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    International Rectifier IRGPC40KD2

    42 A, 600 V, N-CHANNEL IGBT, TO-247AC
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    Quest Components IRGPC40KD2 143
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    • 10 $78
    • 100 $66
    • 1000 $63
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    IRGPC40K Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRGPC40K International Rectifier IGBT Original PDF
    IRGPC40K Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRGPC40KD2 International Rectifier IGBT Original PDF
    IRGPC40KD2 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRGPC40K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    600V 25A Ultrafast Diode

    Abstract: Diode 188 IRGPC40KD2
    Text: PD - 9.1114 IRGPC40KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes


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    PDF IRGPC40KD2 O-247AC. O-247AD) O-247AC 600V 25A Ultrafast Diode Diode 188 IRGPC40KD2

    IRGPC40

    Abstract: IRGPC40K
    Text: PD - 9.1077 IRGPC40K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


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    PDF IRGPC40K IRGPC40 IRGPC40K

    500V N-Channel IGBT TO-3P

    Abstract: IRGPC40K IC25C
    Text: PD - 9.1077 IRGPC40K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


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    PDF IRGPC40K 500V N-Channel IGBT TO-3P IRGPC40K IC25C

    IRGPC40KD2

    Abstract: No abstract text available
    Text: PD - 9.1114 IRGPC40KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes


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    PDF IRGPC40KD2 O-247AC. O-247AD) O-247AC IRGPC40KD2

    IRGKI200F06

    Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
    Text: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U


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    PDF IRGB420U IRGP420U IRGB430U IRGP430U IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGKI200F06 IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


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    PDF OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103

    IRGCC40KE

    Abstract: IRGPC40K
    Text: Previous Datasheet Index Next Data Sheet PD-9.1427 TARGET IRGCC40KE IRGCC40KE IGBT Die in Wafer Form C 600 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage


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    PDF IRGCC40KE IRGCC40KE IRGPC40K IRGPC40K

    TRANSISTOR 9642

    Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


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    PDF T0247 T0220 IRG4BC20F IRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U TRANSISTOR 9642 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U

    IR2133

    Abstract: IR2233 ir2233j application IR2133 3 phase IR2235 application note ir2233j IR2133J IRG4PH40KD IR2135 MV-CA IR2135
    Text: Preliminary Data Sheet No. PD60107K IR2133 / IR2135 IR2233 / IR2235 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation · · · · · · Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune


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    PDF PD60107K IR2133 IR2135 IR2233 IR2235 0V/12V IR213rature IRG4PH50KD) IR2133J IRG4ZH71KD) ir2233j application IR2133 3 phase IR2235 application note ir2233j IRG4PH40KD IR2135 MV-CA IR2135

    IRGCC40KE

    Abstract: IRGPC40K
    Text: PD-9.1427 TARGET IRGCC40KE IRGCC40KE IGBT Die in Wafer Form C 600 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage


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    PDF IRGCC40KE IRGCC40KE IRGPC40K IRGPC40K

    application note ir2233j

    Abstract: IR2133J IR2235 ir2233j application IR2133 IR2133 application note
    Text: Data Sheet No. PD60107-Q IR2133/IR2135 J&S IR2233/IR2235 (J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune


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    PDF PD60107-Q IR2133/IR2135 IR2233/IR2235 0V/12V IR2233J IRG4PH50KD) IR2133J IRG4ZH71KD) 28-Lead MS-011AB) application note ir2233j IR2235 ir2233j application IR2133 IR2133 application note

    IRGKI200F06

    Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
    Text: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications


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    PDF O-220AB IRG4BC40S IRGBC20S IRGBC30S IRGBC40S O-247AC IRG4PC40S IRGPC30S IRGPC40S 10-30kHz) IRGKI200F06 IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06

    IR2133 application note

    Abstract: IR2133 application notes
    Text: Data Sheet No. PD60107 revX IR2133/IR2135 J&S & (PbF) IR2233/IR2235(J&S) & (PbF) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10V/12V to 20V DC and


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    PDF PD60107 IR2133/IR2135 IR2233/IR2235 0V/12V 28-Lead IR2133 application note IR2133 application notes

    9544 transistor

    Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


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    PDF T0247 T0220 assIRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U IRG4BC30UD 9544 transistor TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT

    IR2133 application note

    Abstract: mosfet 1200V 40A ax1500 IGBT mod igbt 500V 22A AX-7506-00 SCOP 200-002
    Text: Data Sheet No. PD60107 rev.V IR2133/IR2135 J&S & (PbF) IR2233/IR2235(J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10V/12V to 20V DC and


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    PDF PD60107 IR2133/IR2135 IR2233/IR2235 0V/12V IR2233J 44-Lead IR2235J 28-Lead IR2133 IR2133 application note mosfet 1200V 40A ax1500 IGBT mod igbt 500V 22A AX-7506-00 SCOP 200-002

    IR2132 APPLICATION NOTE

    Abstract: IR2130 APPLICATION NOTE ir2130 Mosfet driver IR2130 ir2130 application IR2130 3 phase irf840 power supply application IR2130 Drive circuit for IGBT using IR2130 IR2130S
    Text: Data Sheet No. PD60019J IR2130/IR2132 3-PHASE BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune · Gate drive supply range from 10 to 20V


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    PDF PD60019J IR2130/IR2132 IR2130) IR2132) IR2130/IR2132 MOS90245 IR2132 APPLICATION NOTE IR2130 APPLICATION NOTE ir2130 Mosfet driver IR2130 ir2130 application IR2130 3 phase irf840 power supply application IR2130 Drive circuit for IGBT using IR2130 IR2130S

    IR2133J

    Abstract: irg4p*50kd IR2133 IR2135 IR2233 IR2235
    Text: Back Preliminary Data Sheet No. PD60107J IR2133 / IR2135 IR2233 / IR2235 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage


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    PDF PD60107J IR2133 IR2135 IR2233 IR2235 0V/12V Descript90245 IR2133J irg4p*50kd IR2135 IR2235

    transistor C946

    Abstract: C948 c948 transistor C946 C947 c 948 BR c945 transistor diode c946 transistor c951 c947 transistor
    Text: International tor]Rectifier P D - 9.1114 IRGPC40KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • • • • Ie Short circuit rated -1 Ops @ 125°C, V q E = 15V Switching-loss rating includes all "tail" losses


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    PDF IRGPC40KD2 C-951 O-247AC C-952 transistor C946 C948 c948 transistor C946 C947 c 948 BR c945 transistor diode c946 transistor c951 c947 transistor

    transistor C946

    Abstract: No abstract text available
    Text: PD - 9.1114 International [^Rectifier IRGPC40KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • • • • V ces = 600V Short circuit rated -10ns @125°C, VGE= 15V Switching-loss rating includes all "tail" losses


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    PDF IRGPC40KD2 -10ns C-951 O-247AC C-952 transistor C946

    C886

    Abstract: transistor C886 S10008
    Text: bitemational S Rectifier P D -9.1077 IRGPC40K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ms @ 125°C, VGe = 15V • Switching-ioss rating includes all “tail" losses • Optimized for high operating frequency ewer 5kHz


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    PDF IRGPC40K C-889 O-247AC C-890 C886 transistor C886 S10008

    Untitled

    Abstract: No abstract text available
    Text: PD- 9.1077 International iör Rectifier IRGPC40K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, V q e = 1 5 V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


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    PDF IRGPC40K C-889 O-247AC C-890

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD60019J International 1QR Rectifier_ IR 2 1 3 0 /IR 2 1 3 2 PHASE BRIDGE DRIVER 3 Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune


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    PDF PD60019J IR2130/IR2132

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet No. PD60107J International IQ R Rectifier IR2133 / IR2135 IR2233 / IR2235 3-PHASE BRIDGE DRIVER Features Product Summary • F loa ting ch a n n e l d e sig n e d for b o o tstra p op era tion F ully o p e ra tio n a l to + 6 0 0 V o r+ 1 2 0 0 V


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    PDF PD60107J IR2133 IR2135 IR2233 IR2235 IR2133/IR2135/IR2233/IR2235 IR2233J IRG4PH30KD) IRG4PH40KD)

    IRGPH40KD2

    Abstract: IRGPH20K irgph30k
    Text: HIRectifier IGBTs International UltraFast IGBTs for Higher Frequency 10 -3 0 k H z Pow er Applications High Efficiency— Optim ized for Pow er Conversion Part Number V CES Collector to Emitter Voltage M a x V CE(on) Collector to Emitter Saturation Voltage


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    PDF IRGBC20K IRGBC30K IRGBC40K IRGPC20K IRGPC30K IRGPC40K IRGPC50K O-220AB IRGBC20KD IRGNIN050K06 IRGPH40KD2 IRGPH20K irgph30k