IRGPC30MD2
Abstract: No abstract text available
Text: PD - 9.1082 IRGPC30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated Fast CoPack IGBT C • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes
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IRGPC30MD2
10kHz)
O-247AC.
O-247AD)
O-247AC
IRGPC30MD2
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IRGPC30M
Abstract: No abstract text available
Text: PD - 9.1076 IRGPC30M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency
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IRGPC30M
10kHz)
IRGPC30M
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Untitled
Abstract: No abstract text available
Text: International ^Rectifier P D - 9.1082 IRGPC30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short Circuit Rated Fast CoPack IGBT V ces = 600V Short circuit rated -10ps @125°C, VGE = 15V Switching-loss rating includes all "tail” losses
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OCR Scan
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IRGPC30MD2
-10ps
10kHz)
C-395
DQ2Q165
O-247AC
C-396
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Untitled
Abstract: No abstract text available
Text: International BgllRectifier P D - 9.1076 IRGPC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V ge = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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OCR Scan
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IRGPC30M
10kHz)
554S2
0G2011S
O-247AC
4flSS45E
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transistor c324
Abstract: No abstract text available
Text: International [rc Rectifier P D - 9.1076 IRGPC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 1 0ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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OCR Scan
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10kHz)
IRGPC30M
O-247AC
C-326
transistor c324
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transistor c323
Abstract: transistor c324 transistor c323 r transistor c322 c323 transistor same C323 transistor transistor c322 7 IRGPC30M C326 c323 tsc
Text: Previous Datasheet Index Next Data Sheet PD - 9.1076 IRGPC30M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGPC30M
10kHz)
high-vo00
O-247AC
C-326
transistor c323
transistor c324
transistor c323 r
transistor c322
c323 transistor same
C323 transistor
transistor c322 7
IRGPC30M
C326
c323 tsc
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IRGPC30M
Abstract: No abstract text available
Text: PD - 9.1076 IRGPC30M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency
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IRGPC30M
10kHz)
IRGPC30M
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IRGPC30MD2
Abstract: No abstract text available
Text: PD - 9.1082 IRGPC30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated Fast CoPack IGBT C • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes
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IRGPC30MD2
10kHz)
O-247AC.
O-247AD)
O-247AC
IRGPC30MD2
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C394 transistor
Abstract: cr-e5
Text: International [ior]Rectifier P D - 9.1082 IRGPC30MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 600V • Short circuit rated -10ps @125°C, V qe = 15V • Switching-loss rating includes all "tail' losses
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OCR Scan
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-10ps
10kHz)
IRGPC30MD2
O-247AC
C-396
C394 transistor
cr-e5
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C394 transistor
Abstract: iC C393 IRGPC30MD2 C389 GE c394 transistor C393
Text: Previous Datasheet Index Next Data Sheet PD - 9.1082 IRGPC30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGPC30MD2
10kHz)
O-247AC
C-396
C394 transistor
iC C393
IRGPC30MD2
C389
GE c394
transistor C393
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IRGKI200F06
Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
Text: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U
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IRGB420U
IRGP420U
IRGB430U
IRGP430U
IRGBC20K
IRGPC20K
IRGBC20K-S
IRGBC20M
IRGBC20M-S
IRGPC20M
IRGKI200F06
IRGNIN150M06
IRGKI120F06
IRGDDN600M06
IRGKI115U06
IRGBC20FD2
IRGTIN025M12
IRGTI140U06
IRGPC50U
IRGKI165F06
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IRGKI165F06
Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)
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OT-23)
IRLML2402*
IRLML2803
IRLML5103
IRLML6302*
IRGKI165F06
IRGDDN600M06
IRGDDN600K06
IRF7311
IRGNIN075
IRFK6H054
IRF7601
IRLI2203N
IRLML2803
IRLML5103
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TRANSISTOR 9642
Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics
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T0247
T0220
IRG4BC20F
IRG4BC20FD
IRG4BC30F
IRG4BC30FD
IRG4BC40F
IRG4BC20U
IRG4BC20UD
IRG4BC30U
TRANSISTOR 9642
9544 transistor
T0247 package
what is fast IGBT transistor
IRG4PC50U
Equivalent transistors for IRG4PC50U
IRG4BC20FD 600V 16 TO220
IRGPC40U
irg4ph50ud
IRGB440U
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IRGKI200F06
Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
Text: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications
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O-220AB
IRG4BC40S
IRGBC20S
IRGBC30S
IRGBC40S
O-247AC
IRG4PC40S
IRGPC30S
IRGPC40S
10-30kHz)
IRGKI200F06
IRGNIN150M06
IRGTI165F06
IRGBC20FD2
IRGKI115U06
irgti140u06
IRG4PC40S
IRGPH40FD2
IRG4BC30UD
IRGNI115U06
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D220
Abstract: No abstract text available
Text: International IGBTs lioR Bectifier Fast IGBTs for Medium Frequency 3-10 kHz range Power Applications High Efficiency — Optimized for Power Conversion FAST (cont. •c Part Number Continuous Collector Current V CES Collector to Emitter Voltage M ax VcE(on)
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OCR Scan
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IRGBF20F
IRGBF30F
IRGPF30F
IRGPF40F
IRGPF50F
IRGPH40F
IRGPH50F
O-220AB
IRGPH40FD2
IRGPH50FD2
D220
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OZ527
Abstract: IRG4PC30K IRGPC30K IRGPC30M
Text: PD - 9.1588 IRG4PC30K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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IRG4PC30K
OZ527
IRG4PC30K
IRGPC30K
IRGPC30M
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Untitled
Abstract: No abstract text available
Text: IGBT ТРАНЗИСТОРЫ Наименование HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3 HGTP3N60B3 HGTP7N60B3 HGTP7N60B3D IRG4BC20UD IRG4BC30F IRG4BC30U IRG4BC30UD
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HGTD3N60B3S
HGTG12N60B3
HGTG12N60B3D
HGTG12N60C3D
HGTG30N60B3
HGTP12N60B3
HGTP12N60B3D
HGTP14N36G3VL
HGTP14N40F3VL
HGTP20N60B3
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irf 44 n
Abstract: 035H IRFPE30 IRGPC30K IRGPC30M
Text: PD - 94921 IRG4PC30KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V Combines low conduction losses with high
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IRG4PC30KPbF
O-247AC
IRFPE30
irf 44 n
035H
IRFPE30
IRGPC30K
IRGPC30M
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035H
Abstract: IRFPE30 IRGPC30K IRGPC30M IRG4PC30KPBF
Text: PD - 94921 IRG4PC30KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V Combines low conduction losses with high
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IRG4PC30KPbF
O-247AC
IRFPE30
035H
IRFPE30
IRGPC30K
IRGPC30M
IRG4PC30KPBF
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IRFBE30 equivalent
Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
Text: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566
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May-97
Sep-95
Sep-94
IRFBE30 equivalent
irf9640 REPLACEMENT GUIDE
IRGKI200F06
IRGP440U replacement
IRF3205 smd
IRGBC20FD2
IRFK3D450
IRFBg30 equivalent
IRGNIN150M06
irc540
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IRG4PC30K
Abstract: IRGPC30K IRGPC30M
Text: PD - 91588A IRG4PC30K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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1588A
IRG4PC30K
IRG4PC30K
IRGPC30K
IRGPC30M
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IRGDDN600M06
Abstract: IRGPH20K IRGPC20F IRGPF30F irgpc50md2 *gBC20f IRGPC50U
Text: Insulated Gate BiPolar Transistors — IGBTs and IGBT / UltraFasf Diodes — CoPack Discrete and Module Types 1. 1 0- - 0 Q i w r r Chopper Low Side Switch Single switch witn uiooej Single Switch (without Diode o Current
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OCR Scan
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IRGBF20F
IRGPF20F
IRGB420U
IRGP420U
IRGBC20K
RGPC20K
IRGBC20M
IRGPC20M
IRGBC20U
IRGPC20U
IRGDDN600M06
IRGPH20K
IRGPC20F
IRGPF30F
irgpc50md2
*gBC20f
IRGPC50U
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TO-247AC Package
Abstract: IRG4PC30K IRGPC30K IRGPC30M
Text: PD - 91588A IRG4PC30K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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1588A
IRG4PC30K
T252-7105
TO-247AC Package
IRG4PC30K
IRGPC30K
IRGPC30M
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94921 IRG4PC30KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V Combines low conduction losses with high
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Original
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IRG4PC30KPbF
O-247AC
IRFPE30
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