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    Untitled

    Abstract: No abstract text available
    Text: I S66WVE2M16DALL 1.8V Core Async/Page PSRAM Overview The IS66WVE2M16DALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and


    Original     		S66WVE2M16DALL IS66WVE2M16DALL 32Mbit DQ0DQ15 2Mx16 IS66WVE2M16DALL-70BLI 48-ball PDF

    IS66WVE2M16DALL

    Abstract: 66WVE2M16DALL
    Text: IS66WVE2M16DALL 1.8V Core Async/Page PSRAM Overview The IS66WVE2M16DALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and


    Original     		IS66WVE2M16DALL IS66WVE2M16DALL 32Mbit DQ0DQ15 -40oC 2Mx16 IS66WVE2M16DALL-70BLI 48-ball 66WVE2M16DALL PDF

    IS43LR32640

    Abstract: is61wv5128 Product Selector Guide is42s86400 IS46R16160B IS25LD010 IS25LD025 IS25LQ IS62WV5128DALL BGA 168
    Text: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive, (ii) communications, (iii) digital consumer, and (iv) industrial/medical/military. These key markets all require high quality and reliability, extended temperature ranges, and long-term support. Our primary products are high speed and


    Original     		i1-44-42218428 IS43LR32640 is61wv5128 Product Selector Guide is42s86400 IS46R16160B IS25LD010 IS25LD025 IS25LQ IS62WV5128DALL BGA 168 PDF