HUF75637SMD05
Abstract: HUF75637SMD05R SMD05
Text: HUF75637SMD05R HUF75637SMD05R MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS 7 .5 4 (0 .2 9 6 ) 0 .7 6 (0 .0 3 0 ) m in . 2 .4 1 (0 .0 9 5 ) 3 .1 7 5 (0 .1 2 5 ) M a x . 2 .4 1 (0 .0 9 5 ) 3 .0 5 (0 .1 2 0 ) 0 .1 2 7 (0 .0 0 5 )
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HUF75637SMD05R
SMD05
HUF75637SMD05
44Adisd
00A/ms
250mA
HUF75637SMD05
HUF75637SMD05R
SMD05
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HUF75637SMD05
Abstract: HUF75637SMD05R SMD05
Text: HUF75637SMD05R HUF75637SMD05R MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS 7 .5 4 (0 .2 9 6 ) 0 .7 6 (0 .0 3 0 ) m in . 2 .4 1 (0 .0 9 5 ) 3 .1 7 5 (0 .1 2 5 ) M a x . 2 .4 1 (0 .0 9 5 ) 3 .0 5 (0 .1 2 0 ) 0 .1 2 7 (0 .0 0 5 )
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HUF75637SMD05R
SMD05
O-276AA)
HUF75637SMD05
HUF75637SMD05
HUF75637SMD05R
SMD05
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STW3N170
Abstract: stfw3n170 N-channel MOSFET to-247
Text: STFW3N170, STW3N170 N-channel 1700 V, 8 Ω typ., 2.3 A, PowerMESH Power MOSFET in TO-3FP and TO-247 packages Datasheet − preliminary data Features VDSS RDS on max ID 1700 V 12 Ω 2.3 A Order codes STFW3N170 STW3N170 1 3 2 • Intrinsic capacitances and Qg minimized
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STFW3N170,
STW3N170
O-247
STFW3N170
O-247
STW3N170
N-channel MOSFET to-247
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Untitled
Abstract: No abstract text available
Text: APTMC170AM60CT1AG VDSS = 1700V RDSon = 60mΩ max @ Tj = 25°C ID = 53A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET
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APTMC170AM60CT1AG
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100A 1000V mosfet
Abstract: No abstract text available
Text: APTMC170AM30CT1AG VDSS = 1700V RDSon = 30mΩ max @ Tj = 25°C ID = 106A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET
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APTMC170AM30CT1AG
100A 1000V mosfet
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STB55NF06L
Abstract: No abstract text available
Text: STP16NF06L N-CHANNEL 60V - 0.014 Ω - 55A D2PAK STripFET II POWER MOSFET TYPE STB55NF06L • ■ ■ ■ VDSS RDS on ID 60 V <0.018 Ω 55 A TYPICAL RDS(on) = 0.014 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION
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STP16NF06L
STB55NF06L
STB55NF06L
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smps 24v 10a
Abstract: DIODE 76A 24V 10A SMPS 035H IRFPE30 MJ6000
Text: PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l Lead-Free VDSS RDS on max ID 30V 0.0028Ω 210A Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated
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IRFP3703PbF
O-247AC
smps 24v 10a
DIODE 76A
24V 10A SMPS
035H
IRFPE30
MJ6000
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Untitled
Abstract: No abstract text available
Text: PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l Lead-Free VDSS RDS on max ID 30V 0.0028Ω 210A Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated
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IRFP3703PbF
O-247AC
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24V 10A SMPS
Abstract: DIODE 76A IRFP3703PbF 035H IRFPE30 SMPS 24V irfp3703
Text: PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l Lead-Free VDSS RDS on max ID 30V 0.0028Ω 210A Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated
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IRFP3703PbF
O-247AC
24V 10A SMPS
DIODE 76A
IRFP3703PbF
035H
IRFPE30
SMPS 24V
irfp3703
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24V 10A SMPS
Abstract: IRFBL3703 DIODE 76A ISD76A
Text: PD - 93841 IRFBL3703 SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification in High Power High Frequency DC/DC Converters VDSS RDS on max ID 30V 0.0025Ω 260A Benefits >1mm lower profile than D2Pak Same footprint as D2Pak Low Gate Impedance to Reduce Switching
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IRFBL3703
Juncti252-7105
24V 10A SMPS
IRFBL3703
DIODE 76A
ISD76A
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Untitled
Abstract: No abstract text available
Text: PD - 94971 IRF3703PbF SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l VDSS RDS on max ID 30V 2.8m! 210A Lead-Free Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated
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IRF3703PbF
O-220AB
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DIODE 76A
Abstract: No abstract text available
Text: PD - 94971 IRF3703PbF SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l VDSS RDS on max ID 30V 2.8mΩ 210A Lead-Free Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated
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IRF3703PbF
O-220AB
DIODE 76A
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94971 IRF3703PbF SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l VDSS RDS on max ID 30V 2.8mΩ 210A Lead-Free Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated
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IRF3703PbF
O-220AB
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IRF3703
Abstract: 24V 10A SMPS
Text: PD - 93918 IRF3703 SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing VDSS RDS on max ID 30V 2.8mΩ 210A Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated TO-220AB
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IRF3703
O-220AB
-55to
IRF3703
24V 10A SMPS
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IRFP3703
Abstract: No abstract text available
Text: PD - 93917A IRFP3703 SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing VDSS RDS on max ID 30V 0.0028Ω 210A Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated
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3917A
IRFP3703
O-247AC
IRFP3703
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Untitled
Abstract: No abstract text available
Text: PD - 93918 IRF3703 SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing VDSS RDS on max ID 30V 2.8mΩ 210A Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated TO-220AB
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IRF3703
O-220AB
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IRFP3703
Abstract: 5000d
Text: PD - 93917A IRFP3703 SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing VDSS RDS on max ID 30V 0.0028Ω 210A Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated
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3917A
IRFP3703
O-247AC
IRFP3703
5000d
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irf3703
Abstract: No abstract text available
Text: PD - 93918 IRF3703 SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing VDSS RDS on max ID 30V 2.8mΩ 210A Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated TO-220AB
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IRF3703
O-220AB
-55at
irf3703
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Untitled
Abstract: No abstract text available
Text: PD - 93917A IRFP3703 SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing VDSS RDS on max ID 30V 0.0028Ω 210A Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated
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3917A
IRFP3703
O-247AC
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PDF
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24V 10A SMPS
Abstract: IRFP3703
Text: PD - 93917 IRFP3703 SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing VDSS RDS on max ID 30V 0.0028Ω 210A Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated
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IRFP3703
O-247AC
24V 10A SMPS
IRFP3703
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7662
Abstract: No abstract text available
Text: STD35NF06L N-channel 60 V, 0.014 Ω, 35 A STripFET II Power MOSFET in a DPAK package Datasheet — production data Features Order code VDSS RDS on ID STD35NF06LT4 60V <0.017Ω 35A • Low threshold drive ■ Gate charge minimized TAB 3 1 Applications ■
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STD35NF06L
STD35NF06LT4
7662
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D35NF06L
Abstract: No abstract text available
Text: STD35NF06L N-channel 60 V, 0.014 Ω, 35 A STripFET II Power MOSFET in a DPAK package Datasheet — production data Features Order code VDSS RDS on ID STD35NF06LT4 60V <0.017Ω 35A • Low threshold drive ■ Gate charge minimized TAB 3 1 Applications ■
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STD35NF06L
STD35NF06LT4
D35NF06L
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Untitled
Abstract: No abstract text available
Text: TQP3M9037 Ultra Low Noise, High Linearity LNA Applications • • • • • Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / GSM General Purpose Wireless TDD or FDD systems 8 pin 2x2 mm DFN Package Product Features • • • • • • • • •
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TQP3M9037
TQP3M9036
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H-bridge Mosfet
Abstract: SPM4M28-10
Text: SENSITRON SEMICONDUCTOR SPM4M28-10 DATA SHEET, 685, REV. A Hermetic H-Bridge MOSFET Module With Gate Driver 100V, 28A Description: This power module is suited for high reliability switching applications such as motion control, UPS systems, induction heating, and DC/DC and DC/AC switch mode power supplies. Both the gate drivers
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SPM4M28-10
SPM4M28-10-1
Pin11
H-bridge Mosfet
SPM4M28-10
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