isd1700 design guide
Abstract: ISD1730 ISD1720 ISD1700 ISD1760 ISD17120 design guide ISD17240 isd1730 design guide SPIISD1700SPI ISD1790
Text: ISD 1700 系列数码语音电路 使用手册 （中文版） WWW.ATVOC.COM 中青世纪 http://www.atvoc.com 前 言 ISD1700 系列是华邦公司新推出的语音芯片，用来替代已经 停产的 ISD1400 系列及 ISD2500 系列芯片。ISD1700 系列不仅在
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ISD1700
ISD1400
ISD2500
ISD1700
ISD1720
ISD1730
ISD1740
ISD1750
isd1700 design guide
ISD1730
ISD1720
ISD1760
ISD17120 design guide
ISD17240
isd1730 design guide
SPIISD1700SPI
ISD1790
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STW3N170
Abstract: stfw3n170 N-channel MOSFET to-247
Text: STFW3N170, STW3N170 N-channel 1700 V, 8 Ω typ., 2.3 A, PowerMESH Power MOSFET in TO-3FP and TO-247 packages Datasheet − preliminary data Features VDSS RDS on max ID 1700 V 12 Ω 2.3 A Order codes STFW3N170 STW3N170 1 3 2 • Intrinsic capacitances and Qg minimized
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STFW3N170,
STW3N170
O-247
STFW3N170
O-247
STW3N170
N-channel MOSFET to-247
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100A 1000V mosfet
Abstract: No abstract text available
Text: APTMC170AM30CT1AG VDSS = 1700V RDSon = 30mΩ max @ Tj = 25°C ID = 106A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET
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APTMC170AM30CT1AG
100A 1000V mosfet
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Untitled
Abstract: No abstract text available
Text: APTMC170AM60CT1AG VDSS = 1700V RDSon = 60mΩ max @ Tj = 25°C ID = 53A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET
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APTMC170AM60CT1AG
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Untitled
Abstract: No abstract text available
Text: PRECISION TEMPERATURE CALIBRATOR WITH PRESSURE OPTION MODEL CLB CLB 3590 $ Model Shown Temperature Calibrator CLB $3590 Shown with optional CLB-PM-602-602 Pressure module ($1595) ߜ Calibration Lab in a Nutshell ߜ Rotatable Control Panel ߜ Reads Input and
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CLB-PM-602-602
24Volt,
Pt100
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LTC1619
Abstract: becker automotive ltc1680 LT1945 LTC1867 str 6753 data sheet str 6753 LTC1871 LTC3703 LT1786F
Text: 04.2006 オートモーティブ・エレクトロニクス・ソリューション ハイパフォーマンス・アナログ IC 昨今のオートモーティブ車載環境は高い入力電圧を受ける能力、広い動作温度範囲、効率の高
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ISO9001
QS9000
ISO14001
TS16949
ISO9001
HVAC5737
D-59387
D-70567
I-20156
S-191
LTC1619
becker automotive
ltc1680
LT1945
LTC1867
str 6753
data sheet str 6753
LTC1871
LTC3703
LT1786F
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Untitled
Abstract: No abstract text available
Text: STP12NK60Z STF12NK60Z N-CHANNEL 600V - 0.53Ω - 10A TO-220 / TO-220FP Zener-Protected SuperMESH MOSFET PRODUCT PREVIEW Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STP12NK60Z STF12NK60Z 600 V 600 V < 0.64 Ω < 0.64 Ω 10 A 10 A
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STP12NK60Z
STF12NK60Z
O-220
O-220FP
O-220
O-220FP
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smps 24v 10a
Abstract: DIODE 76A 24V 10A SMPS 035H IRFPE30 MJ6000
Text: PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l Lead-Free VDSS RDS on max ID 30V 0.0028Ω 210A Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated
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IRFP3703PbF
O-247AC
smps 24v 10a
DIODE 76A
24V 10A SMPS
035H
IRFPE30
MJ6000
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Untitled
Abstract: No abstract text available
Text: PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l Lead-Free VDSS RDS on max ID 30V 0.0028Ω 210A Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated
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IRFP3703PbF
O-247AC
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 9N100 Preliminary Power MOSFET 9A, 1000V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N100 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state
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9N100
9N100
O-247
QW-R502-735
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9N100
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 9N100 Preliminary Power MOSFET 9A, 1000V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N100 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state
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9N100
9N100
QW-R502-735
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD 9N100 Preliminary Power MOSFET 9 A, 1 0 0 0 V N -CH AN N EL POWER M OSFET ̈ DESCRI PT I ON The UTC 9N100 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state
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9N100
9N100
QW-R502-735
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24V 10A SMPS
Abstract: DIODE 76A IRFP3703PbF 035H IRFPE30 SMPS 24V irfp3703
Text: PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l Lead-Free VDSS RDS on max ID 30V 0.0028Ω 210A Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated
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IRFP3703PbF
O-247AC
24V 10A SMPS
DIODE 76A
IRFP3703PbF
035H
IRFPE30
SMPS 24V
irfp3703
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24V 10A SMPS
Abstract: IRFBL3703 DIODE 76A ISD76A
Text: PD - 93841 IRFBL3703 SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification in High Power High Frequency DC/DC Converters VDSS RDS on max ID 30V 0.0025Ω 260A Benefits >1mm lower profile than D2Pak Same footprint as D2Pak Low Gate Impedance to Reduce Switching
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IRFBL3703
Juncti252-7105
24V 10A SMPS
IRFBL3703
DIODE 76A
ISD76A
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STR 6753
Abstract: data sheet str 6753 RF3103 7805 12v to 5v 3a High Current Voltage Regulator mosfet 7805 TM 1628 driver display inverter STR 6753 LTC1964 7805 12v to 5v 1a 7805 IC
Text: Power Management & Wireless Solutions Power Management & Wireless Solutions ▼ Introduction Today’s handheld products require extremely small and low profile power management solutions. Consumers expect long battery life, so maximum efficiency is essential. And sensitive wireless receivers in close proximity to switching regulators pose potential
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I-20156
SE-164
STR 6753
data sheet str 6753
RF3103
7805 12v to 5v 3a
High Current Voltage Regulator mosfet 7805
TM 1628 driver display
inverter STR 6753
LTC1964
7805 12v to 5v 1a
7805 IC
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STD35NF06L
Abstract: No abstract text available
Text: STD35NF06L N-CHANNEL 60V - 0.014Ω - 35A DPAK STripFET II MOSFET PRELIMINARY DATA TYPE STD35NF06L • ■ ■ ■ ■ VDSS RDS on ID 60 V < 0.017 Ω 35 A TYPICAL RDS(on) = 0.014 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK
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STD35NF06L
STD35NF06L
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STD35NF06L
Abstract: No abstract text available
Text: STD35NF06L N-CHANNEL 60V - 0.014Ω - 35A DPAK STripFET II MOSFET PRELIMINARY DATA TYPE STD35NF06L • ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.017 Ω 35 A TYPICAL RDS(on) = 0.014 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK
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STD35NF06L
STD35NF06L
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d35nf06l
Abstract: STD35NF06L STD35NF06LT4 isd 1700 isd 1700 application D35NF
Text: STD35NF06L N-CHANNEL 60V - 0.014 Ω - 35A DPAK STripFET II POWER MOSFET TYPE STD35NF06L • ■ ■ ■ VDSS RDS on ID 60 V < 0.017 Ω 35 A TYPICAL RDS(on) = 0.014 Ω LOW THRESHOLD DRIVE GATE CHARGE MINIMIZED SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL
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STD35NF06L
O-252)
O-252
d35nf06l
STD35NF06L
STD35NF06LT4
isd 1700
isd 1700 application
D35NF
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Untitled
Abstract: No abstract text available
Text: IRFI540G Power MOSFET FEATURES D TO-220 FULLPAK • Isolated Package • High Voltage Isolation = 2.5 kVRMS t = 60 s; f = 60 Hz • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance
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IRFI540G
O-220
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LTC1619
Abstract: STR 6753 LT3406 data sheet str 6753 LT1172 boost converter 60v 7805 LDO LT1170 boost converter 12v dc LT3406B-2 LT3406B LTC2602
Text: 03.2005 Automotive Electronics Solutions High Performance Analog ICs Linear Technology Automotive Awards Today’s automotive environment demands high input voltage capability, wide operating temperature ranges and efficient thermal management. Consumer expectations and
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D-59387
D-73230
I-20156
SE-164
LTC1619
STR 6753
LT3406
data sheet str 6753
LT1172 boost converter 60v
7805 LDO
LT1170 boost converter 12v dc
LT3406B-2
LT3406B
LTC2602
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STP80NF03L-04
Abstract: airbag
Text: STP80NF03L-04 N-CHANNEL 30V - 0.0035 Ω - 80A TO-220 STripFET POWER MOSFET PRELIMINARY DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STP80NF03L-04 30 V <0.004 Ω 80 A TYPICAL RDS(on) = 0.0035Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE
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STP80NF03L-04
O-220
O-262)
O-263)
STP80NF03L-04
airbag
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Untitled
Abstract: No abstract text available
Text: PD - 94971 IRF3703PbF SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l VDSS RDS on max ID 30V 2.8mΩ 210A Lead-Free Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated
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IRF3703PbF
O-220AB
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P12NK60Z
Abstract: 0409 06 027 053 P12NK60 P12NK f12nk
Text: STP12NK60Z STF12NK60Z N-CHANNEL 600V - 0.53Ω - 10A TO-220 / TO-220FP Zener-Protected SuperMESH MOSFET PRODUCT PREVIEW Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STP12NK60Z STF12NK60Z 600 V 600 V < 0.64 Ω < 0.64 Ω 10 A 10 A 140 W
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STP12NK60Z
STF12NK60Z
O-220
O-220FP
O-220
O-220FP
P12NK60Z
0409 06 027 053
P12NK60
P12NK
f12nk
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irf440
Abstract: No abstract text available
Text: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t
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OCR Scan
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IRF9140
IRF9230
IRF9240
irf440
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