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    Untitled

    Abstract: No abstract text available
    Text: IS61C6416AL IS62C6416AL ISSI IS64C6416AL IS65C6416AL 64K x 16 HIGH-SPEED CMOS STATIC RAM JANUARY 2005 FEATURES IS61C6416AL and IS64C6416AL • High-speed access time: 12 ns, 15ns • Low Active Power: 175 mW typical • Low Standby Power: 1 mW (typical)


    Original     		IS61C6416AL IS62C6416AL IS64C6416AL IS65C6416AL IS61C6416AL IS62C6416AL 44-pin PDF

    IS61C6416AL

    Abstract: 61C6416AL IS61C6416AL-12TLI IS64C6416AL IS62C6416AL IS65C6416AL 62c64
    Text: IS61C6416AL IS62C6416AL ISSI IS64C6416AL IS65C6416AL 64K x 16 HIGH-SPEED CMOS STATIC RAM JUNE 2005 FEATURES IS61C6416AL and IS64C6416AL • High-speed access time: 12 ns, 15ns • Low Active Power: 175 mW typical • Low Standby Power: 1 mW (typical)


    Original     		IS61C6416AL IS62C6416AL IS64C6416AL IS65C6416AL IS61C6416AL IS62C6416AL 44-pin 61C6416AL IS61C6416AL-12TLI IS64C6416AL IS65C6416AL 62c64 PDF

    IS61C6416AL-12TLI

    Abstract: IS61C6416AL IS62C6416AL IS64C6416AL IS65C6416AL IS62C6416AL-35K
    Text: IS61C6416AL IS62C6416AL ISSI IS64C6416AL IS65C6416AL 64K x 16 HIGH-SPEED CMOS STATIC RAM JANUARY 2005 FEATURES IS61C6416AL and IS64C6416AL • High-speed access time: 12 ns, 15ns • Low Active Power: 175 mW typical • Low Standby Power: 1 mW (typical)


    Original     		IS61C6416AL IS62C6416AL IS64C6416AL IS65C6416AL IS61C6416AL IS62C6416AL 44-pin IS61C6416AL-12TLI IS64C6416AL IS65C6416AL IS62C6416AL-35K PDF

    Untitled

    Abstract: No abstract text available
    Text: IS61C6416AL IS62C6416AL ISSI IS64C6416AL IS65C6416AL 64K x 16 HIGH-SPEED CMOS STATIC RAM JUNE 2005 FEATURES IS61C6416AL and IS64C6416AL • High-speed access time: 12 ns, 15ns • Low Active Power: 175 mW typical • Low Standby Power: 1 mW (typical)


    Original     		IS61C6416AL IS62C6416AL IS64C6416AL IS65C6416AL IS61C6416AL IS62C6416AL 44-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: IS61C6416AL IS62C6416AL ISSI IS64C6416AL IS65C6416AL 64K x 16 HIGH-SPEED CMOS STATIC RAM JUNE 2005 FEATURES IS61C6416AL and IS64C6416AL • High-speed access time: 12 ns, 15ns • Low Active Power: 175 mW typical • Low Standby Power: 1 mW (typical)


    Original     		IS61C6416AL IS62C6416AL IS64C6416AL IS65C6416AL IS61C6416AL IS62C6416AL 44-pin PDF

    IS61C1024

    Abstract: 102420M IS61C1024-15
    Text: ISSI IS61C1024 IS61C1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM august 1995 FEATURES DESCRIPTION • H ig h -s p e e d a c c e s s tim e : 12, 15, 2 0 , 2 5 ns • L o w a c tiv e p o w e r: 6 0 0 m W ty p ic a l The I S S I IS61C 1024 and IS61C 1024L are very high-speed,


    OCR Scan     		IS61C1024 IS61C1024L IS61C 1024L-12JR 1024L-12N IS61C1024L-12KRI 1024L-12M IS61C1024L-15JI IS61C1024L-15NI 102420M IS61C1024-15 PDF

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61C3216 32K x 16 HIGH-SPEED CMOS STATIC RAM ADV^ iL Nf P ^ TI0N FEATURES DESCRIPTION • High-speed access time: 10, 12, 15, and 20 ns The ISSI IS61C 3216 is a high-speed, 512K static RAM organized as 32,768 w ords by 16 bits. It is fabricated using


    OCR Scan     		IS61C3216 44-pin 400-mil IS61C 3216-20KI 3216-10T 3216-10K 3216-12T PDF

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61C 3216 32K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation — 450 mW typical operating — 250 fiW (typical) standby • TTL compatible interface levels • Single 5V ± 10% power supply


    OCR Scan     		44-pin 400-mil IS61C3216 co6-12TI IS61C3216-12KI IS61C3216-12T IS61C3216-12K PDF

    Untitled

    Abstract: No abstract text available
    Text: IS61C256AH IS61M256 32K x 8 ISSI HIGH-SPEED CMOS STATIC RAM DECEM BER 1997 FEATURES DESCRIPTION • High-speed access time: 10, 12,15, 20, 25 ns T h e lS S I IS61C 256A H and IS 61M 256 are very high-speed, low pow er, 3 2,768 w ord by 8-bit static RAM s. T hey are


    OCR Scan     		IS61C256AH IS61M256 IS61C stand61M256 IS61M256-10N IS61M256-10J 300-mil IS61M256-12N IS61M256-12J PDF

    Untitled

    Abstract: No abstract text available
    Text: IS61C 512 64K x 8 HIGH-SPEED CMOS STATIC RAM ISSI ju n e 1997 FEATURES DESCRIPTION • Pin compatible with 128K x 8 devices The IS S IIS61C512 is a very high-speed, low power, 65,536 word by 8-bit CMOS static RAMs. They are fabricated using IS S I's high-performance CMOS technology. This highly


    OCR Scan     		IS61C512 SR024-1 PDF

    IS61C64AH

    Abstract: No abstract text available
    Text: 8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION • H ig h -s p e e d a c c e s s tim e: 1 2 , 15, 2 0 , 2 5 ns • A u to m atic p o w e r-d o w n w h e n chip is d e s e le c te d • C M O S low p o w e r o p eratio n The IS S I IS61C 64AH is a very high-speed, low power,


    OCR Scan     		IS61C64AH 8192-word IS61C64AH-12N 300-mil IS61C64AH-12J IS61C64AH-15N IS61C64AH-15J PDF

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS 6 1 C 5 1 2 64K x 8 HIGH-SPEED CMOS STATIC RAM NOVEMBER 1996 FEATURES DESCRIPTION • Pin compatible with 128K x 8 devices The I S S I IS61C512 is a very high-speed, low power, 65,536 word by 8-bit C M O S static RAM s. T he y are fabricated using


    OCR Scan     		IS61C512 IS61C 512-20T 512-25J IS61C512-25N 512-25T IS61C512-35J PDF

    IS61C ISSI

    Abstract: No abstract text available
    Text: ISSI IS61C6416 6 4 K x 1 6 H IG H -S P E E D C M O S S T A T IC R A M A D V A .N. ^ ' ! Ì T 5 Ì l M„ e T ' 0 N FEATURES DESCRIPTION • High-speed access time: 10, 12, 15, and 20 ns T he ISSI IS 61C 6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 w ords by 16 bits. It is fabricated


    OCR Scan     		IS61C6416 44-pin 576-bit IS61C 6416-10T 6416-10K 6416-12T 6416-12K IS61C ISSI PDF

    C6416

    Abstract: IS61C6416 MAJJ IS61C ISSI
    Text: ISSI IS 6 1 C 6 4 1 6 64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation — 450 mW typical operating — 250 jjA/V (typical) standby • TTL compatible interface levels • Single 5V ± 10% power supply


    OCR Scan     		is61c6416 44-pin IS61C6416 576-bit sr005-1a C6416 MAJJ IS61C ISSI PDF

    Untitled

    Abstract: No abstract text available
    Text: IS61C512 m ¡ 64K x 8 HIGH-SPEED CMOS STATIC RAM june 1997 FEATURES DESCRIPTION • P in c o m p a tib le w ith 12 8 K x 8 d e v ic e s • H ig h -s p e e d a c c e s s tim e : 15, 2 0 , 2 5 , 3 5 ns • L o w a c tiv e p o w e r: 5 0 0 m W ty p ic a l


    OCR Scan     		IS61C512_ ISSIIS61C512 SR024-1G PDF

    Untitled

    Abstract: No abstract text available
    Text: I S 6 1 C WM 3 2 1 6 32K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation — 450 mW typical operating — 250 [l\N (typical) standby • TTL compatible interface levels • Single 5V ± 10% power supply


    OCR Scan     		44-pin 400-mil 3216-12TI IS61C 3216-12K 3216-15TI 3216-15K 3216-20TI PDF

    IS61C632

    Abstract: 5C-32
    Text: ISSI IS61C632 32K x 32 SYNCHRONOUS FAST STATIC RAM septeT berims FEATURES DESCRIPTION • Fast access time: - 8.5 ns-66 MHz;10 ns-60 MHz; 12 ns-50 MHz • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and


    OCR Scan     		Septemberi995 ns-66 ns-60 ns-50 100-Pin IS61C632 SR81995C32 IS61C632-8TQ IS61C632-8PQ 5C-32 PDF

    61c1024

    Abstract: IS61C1024
    Text: IS 61C1024 128K X 8 HIGH SPEED CMOS STATIC RAM PRELIMINARY SEPTEMBER 1990 DESCRIPTION FEATURES The ISSI IS 6 lC l0 2 4 is a high speed, low power, 131,072- word by 8- bit CMOS static RAM. It is fabricated using ISSI's high performance CMOS double metal technol­


    OCR Scan     		61C1024 power-400mW power-50 50jiW IS61C1024-S35W IS61C1024-L35W IS61C 1024-S45 IS61C1024-S55W 61c1024 IS61C1024 PDF

    IS61C64AH

    Abstract: TQGM404 s61c64
    Text: ISSI 8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION • The ISSI IS61C64AH is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable pro­ cess coupled with innovative circuit design techniques, yields


    OCR Scan     		IS61C64AH IS61C64AH 8192-word IS61C64AH-12N 300-mil IS61C64AH-12J IS61C64AH-15N IS61C64AH-15J TQGM404 s61c64 PDF

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61C6416 64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation — 450 mW typical operating — 250 fiW (typical) standby • TTL compatible interface levels • Single 5V ± 10% power supply


    OCR Scan     		IS61C6416 44-pin IS61C6416 576-bit 05-1A PDF

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61C64AH 8K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION FEATURES The ISSl IS61C64AH is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSl's high-performance CM O S technology. This highly reliable pro­ cess coupled with innovative circuit design techniques, yields


    OCR Scan     		IS61C64AH IS61C64AH 8192-word IS61C64AH-12N IS61C64AH-12J IS61C64AH-15N IS61C64AH-15J IS61C 64AH-20N IS61C64AH-20J PDF

    16kx1 static ram

    Abstract: 245l
    Text: IS 61C67_ 16K X 1 HIGH SPEED CMOS STATIC RAM PRELIMINARY OCTOBER 1990 FEATURES DESCRIPTION • High speed access time 15,20, 25ns Max. • Low active power- 200mW (Typical) • Low standby power-55mW (Typical) TTL standby -10|i.W (Typical) CMOS standby (L-version)


    OCR Scan     		61C67_ 16KX1 200mW power-55mW IS61C67 61C67 IS61C67-15N IS61C67-L15N IS61C67-20N IS61C67-L20N 16kx1 static ram 245l PDF

    IS61C1024

    Abstract: IS61C1024-20M
    Text: IS61C1024 IS61C1024L 128K x ISSI 8 HIGH-SPEED CMOS STATIC RAM Ja n u a r y 1996 FEATURES DESCRIPTION • High-speed access time: 12, 15, 20, 25 ns The IS S IIS61C 1024 and IS 61C 1024L are very high-speed, low power, 131,072-w ord by 8-bit CM O S static RAMs. T hey


    OCR Scan     		IS61C1024 IS61C1024L IS61C 1024L 072-w IS61CIS61C1024L-15JI IS61C1024L-15NI IS61C1024L-15KI IS61C1024L-15MI IS61C1024L-15TI IS61C1024-20M PDF