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    IRL520S Price and Stock

    Vishay Siliconix IRL520S

    MOSFET N-CH 100V 9.2A D2PAK
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    Vishay Siliconix IRL520STRL

    MOSFET N-CH 100V 9.2A D2PAK
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    Vishay Intertechnologies IRL520S

    TRANS MOSFET N-CH 100V 9.2A 3PIN SMD-220 - Bulk (Alt: IRL520S)
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    Avnet Americas IRL520S Bulk 1,000
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    International Rectifier IRL520S

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    Bristol Electronics IRL520S 9
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    Quest Components IRL520S 139
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    IRL520S Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRL520S Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRL520S Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 9.2A D2PAK Original PDF
    IRL520S Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRL520S International Rectifier HEXFET Power MOSFET Scan PDF
    IRL520S International Rectifier HEXFET Power Mosfet Scan PDF
    IRL520S Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRL520STRL Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 9.2A D2PAK Original PDF
    IRL520STRL International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Scan PDF
    IRL520STRL Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRL520STRR Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 9.2A D2PAK Original PDF
    IRL520STRR International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Scan PDF
    IRL520STRR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRL520S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRL520S

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRL520S FEATURES BVDSS = 100 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.22Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 9.2 A ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature


    Original     		PDF IRL520S IRL520S

    Untitled

    Abstract: No abstract text available
    Text: IRL520S, SiHL520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 5 V 0.27 Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Single DESCRIPTION D D2PAK Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRL520S, SiHL520S O-263) 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRL520S, SiHL520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 5 V 0.27 Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Single DESCRIPTION D D2PAK Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRL520S, SiHL520S O-263) 11-Mar-11

    IRL520S

    Abstract: No abstract text available
    Text: IRL520S, SiHL520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 5 V 0.27 Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Single DESCRIPTION D D2PAK Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRL520S, SiHL520S O-263) 18-Jul-08 IRL520S

    Untitled

    Abstract: No abstract text available
    Text: IRL520S, SiHL520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 5 V 0.27 Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRL520S, SiHL520S SMD-220 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRL520S, SiHL520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 5 V 0.27 Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRL520S, SiHL520S SMD-220 18-Jul-08

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


    Original     		PDF OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    IRFBE30 equivalent

    Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
    Text: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566


    Original     		PDF May-97 Sep-95 Sep-94 IRFBE30 equivalent irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540

    IRF5905

    Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
    Text: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES


    Original     		PDF O-220/D2PAK IRF5905 MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB

    9137

    Abstract: surface mount IRFZ44N IRFK3D450 IRFK4H054 IRLI640G IRFBg30 equivalent hexfet power mosfets international rectifier IRFP260 IRC540 equivalent irf 3250
    Text: HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) Rθ A Max Thermal Resistance (°C/W) P Max.


    Original     		PDF OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRFK3DC50 IRFK3F150 O-240AA IRFK3F250 IRFK3F350 9137 surface mount IRFZ44N IRFK3D450 IRFK4H054 IRLI640G IRFBg30 equivalent hexfet power mosfets international rectifier IRFP260 IRC540 equivalent irf 3250

    IRF734

    Abstract: irf9640 REPLACEMENT GUIDE IRF3205 smd IRGTI165F06 irg4pc50fd *g4pc50w IRGKI115U06 IRGTI200F06 *gBC20f IRLIZ34
    Text: Electronic Switches Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566


    Original     		PDF FA38SA50LC OT-227 FA57SA50LC FB180SA10 IRC530 O-220 IRC540 IRF734 irf9640 REPLACEMENT GUIDE IRF3205 smd IRGTI165F06 irg4pc50fd *g4pc50w IRGKI115U06 IRGTI200F06 *gBC20f IRLIZ34

    DIODE S3V

    Abstract: DIODE S3V 08 IRL520S DIODE S3V 50
    Text: IRL520S A dvanced Power MOSFET FEATURES B V DSS — 1 0 0 V ♦ Avalanche Rugged Technology ^DS on = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 9 -2 A lD = ♦ Improved Gate Charge 0 .2 2 Î1 ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature


    OCR Scan     		PDF IRL520S DIODE S3V DIODE S3V 08 IRL520S DIODE S3V 50

    ls92

    Abstract: MOSFET 20V
    Text: IRL520S Advanced Power MOSFET FEATURES - 100 V ^ D S o n = 0.22Q B ^D S S ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD ♦ Improved Gate Charge ♦ Extended Safe Operating Area 9-2 A = D2-PAK ♦ 175°C Operating Temperature


    OCR Scan     		PDF IRL520S ls92 MOSFET 20V

    Untitled

    Abstract: No abstract text available
    Text: IRL520S A d van ced Power MOSFET FEATURES B V DSS - 100 V ^D S o n = 0 .2 2 a o II ♦ Lower Input Capacitance ho ♦ Rugged Gate Oxide Technology CD ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature


    OCR Scan     		PDF IRL520S

    Untitled

    Abstract: No abstract text available
    Text: 4B5545E 0015B44 DTE * I N R International 'k ?r Rectifier IR L 520S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • • PD-9.908 Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive


    OCR Scan     		PDF 4B5545E 0015B44 SMD-220 high10b. IRL520S MA55M52

    1RL520

    Abstract: 25CC 561C AN-994 IRL520 IRL520S SMD-220 smd diode marking U10
    Text: International Rectifier PD-9.561C IRL520 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V 175°C Operating Temperature Fast Switching Ease of Paralleling VDSS= 100V R DS(on) = 0.27Q


    OCR Scan     		PDF IRL520 O-220 IRL520S 1RL520 25CC 561C AN-994 SMD-220 smd diode marking U10

    90980

    Abstract: IRFI540G h6 SMD SMD BR 42
    Text: I n t e r n a t i o n a l R e c t if ie r mm HEXFET " Power MOSFETS V BR DSS Drairt-to-Source BreakdownVoltage (Vohs) Put Number RdS<wi) On-Stata Resistan« (3) (Ohms) IßContinuous Drain Current 25"C 100°C (Amps) (Amps) row ) PD«Tc=25"C Max Power Dissipation


    OCR Scan     		PDF IRLR014 IRLR024N IRLR110 IRLR120 O-220 IRFIZ14G IRFIZ24G IRFIZ34G IRFIZ44G 90980 IRFI540G h6 SMD SMD BR 42

    IRF9530S

    Abstract: smd H5 08 SMD BR 88
    Text: International lÜRectifier HEXFET Power MOSFETs Surface Mount S M D -2 2 0 These devices provide the highest power capacity and lowest possible on-resistance in a surface mount package. They can dissipate up to 2W in a typical surface mount application and are available in tape and reel.


    OCR Scan     		PDF SMD-220 F9630S IRF9640S IRF9530S smd H5 08 SMD BR 88

    FL110

    Abstract: LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc
    Text: H EXFET Other Products from IR SOT-89 N-Channel V BR q s s Drain-to-Source ROS(on) Part Breakdown On-State Number Voltage Resistance (Volt) (Ohms) IRFS1Z0 100 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps) 2.4 0.82 Iq Continuous RthJAMax P d @ T c = 25°C Case


    OCR Scan     		PDF OT-89 OT-89 IRCC044 IRCC140 IRCC240 IRCC244 IRCC340 IRCC440 IRCC054 FL110 LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc