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    ISC TRANSISTOR 2SC4468 Search Results

    ISC TRANSISTOR 2SC4468 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ISC TRANSISTOR 2SC4468 Datasheets Context Search

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    2sa1695

    Abstract: 2SC4468 2SC4468 isc ISC transistor 2SC4468 isc 2SC4468 2sa1695 isc
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1695 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Min)@IC= - 5A ·Good Linearity of hFE ·Complement to Type 2SC4468 APPLICATIONS ·Designed for audio and general purpose applications


    Original     		2SA1695 2SC4468 2sa1695 2SC4468 2SC4468 isc ISC transistor 2SC4468 isc 2SC4468 2sa1695 isc PDF