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    IRHNJ67230 Price and Stock

    Infineon Technologies AG IRHNJ67230B

    Power MOSFET, N Channel, 200 V, 16 A, 130 Milliohms, SMD-0.5, 3 Pins, Surface Mount - Bulk (Alt: IRHNJ67230B)
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    Infineon Technologies AG IRHNJ67230SCV

    Transistor MOSFET N-Channel 200V 16A 3-Pin CSMD - Bulk (Alt: IRHNJ67230SCV)
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    Avnet Americas IRHNJ67230SCV Bulk 500
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    Infineon Technologies AG IRHNJ67230A

    Power MOSFET, N Channel, 200 V, 16 A, 130 Milliohms, SMD-0.5, 3 Pins, Surface Mount - Bulk (Alt: IRHNJ67230A)
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    International Rectifier IRHNJ67230SCS

    Electronic Component
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    ComSIT USA IRHNJ67230SCS 1
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    IRHNJ67230 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRHNJ67230 International Rectifier Original PDF

    IRHNJ67230 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRHNJ63230

    Abstract: IRHNJ67230
    Text: PD-96923B RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67230 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67230 IRHNJ63230 Radiation Level RDS(on) 100K Rads (Si) 0.13Ω 300K Rads (Si) 0.13Ω ID 16A 16A SMD-0.5 International Rectifier’s R6TM technology provides


    Original     		PD-96923B IRHNJ67230 IRHNJ63230 90MeV/ MIL-STD-750, MlL-STD-750, IRHNJ63230 IRHNJ67230 PDF

    JANSR2N7591U3

    Abstract: JANSr2N7591 IRHNJ67230 JANSF2N7591U3
    Text: PD-96923C IRHNJ67230 JANSR2N7591U3 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/746 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67230 100K Rads (Si) IRHNJ63230 300K Rads (Si) RDS(on) 0.13Ω 0.13Ω


    Original     		PD-96923C IRHNJ67230 IRHNJ63230 JANSR2N7591U3 MIL-PRF-19500/746 JANSF2N7591U3 90MeV/ MIL-STD-750, JANSr2N7591 JANSF2N7591U3 PDF

    JANSr2N7591

    Abstract: No abstract text available
    Text: PD-96923C IRHNJ67230 JANSR2N7591U3 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/746 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67230 100K Rads (Si) IRHNJ63230 300K Rads (Si) RDS(on) 0.13Ω 0.13Ω


    Original     		PD-96923C IRHNJ67230 JANSR2N7591U3 MIL-PRF-19500/746 IRHNJ67230 IRHNJ63230 JANSF2N7591U3 90MeV/ MIL-STD-750, JANSr2N7591 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-96923 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67230 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67230 IRHNJ63230 Radiation Level RDS(on) 100K Rads (Si) 0.13Ω 300K Rads (Si) 0.13Ω ID 16A 16A SMD-0.5 International Rectifier’s R6TM technology provides


    Original     		PD-96923 IRHNJ67230 IRHNJ63230 90MeV/ MIL-STD-750, MlL-STD-750, PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-96923A RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67230 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67230 IRHNJ63230 Radiation Level RDS(on) 100K Rads (Si) 0.13Ω 300K Rads (Si) 0.13Ω ID 16A 16A SMD-0.5 International Rectifier’s R6TM technology provides


    Original     		PD-96923A IRHNJ67230 IRHNJ63230 90MeV/ MIL-STD-750, MlL-STD-750, PDF

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 PDF

    2N7591

    Abstract: 2n7587 2N7587U3 2N7591U3 2N7593 2N7589 2N7593U3 2N7587U3C jans 2N7587U3 2N7591U3C
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 June 2010. MIL-PRF-19500/746A 19 March 2010 SUPERSEDING MIL-PRF-19500/746 15 May 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED


    Original     		MIL-PRF-19500/746A MIL-PRF-19500/746 2N7587U3, 2N7587U3C, 2N7589U3, 2N7589U3C, 2N7591U3, 2N7591U3C, 2N7593U3, 2N7593U3C, 2N7591 2n7587 2N7587U3 2N7591U3 2N7593 2N7589 2N7593U3 2N7587U3C jans 2N7587U3 2N7591U3C PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-97808 Radiation Hardended, Solid-State Relay with Buffered Inputs Product Summary RDHB710SE20A2SX Dual, 200V, 10A 5 Part Number Breakdown Voltage Current tr / tf Logic Drive Voltage RDHB710SE20A2SX 200V 10A Controlled 3.3V 8-PIN SURFACE MOUNT Description


    Original     		PD-97808 RDHB710SE20A2SX RDHB710SE20A2SX MIL-PRF-38534 PDF