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    IC43R16320B

    Abstract: DDR333 DDR400 IC43R16320B-6TL
    Text: IS43R16320B IC43R16320B 512 Mb Double Data Rate Synchronous DRAM PRELIMINARY INFORMATION JUNE 2008 Features Specifications • Density: 512M bits • Organization ⎯ 8M words x 16 bits × 4 banks • Package: 66-pin plastic TSOP II ⎯ Lead-free (RoHS compliant)


    Original     		PDF IS43R16320B IC43R16320B 66-pin DDR400: DDR333, 400Mbps/333Mbps/266Mbps IC43R16320B DDR333 DDR400 IC43R16320B-6TL

    Untitled

    Abstract: No abstract text available
    Text: IS43R16320B IC43R16320B 512 Mb Double Data Rate Synchronous DRAM PRELIMINARY INFORMATION AUGUST 2007 Features Specifications • Density: 512M bits • Organization ⎯ 8M words x 16 bits × 4 banks • Package: 66-pin plastic TSOP II ⎯ Lead-free (RoHS compliant)


    Original     		PDF IS43R16320B IC43R16320B 66-pin DDR400: DDR333, 400Mbps/333Mbps/266Mbps cycles/64ms

    is25c64B

    Abstract: IC61C1024 IS25C128A IS42VM16800E IS42SM16800 IS24C16A Smart is62c1024al tsop2-54 4kx8 sram IS42S32800D
    Text: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are


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