRF1400 LMR400 DRF1300 Tektronix 2712 0805C104KAT2A

    RE1L002SN

    Abstract: No abstract text available
    Text: RE1L002SN Datasheet Nch 60V 250mA Small Signal MOSFET lOutline VDSS 60V RDS on (Max.) 2.4W ID 250mA PD 150mW lFeatures (3) EMT3F (1) (2) lInner circuit 1) Low voltage drive(2.5V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.


    Original     		PDF RE1L002SN 250mA 150mW R1120A RE1L002SN

    Untitled

    Abstract: No abstract text available
    Text: RE1L002SN Nch 60V 250mA Small Signal MOSFET Datasheet lOutline VDSS 60V RDS on (Max.) 2.4W ID 250mA PD 150mW lFeatures (3) EMT3F (1) (2) lInner circuit 1) Low voltage drive(2.5V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.


    Original     		PDF RE1L002SN 250mA 250mA 150mW R1120A

    RE1L002

    Abstract: RE1L002SN
    Text: RE1L002SN RE1L002SN Datasheet Nch 60V 250mA Small Signal MOSFET lOutline VDSS 60V RDS on (Max.) 2.4W ID 250mA PD 150mW lFeatures (3) EMT3F (1) (2) lInner circuit 1) Low voltage drive(2.5V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.


    Original     		PDF RE1L002SN 250mA 150mW R1120A RE1L002 RE1L002SN

    300 to 50 Ohm RF transformer

    Abstract: MHz-150W resistor 680 ohm
    Text: SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original     		PDF SD2931-10 SD2931-10 SD2931 300 to 50 Ohm RF transformer MHz-150W resistor 680 ohm

    RF POWER TRANSISTOR

    Abstract: arco capacitors choke vk200 SD2931 SD2931-10 VK200
    Text: SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original     		PDF SD2931-10 SD2931-10 SD2931 SD2931 RF POWER TRANSISTOR arco capacitors choke vk200 VK200

    resistor 680 ohm

    Abstract: Power Transformer EE-19 SD2931-10 EE-19 transformer SD2931 VK200 rf transformer 50 ohm to 0.1 ohm SCHEMATIC POWER SUPPLY WITH mosfet
    Text: SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original     		PDF SD2931-10 SD2931-10 SD2931 SD2931 resistor 680 ohm Power Transformer EE-19 EE-19 transformer VK200 rf transformer 50 ohm to 0.1 ohm SCHEMATIC POWER SUPPLY WITH mosfet

    Power Transformer EE-19

    Abstract: resistor 680 ohm EE-19 transformer SD2931-10 vk200 rf choke SD2931 VK200
    Text: SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original     		PDF SD2931-10 SD2931-10 SD2931 SD2931 Power Transformer EE-19 resistor 680 ohm EE-19 transformer vk200 rf choke VK200

    resistor 680 ohm

    Abstract: SD2931
    Text: SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original     		PDF SD2931-10 SD2931-10 SD2931 resistor 680 ohm

    Untitled

    Abstract: No abstract text available
    Text: ZDX130N50 Datasheet Nch 500V 13A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.52W ID -13A PD 40W TO-220FM (3) (2) (1) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		PDF ZDX130N50 O-220FM R1120A

    ZDX130

    Abstract: No abstract text available
    Text: ZDX130N50 Nch 500V 13A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.52W ID -13A PD 40W TO-220FM (3) (2) (1) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		PDF ZDX130N50 O-220FM R1120A ZDX130

    Untitled

    Abstract: No abstract text available
    Text: ZDX050N50 Nch 500V 5A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 1.5W ID 5A PD 40W TO-220FM (3) (2) (1) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		PDF ZDX050N50 O-220FM ZDX050N50 R1120A

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power MOSFET S FEATURES • ■ ■ ■ ■ ■ ■ S H 2 5 N 4 0 A BV0SS = 400 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 uA Max @ Vos*400V


    OCR Scan     		PDF SSH25BH0A 300nF SSH25N40A

    Untitled

    Abstract: No abstract text available
    Text: IR F M 2 1 4 A Advanced Power MOSFET FEATURES BVdss = 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 jjA M a x. @ VDS= 250V


    OCR Scan     		PDF OT-223 RFM214A IRFM214A

    1740Q

    Abstract: No abstract text available
    Text: CPClare ITC117P Application Note CORPORATION ITC117P Application Note CP C lare’s Integrated Telecom Circuit ITC117P features com bined circuitry in one 16-Pin SOIC package for: • 1 Form A S o lid S ta te R e lay fo r use as Hookswitch ■ Bridge Rectifier


    OCR Scan     		PDF ITC117P ITC117P) 16-Pin LOC110 1740Q